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100 V, 26 A, 20.2 mΩ Low RDS(ON)
N ch Trench Power MOSFET
GKI10301
Features
V(BR)DSS --------------------------------100 V (ID = 100 µA)
ID ---------------------------------------------------------- 26 A
RDS(ON) -------- 29.8 mΩ max. (VGS = 10 V, ID = 14.2 A)
Qg------16.9 nC (VGS = 4.5 V, VDS = 50 V, ID = 17.1 A)
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive
100 % UIL Tested
RoHS Compliant
Applications
DC-DC converters
Synchronous Rectification
Power Supplies
Package
DFN 5 × 6
8pin
DDDD
8pin
DDDD
SSSG
1pin
GSSS
1pin
Not to scale
Equivalent circuit
D(5)(6)(7)(8)
G(4)
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Test conditions
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Single Pulse Avalanche Energy
Avalanche Current
Power Dissipation
Operating Junction Temperature
VDS
VGS
TC = 25 °C,
ID
with infinite heatsink
TA = 25 °C,
mounted on PCB*
IDM
PW 100µs
Duty cycle 1 %
IS
ISM
PW 100µs
Duty cycle 1 %
VDD = 50V, L = 1 mH,
EAS
IAS = 9.4 A, unclamped,
RG = 4.7 Ω,
Refer to Figure 1
IAS
TC = 25 °C,
PD
with infinite heatsink
TA = 25 °C,
mounted on PCB*
TJ
Storage Temperature Range
TSTG
* 1 inch square 2 oz copper pad on 1.5 × 1.5 inch PCB.
S(1)(2)(3)
Rating
100
±20
26
5
51
26
51
89
16.7
59
3.1
150
55 to 150
GKI10301-DS Rev.1.6
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
http://www.sanken-ele.co.jp
Unit
V
V
A
A
A
A
A
mJ
A
W
W
°C
°C
1

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GKI10301
Thermal Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Test Conditions
Thermal Resistance
(Junction to Case)
RθJC
Thermal Resistance
(Junction to Ambient)
RθJA Mounted on PCB*
* 1 inch square 2 oz copper pad on 1.5 × 1.5 inch PCB.
Min. Typ. Max. Unit
− − 2.1 °C/W
− − 40.3 °C/W
Electrical Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Drain to Source Breakdown
Voltage
V(BR)DSS
Drain to Source Leakage Current
IDSS
Gate to Source Leakage Current
IGSS
Gate Threshold Voltage
VGS(th)
Static Drain to Source
On-Resistance
RDS(ON)
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (VGS = 10 V)
Total Gate Charge (VGS = 4.5 V)
Gate to Source Charge
Gate to Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source to Drain Diode Forward
Voltage
Source to Drain Diode Reverse
Recovery Time
Source to Drain Diode Reverse
Recovery Charge
RG
Ciss
Coss
Crss
Qg1
Qg2
Qgs
Qgd
td(on)
tr
td(off)
tf
VSD
trr
Qrr
Test Conditions
ID = 100 μA, VGS = 0 V
VDS = 100 V, VGS = 0 V
VGS = ± 20 V
VDS = VGS, ID = 650 µA
ID = 14.2 A, VGS = 10 V
ID = 7.1 A, VGS = 4.5 V
f = 1 MHz
VDS = 25 V
VGS = 0 V
f = 1 MHz
VDS = 50 V
ID = 17.1 A
VDD = 50 V
ID = 17.1 A
VGS = 10 V, RG = 4.7 Ω
Refer to Figure 2
IS = 14.2 A, VGS = 0 V
IF = 17.1 A
di/dt = 100 A/µs
Refer to Figure 3
Min. Typ. Max. Unit
100 − − V
− − 100 µA
− − ± 100 nA
1.0 2.0 2.5
V
20.2 29.8
21.6 31.2
1.5
Ω
2540
195
pF
88
36.5
16.9
6.4
nC
4.8
4.7
4.4
21.9
ns
9.4
0.9 1.5 V
44.6
ns
82.5
nC
GKI10301-DS Rev.1.6
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
2

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GKI10301
Test Circuits and Waveforms
VGS
RG
0V
L
ID
VDS
E AS
1
2
L IAS2
V(BR)DSS
V(BR)DSS VDD
VDD
VDS
ID
IAS
(a) Test Circuit
Figure 1 Unclamped Inductive Switching
(b) Waveform
V(BR)DSS
VDD
RL
RG
VGS
0V
P.W. = 10 μs
Duty cycle 1 %
VDS
VDD
VGS
VDS
td(on) tr
ton
(a) Test Circuit
Figure 2 Switching Time
td(off) tf
toff
(b) Waveform
90%
10%
90%
10%
VGS
0V
D.U.T.
RG
IF L
VDD
IF
0V
di/dt
trr
IRM × 90 %
IRM
(a) Test Circuit
Figure 3 Diode Reverse Recovery Time
(b) Waveform
GKI10301-DS Rev.1.6
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
3

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GKI10301
RDS(ON)-ID characteristics (typical)
VGS=10V
60
50
Tc = 125
40
75
30
25
20
10
0
0 10 20 30 40 50 60
ID (A)
VDS-VGS characteristics (typical)
Tc=25
0.8
0.7
0.6
0.5
0.4
0.3
ID=14.2A
0.2
ID=8.6A
0.1 ID=7.1A
0.0
0
5 10
VGS (V)
15
RDS(ON)-ID characteristics (typical)
VGS=4.5V
70
60
50
Tc = 125
40
75
30
25
20
10
0
0 10 20 30 40 50 60
ID (A)
IDR-VSD characteristics (typical)
Tc=25
60
50
40
30
20
10
0
0
VGS=10V
VGS=4.5V
3V
0V
0.5 1
VSD (V)
1.5
ID-VGS characteristics (typical)
VDS=5V
60
50
40
30
20 Tc =125
75
10 25
0
012345
VGS (V)
IDR-VSD characteristics (typical)
VDS=0V
60
50
40
30 Tc =125
20 75
25
10
0
0 0.5 1 1.5
VSD (V)
Capacitance-VDS characteristics (typical)
10000
Ciss
1000
100
Ta=25
VGS=0V
f =1MHz
10
0 10
Coss
Crss
20 30
VDS (V)
40
50
RDS(ON)-Tc characteristics (typical)
50
40
30
20
10 ID=14.2A
VGS=10V
0
25 50 75 100 125 150
Tc ()
VGS - Qg characteristics (typical)
15
10
5
Tc=25
VDS=50V
ID=17.1A
0
0 10 20 30 40
Qg (nC)
RDS(ON)-Tc characteristics (typical)
50
40
30
20
10
ID=7.1A
VGS=4.5V
0
25 50 75 100 125 150
Tc ()
GKI10301-DS Rev.1.6
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
Vth-Tc characteristics (typical)
3
2
1
ID=650uA
VGS=VDS
0
25 50 75 100 125 150
Tc ()
BVDSS-Tc characteristics (typical)
130
125
120
115
110
ID=1mA
VGS=0V
105
100
25 50 75 100 125 150
Tc ()
4

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GKI10301
PD-Ta Derating
60
40
20
0
0 50 100 150
Ta ()
SAFE OPERATING AREA
100
ID(pulse) MAX
PT=100μs
10
PT=1m s
1
1 shot
Tc=25
0.1
0.1
1
10
VDS (V)
100
1.E+01
TRANSIENT THERMAL RESISTANCE - PULSE WIDTH
1.E+00
1.E-01
1.E-02
1.E-04
1.E-03
1.E-02
1.E-01
P.T. (sec)
1.E+00
Tc = 25
1shot
VDS < 10V
1.E+01
1.E+02
GKI10301-DS Rev.1.6
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
5