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MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS C6
600V CoolMOS™ C6 Power Transistor
IPx60R190C6
Data Sheet
Rev. 2.1, 2010-02-09
Final
Industrial & Multimarket
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600V CoolMOS™ C6 Power Transistor
1 Description
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle
and pioneered by Infineon Technologies. CoolMOS™ C6 series
combines the experience of the leading SJ MOSFET supplier with
high class innovation. The offered devices provide all benefits of a
fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching
applications even more efficient, more compact, lighter, and cooler.
Features
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• JEDEC1) qualified, Pb-free plating, Halogen free
Applications
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom, UPS and Solar.
Please note: For MOSFET paralleling the use of ferrite beads on
the gate or separate totem poles is generally recommended.
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
Qg,typ
ID,pulse
Eoss @ 400V
Body diode di/dt
650
0.19
63
59
5.2
500
V
nC
A
µJ
A/µs
IPA60R190C6, IPB60R190C6
IPI60R190C6, IPP60R190C6
IPW60R190C6
drain
pin 2
gate
pin 1
source
pin 3
Type / Ordering Code
IPW60R190C6
IPB60R190C6
IPI60R190C6
IPP60R190C6
IPA60R190C6
Package
PG-TO247
PG-TO263
PG-TO262
PG-TO220
PG-TO220 FullPAK
Marking
6R190C6
Related Links
IFX C6 Product Brief
IFX C6 Portfolio
IFX CoolMOS Webpage
IFX Design tools
1) J-STD20 and JESD22
Final Data Sheet
2
Rev. 2.1, 2010-02-09
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600V CoolMOS™ C6 Power Transistor
IPx60R190C6
Table of Contents
Table of Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Final Data Sheet
3 Rev. 2.1, 2010-02-09
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600V CoolMOS™ C6 Power Transistor
IPx60R190C6
Maximum ratings
2 Maximum ratings
at Tj = 25 °C, unless otherwise specified.
Table 2 Maximum ratings
Parameter
Symbol
Continuous drain current1)
ID
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
ID,pulse
EAS
EAR
IAR
dv/dt
VGS
Power dissipation for
TO-220, TO-247, TO-262, TO-263
Power dissipation for
TO-220 FullPAK
Operating and storage temperature
Mounting torque
TO-220, TO-247
Mounting torque
TO-220 FullPAK
Continuous diode forward current
Diode pulse current2)
Reverse diode dv/dt3)
Ptot
Ptot
Tj,Tstg
IS
IS,pulse
dv/dt
Min.
-
-
-
Values
Typ. Max.
- 20.2
12.8
- 59
- 418
--
--
--
-20 -
-30
--
0.63
3.4
50
20
30
151
- - 34
-55 -
--
150
60
50
- - 17.5
- - 59
- - 15
Maximum diode commutation
speed3)
dif/dt
1) Limited by Tj,max. Maximum duty cycle D=0.75
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical RG
500
Unit Note / Test Condition
A
A
mJ
A
V/ns
V
W
TC= 25 °C
TC= 100°C
TC=25 °C
ID=3.4 A,VDD=50 V
(see table 21)
ID=3.4 A,VDD=50 V
VDS=0...480 V
static
AC (f>1 Hz)
TC=25 °C
°C
Ncm M3 and M3.5 screws
M2.5 screws
A
A
V/ns
A/µs
TC=25 °C
TC=25 °C
VDS=0...400 V,ISD ID,
Tj=25 °C
(see table 22)
Final Data Sheet
4 Rev. 2.1, 2010-02-09
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3 Thermal characteristics
600V CoolMOS™ C6 Power Transistor
IPx60R190C6
Thermal characteristics
Table 3 Thermal characteristics TO-220 (IPP60R190C6),TO-247 (IPW60R190C6),TO-262 (IPI60R190C6)
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit Note /
Test Condition
Thermal resistance, junction - case RthJC
-
-
0.83 °C/W
Thermal resistance, junction -
RthJA
-
-
62
ambient
leaded
Soldering temperature,
Tsold
-
-
260 °C 1.6 mm (0.063 in.)
wavesoldering only allowed at
from case for 10 s
leads
Table 4 Thermal characteristics TO-220 FullPAK (IPA60R190C6)
Parameter
Symbol
Values
Min.
Typ.
Max.
Thermal resistance, junction - case RthJC
-
-
3.7
Thermal resistance, junction -
RthJA
-
-
80
ambient
Soldering temperature,
Tsold
-
-
260
wavesoldering only allowed at
leads
Unit Note /
Test Condition
°C/W
leaded
°C 1.6 mm (0.063 in.)
from case for 10 s
Table 5 Thermal characteristics TO-263 (IPB60R190C6)
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit Note /
Test Condition
Thermal resistance, junction - case RthJC
-
-
0.83 °C/W
Thermal resistance, junction -
RthJA
-
-
62
ambient
SMD version, device
on PCB, minimal
footprint
35 SMD version, device
on PCB, 6cm2 cooling
area1)
Soldering temperature,
Tsold
-
-
260 °C reflow MSL1
wave- & reflow soldering allowed
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm2 copper area (thickness 70µm) for drain connection.
PCB is vertical without air stream cooling.
Final Data Sheet
5 Rev. 2.1, 2010-02-09
Free Datasheet http://www.Datasheet4U.com