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Bulletin PD-20717 rev. G 07/04
SCHOTTKY RECTIFIER
20BQ030
2 Amp
IF(AV) = 2 Amp
VR = 30V
Major Ratings and Characteristics
Characteristics
20BQ030 Units
IF(AV) Rectangular waveform
2.0
A
VRRM
IFSM @ tp = 5 µs sine
VF @ 2.0 Apk, TJ=125°C
TJ range
30
350
0.37
- 55 to 150
V
A
V
°C
Description/ Features
The 20BQ030 surface-mount Schottky rectifier has been
designed for applications requiring low forward drop and
small foot prints on PC boards. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
Small foot print, surface mountable
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Case Styles
20BQ030
www.irf.com
SMB
1

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20BQ030
Bulletin PD-20717 rev. G 07/04
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
20BQ030
30
Absolute Maximum Ratings
Parameters
20BQ Units
Conditions
IF(AV) Max. Average Forward Current
IFSM Max. Peak One Cycle Non-Repetitive
Surge Current
EAS Non-Repetitive Avalanche Energy
IAR Repetitive Avalanche Current
2.0
350
80
3.0
1.0
Electrical Specifications
A 50% duty cycle @ TL = 119 °C, rectangular wave form.
5µs Sine or 3µs Rect. pulse
Following any rated
load condition and
10ms Sine or 6ms Rect. pulse with rated VRRM applied
mJ TJ = 25 °C, IAS = 1A, L = 6mH
A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. Va = 1.5 x Vr typical
Parameters
20BQ Units
Conditions
VFM Max. Forward Voltage Drop (1)
VFM Max. Forward Voltage Drop (1)
IRM Max. Reverse Leakage Current (1)
0.470
0.550
0.370
0.470
0.5
15
CT Max. Junction Capacitance
LS Typical Series Inductance
dv/dt Max. Voltage Rate of Change
200
2.0
10000
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
V @ 2A
V @ 4A
TJ = 25 °C
V @ 2A
V @ 4A
TJ = 125 °C
mA TJ = 25 °C
mA TJ = 125 °C
VR = rated VR
pF VR = 5VDC, (test signal range 100KHz to 1Mhz) 25°C
nH Measured lead to lead 5mm from package body
V/µs
Parameters
20BQ Units
Conditions
TJ Max.Junction Temperature Range (*) - 55 to 150 °C
Tstg Max. Storage Temperature Range - 55 to 150 °C
RthJL
Max. Thermal Resistance Junction
to Lead
(**)
25
°C/W DC operation
RthJA Max. Thermal Resistance Junction
to Ambient
80 °C/W
wt Approximate Weight
0.10(0.003) g (oz.)
Case Style
SMB
Similar DO-214AA
Device Marking
IR2E
(*) dPtot
1
dTj < Rth( j-a) thermal runaway condition for a diode on its own heatsink
(**) Mounted 1 inch square PCB
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20BQ030
Bulletin PD-20717 rev. G 07/04
10 100
10 TJ = 150°C
125°C
1 100°C
0.1 75°C
50°C
TJ = 150°C
0.01
0.001
25°C
TJ = 125°C
TJ = 25°C
0.0001
0 5 10 15 20 25 30
Reverse Voltage - VR (V)
1 Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
1000
TJ = 25°C
100
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
10
0 10 20 30
Reverse Voltag e - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
D = 0.75
D = 0.50
10 D = 0.33
D = 0.25
D = 0.20
PDM
1
0.1
0.00001
Single Pulse
(Thermal Resistanc e)
Notes:
t1
t2
1. Duty fac tor D = t1 / t 2 .
2. Peak TJ = PDM x ZthJL+ TL.
0.0001
0.001
0.01
0.1
1
10
t 1 , Rectangular Pulse Duration (Sec onds)
Fig. 4 - Maximum Thermal Impedance ZthJL Characteristics
100
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20BQ030
Bulletin PD-20717 rev. G 07/04
150
140 DC
130
120
110 D = 0.20
100
D = 0.25
D = 0.33
90 D = 0.50
D = 0.75
80
Square wave (D = 0.50)
70 80%Rated VR a pplied
60 see note (2)
50
0 0.5 1 1.5 2 2.5 3
Average Forward Current - I F(AV) (A)
Fig. 5 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
1000
1.2
D = 0.20
1
D = 0.25
D = 0.33
D = 0.50
0.8 D = 0.75
RMSLimit
0.6
DC
0.4
0.2
0
0 0.5 1 1.5 2 2.5 3
Average Forward Current - I F(AV) (A)
Fig. 6 - Maximum Average Forward Dissipation
Vs. Average Forward Current
100
At Any Rated Load Condition
And With
Following
Rated
Surge
VRRM
Applied
10
10
100
1000
10000
Square Wave Pulse Duration - t p (microsec )
Fig. 7 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2) Formula used: TL = TJ - (Pd + PdREV) x RthJL ;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
4
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Outline Table
Device Marking: IR2E
20BQ030
Bulletin PD-20717 rev. G 07/04
CATHODE
ANODE
2.15 (.085)
1.80 (.071)
4.70 (.185)
4.10 (.161)
3.80 (.150)
3.30 (.130)
12
1 POLARITY 2 PART NUMBER
2.40 (.094)
1.90 (.075)
2.5 TYP.
SOLDERING PAD
(.098 TYP.)
1.30 (.051)
0.76 (.030)
5.60 (.220)
5.00 (.197)
0.30 (.012)
0.15 (.006)
2.0 TYP.
(.079 TYP.)
Outline SMB
4.2 (.165)
4.0 (.157)
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
www.irf.com
IR2E
VOLTAGE
CURRENT
IR LOGO
YYWWX
SITE ID
WEEK
2nd digit of the YEAR
"Y" = 1st digit of the YEAR "standard product"
"P" = "Lead-Free"
5