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Power Transistors
2SD1254
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB931
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
s Features
q Low collector to emitter saturation voltage VCE(sat)
q Satisfactory linearity of foward current transfer ratio hFE
q Large collector current IC
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
130
80
7
6
3
30
1.3
Unit
V
V
V
A
A
W
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
s Electrical Characteristics (TC=25˚C)
˚C
˚C
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
ICBO
IEBO
VCB = 100V, IE = 0
VEB = 5V, IC = 0
10 µA
50 µA
Collector to emitter voltage
VCEO
IC = 10mA, IB = 0
80
V
Forward current transfer ratio
hFE1
hFE2*
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 0.5A
45
60 260
Collector to emitter saturation voltage VCE(sat)
IC = 2A, IB = 0.1A
0.5 V
Base to emitter saturation voltage VBE(sat)
IC = 2A, IB = 0.1A
1.5 V
Transition frequency
fT VCE = 10V, IC = 0.5A, f = 10MHz
30 MHz
Turn-on time
Storage time
Fall time
ton IC = 0.5A, IB1 = 50mA, IB2 = –50mA,
tstg
tf
VCC = 50V
0.5
2.5
0.15
µs
µs
µs
*hFE2 Rank classification
Rank
R
Q
hFE2 60 to 120 90 to 180
P
130 to 260
1
Free Datasheet http://www.Datasheet4U.com

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Power Transistors
50
40
(1)
30
PC — Ta
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(PC=1.3W)
20
10
(2)
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=20
30
10
3
25˚C
1
0.3
TC=–25˚C
100˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
10000
3000
1000
Cob — VCB
IE=0
f=1MHz
TC=25˚C
300
100
30
10
3
1
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
IC — VCE
5
TC=25˚C
IB=100mA
4
50mA
3
30mA
25mA
2
20mA
10mA
1
5mA
2mA
0 1mA
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD1254
VCE(sat) — IC
100
IC/IB=20
30
10
3
1 TC=100˚C
25˚C
0.3
–25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
10000
3000
1000
hFE — IC
VCE=2V
300 TC=100˚C
25˚C
100
–25˚C
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
10000
3000
1000
fT — IC
VCE=10V
f=10MHz
TC=25˚C
300
100
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
ton, tstg, tf — IC
100
Pulsed tw=1ms
Duty cycle=1%
30 IC/IB=10(IB1=–IB2)
VCC=50V
10 TC=25˚C
3
1 tstg
ton
0.3 tf
0.1
0.03
0.01
0
0.4 0.8 1.2 1.6 2.0
Collector current IC (A)
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10 ICP
IC
3
10ms
1 1ms
t=0.5ms
0.3 300ms
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2
Free Datasheet http://www.Datasheet4U.com

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Power Transistors
103
102
10
Rth(t) — t
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
(2)
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
Time t (s)
102 103
104
2SD1254
3
Free Datasheet http://www.Datasheet4U.com