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55NF06
®
55NF06
Pb
Pb Free Plating Product
N-CHANNEL POWER MOSFET TRANSISTOR
50 AMPERE 60 VOLT
N-CHANNEL POWER MOSFET
„ DESCRIPTION
ThinkiSemi 50N06 is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
threshold voltages of 4 volt.
It is mainly suitable electronic ballast, and low power switching
mode power appliances.
„ FEATURES
* RDS(ON) = 23mȍ@VGS = 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
„ SYMBOL
U55NF06 TO-251/IPAK
P55NF06 TO-220
F55NF06 TO-220F
D55NF06 TO-252/DPAK
„ APPLICATION
Auotmobile Convert System
Networking DC-DC Power System
Power Supply etc..
12 3
TO-251/IPAK
12 3 TO-220/TO-220F
1 2 3 TO-252/DPAK
1.Gate
2.Drain
„ ABSOLUTE MAXIMUM RATINGS
3.Source
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60 V
Gate-Source Voltage
VGSS
±20 V
Continuous Drain Current
TC = 25°C
TC = 100°C
ID
50 A
35 A
Pulsed Drain Current (Note 2)
IDM 200 A
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
EAR
480 mJ
13 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
7 V/ns
TO-220
120 W
Power Dissipation (TC=25°C)
TO-251
PD
90 W
TO-252
136 W
Junction Temperature
TJ
+150
°C
Operation and Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Rev.02
2. Repetitive Rating: Pulse width limited by TJ
3. L=0.38mH, IAS=50A, VDD=25V, RG=20ȍ, Starting TJ=25°C
4. ISD”50A, di/dt”300A/ȝs, VDD”BVDSS, Starting TJ=25°C
Page 1/6
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
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55NF06
®
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case 
TO-220
TO-251
TO-252
TO-220
TO-251
TO-252
SYMBOL
șJA
șJC
RATING
62
62
100
1.24
1.28
1.1
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
„ ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current Forward
Reverse
Breakdown Voltage Temperature
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
TEST CONDITIONS
BVDSS VGS = 0 V, ID = 250 ȝA
IDSS VDS = 60 V, VGS = 0 V
IGSS
VGS = 20V, VDS = 0 V
VGS = -20V, VDS = 0 V
ϦBVDSS/ƸTJ
ID = 250 ȝA,
Referenced to 25°C
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 ȝA
VGS = 10 V, ID = 25 A
CISS
COSS
CRSS
VGS = 0 V, VDS = 25 V
f = 1MHz
MIN TYP MAX UNIT
60 V
10 ȝA
100 nA
-100 nA
0.07 V/°C
2.0 4.0 V
18 23 mȍ
900 1220
430 550
80 100
pF
pF
pF
„ ELECTRICAL CHARACTERISTICS(Cont.)
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
tD(ON)
tR
tD(OFF)
VDD = 30V, ID =25 A,
RG = 50ȍ (Note 1, 2)
Turn-Off Fall Time
tF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
VDS = 48V, VGS = 10 V
ID = 50A (Note 1, 2)
DRAIN-SOURCE DIODE CHARACTERISTICS ANDʳMAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD IS = 50A, VGS = 0 V
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
tRR IS = 50A, VGS = 0 V
Reverse Recovery Charge
QRR dIF / dt = 100 A/ȝs
Notes: 1. Pulse Test: Pulse Width”300ȝs, Duty Cycle”2%
2. Essentially independent of operating temperature
40 60
100 200
90 180
80 160
30 40
9.6
10
ns
ns
ns
ns
nC
nC
nC
1.5 V
50 A
200 A
54 ns
81 ȝC
Rev.02
© 2006 Thinki Semiconductor Co.,Ltd.
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55NF06
„ TEST CIRCUITS AND WAVEFORMS
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
D.U.T.
+
-
+
VDS
-
L
RG
Same Type
VGS as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D=
Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
®
Body Diode
Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms
Rev.02
© 2006 Thinki Semiconductor Co.,Ltd.
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55NF06
„ TEST CIRCUITS AND WAVEFORMS (Cont.)
®



Fig. 2A Switching Test Circuit ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
IAS
RG
10V
D.U.T.
VDD
VDD
ID(t)
VDS(t)
tp
tp
Time


Fig. 4A Unclamped Inductive Switching Test Circuit ʳ ʳ ʳ Fig. 4B Unclamped Inductive Switching Waveforms
Rev.02
© 2006 Thinki Semiconductor Co.,Ltd.
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55NF06
„ TYPICAL CHARACTERISTICS
®
On-Resistance Variation vs.
Drain Current and Gate Voltage
2.5
2.0



On State Current vs.
Allowable Case Temperature
102
1.5
1.0 VGS=10V
0.5 VGS=20V
0.0
0 20 40 60 80 100 120140160180 200
Drain Current, ID (A)


150°C
101
25°C
100
0.2
*Note:
1. VGS=0V
2. 250μs Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, VSD (V)

Rev.02
© 2006 Thinki Semiconductor Co.,Ltd.

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