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100 V, 28 A, 20.4 mΩ Low RDS(ON)
N ch Trench Power MOSFET
DKI10299
Features
V(BR)DSS --------------------------------100 V (ID = 100 µA)
ID ---------------------------------------------------------- 28 A
RDS(ON) -------- 30.0 mΩ max. (VGS = 10 V, ID = 14.2 A)
Qg------16.9 nC (VGS = 4.5 V, VDS = 50 V, ID = 17.1 A)
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive
100 % UIL Tested
RoHS Compliant
Package
TO-252
(4)
D
(1) (2) (3)
GDS
(3) (2) (1)
SDG
Applications
DC-DC converters
Synchronous Rectification
Power Supplies
Equivalent circuit
D(2)(4)
G(1)
S(3)
Not to scale
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Drain to Source Voltage
VDS
Gate to Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
IDM
IS
ISM
Single Pulse Avalanche Energy
EAS
Avalanche Current
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
IAS
PD
TJ
TSTG
Test conditions
TC = 25 °C
PW 100µs
Duty cycle 1 %
PW 100µs
Duty cycle 1 %
VDD = 50 V, L = 1 mH,
IAS = 9.4 A, unclamped,
RG = 4.7 Ω
Refer to Figure 1
TC = 25 °C
Rating
100
± 20
28
57
28
57
89
16.7
47
150
55 to 150
Unit
V
V
A
A
A
A
mJ
A
W
°C
°C
DKI10299-DS Rev.1.5
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
http://www.sanken-ele.co.jp
1

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DKI10299
Thermal Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Test Conditions
Thermal Resistance
(Junction to Case)
RθJC
Thermal Resistance
(Junction to Ambient)
RθJA Mounted on PCB*
* 1 inch square 2 oz copper pad on 1.5 × 1.5 inch PCB.
Min. Typ. Max. Unit
− − 2.7 °C/W
− − 35.7 °C/W
Electrical Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Drain to Source Breakdown
Voltage
V(BR)DSS
Drain to Source Leakage Current
IDSS
Gate to Source Leakage Current
IGSS
Gate Threshold Voltage
VGS(th)
Static Drain to Source
On-Resistance
RDS(ON)
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (VGS = 10 V)
Total Gate Charge (VGS = 4.5 V)
Gate to Source Charge
Gate to Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source to Drain Diode Forward
Voltage
Source to Drain Diode Reverse
Recovery Time
Source to Drain Diode Reverse
Recovery Charge
RG
Ciss
Coss
Crss
Qg1
Qg2
Qgs
Qgd
td(on)
tr
td(off)
tf
VSD
trr
Qrr
Test Conditions
ID = 100 μA, VGS = 0 V
VDS = 100 V, VGS = 0 V
VGS = ± 20 V
VDS = VGS, ID = 650 µA
ID = 14.2 A, VGS = 10 V
ID = 7.1 A, VGS = 4.5 V
f = 1 MHz
VDS = 25 V
VGS = 0 V
f = 1 MHz
VDS = 50 V
ID = 17.1 A
VDD = 50 V
ID = 17.1 A
VGS = 10 V, RG = 4.7 Ω
Refer to Figure 2
IS = 14.2 A, VGS = 0 V
IF = 17.1 A
di/dt = 100 A/µs
Refer to Figure 3
Min. Typ. Max. Unit
100 − − V
− − 100 µA
− − ± 100 nA
1.0 2.0 2.5
V
20.4 30.0
21.8 31.4
1.5
Ω
2540
195
pF
88
36.5
16.9
6.4
nC
4.8
4.7
4.4
21.9
ns
9.4
0.9 1.5 V
44.6
ns
82.5
nC
DKI10299-DS Rev.1.5
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
2

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DKI10299
Test Circuits and Waveforms
VGS
RG
0V
L
ID
VDS
E AS
1
2
L IAS2
V(BR)DSS
V(BR)DSS VDD
VDD
VDS
ID
IAS
(a) Test Circuit
Figure 1 Unclamped Inductive Switching
(b) Waveform
V(BR)DSS
VDD
RL
VGS
RG
0V
P.W. = 10 μs
Duty cycle 1 %
VDS
VDD
VGS
VDS
td(on) tr
ton
(a) Test Circuit
Figure 2 Switching Time
td(off) tf
toff
(b) Waveform
90%
10%
90%
10%
VGS
0V
D.U.T.
RG
IF L
VDD
IF
0V
di/dt
trr
IRM × 90 %
IRM
(a) Test Circuit
Figure 3 Diode Reverse Recovery Time
(b) Waveform
DKI10299-DS Rev.1.5
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
3

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DKI10299
RDS(ON)-ID characteristics (typical)
VGS=10V
60
50
Tc = 125
40
75
30
25
20
10
0
0 10 20 30 40 50 60
ID (A)
VDS-VGS characteristics (typical)
Tc=25
0.8
0.7
0.6
0.5
0.4
0.3
ID=14.2A
0.2
ID=8.6A
0.1 ID=7.1A
0.0
0
5 10
VGS (V)
15
RDS(ON)-ID characteristics (typical)
VGS=4.5V
70
60
50
Tc = 125
40
75
30
25
20
10
0
0 10 20 30 40 50 60
ID (A)
IDR-VSD characteristics (typical)
Tc=25
60
50
40
30
20
10
0
0
VGS=10V
VGS=4.5V
3V
0V
0.5 1
VSD (V)
1.5
ID-VGS characteristics (typical)
VDS=5V
60
50
40
30
20 Tc =125
75
10 25
0
012345
VGS (V)
IDR-VSD characteristics (typical)
VDS=0V
60
50
40
30 Tc =125
20 75
25
10
0
0 0.5 1 1.5
VSD (V)
Capacitance-VDS characteristics (typical)
10000
Ciss
1000
100
Ta=25
VGS=0V
f =1MHz
10
0 10
Coss
Crss
20 30
VDS (V)
40
50
RDS(ON)-Tc characteristics (typical)
50
40
30
20
10 ID=14.2A
VGS=10V
0
25 50 75 100 125 150
Tc ()
VGS - Qg characteristics (typical)
15
10
5
Tc=25
VDS=50V
ID=17.1A
0
0 10 20 30 40
Qg (nC)
RDS(ON)-Tc characteristics (typical)
50
40
30
20
10
ID=7.1A
VGS=4.5V
0
25 50 75 100 125 150
Tc ()
DKI10299-DS Rev.1.5
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
Vth-Tc characteristics (typical)
3
2
1
ID=650uA
VGS=VDS
0
25 50 75 100 125 150
Tc ()
BVDSS-Tc characteristics (typical)
130
125
120
115
110
ID=1mA
VGS=0V
105
100
25 50 75 100 125 150
Tc ()
4

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DKI10299
50
40
30
20
10
0
0
PD-Ta Derating
50 100
Ta ()
150
SAFE OPERATING AREA
1000
ID(pulse) MAX
100
PT=100μs
10
PT=1m s
1
1 shot
Tc=25
0.1
0.1
1
10
VDS (V)
100
1.E+01
TRANSIENT THERMAL RESISTANCE - PULSE WIDTH
1.E+00
1.E-01
1.E-02
1.E-04
1.E-03
1.E-02
1.E-01
P.T. (sec)
1.E+00
Tc = 25
1shot
VDS < 10V
1.E+01
1.E+02
DKI10299-DS Rev.1.5
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
5