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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220Fa package
·Low collector saturation votlage
·Complement to type 2SD1763
·High breakdown voltage
APPLICATIONS
·For use in low frequency power
amplifer applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Product Specification
2SB1186
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector -emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
-120
-120
-5
-1.5
-3.0
2.0
20
150
-55~150
UNIT
V
V
V
A
A
W
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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
Product Specification
2SB1186
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0
-120
V
V(BR)CBO Collector-base breakdown voltage
IC=-50µA; IE=0
-120
V
V(BR)EBO Emitter-base breakdown voltage
IE=-50µA; IC=0
-5
V
VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-0.1A
-2.0 V
VBEsat
Base-emitter saturation voltage
IC=-1A ;IB=-0.1A
-1.5 V
ICBO Collector cut-off current
VCB=-100V; IE=0
-1.0 µA
IEBO Emitter cut-off current
VEB=-4V; IC=0
-1.0 µA
hFE DC current gain
IC=-0.1A ; VCE=-5V
100 320
fT Transition frequency
IC=-0.1A; VCE=-5V
50 MHz
COB Collector output capacitance
IE=0;f=1MHz ; VCB=-10V
30 pF
hFE Classifications
EF
100-200
160-320
2
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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SB1186
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
Free Datasheet http://www.Datasheet4U.com