F10N60.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 F10N60 데이타시트 다운로드

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PJP10N60 / PJF10N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 10A , 600V, RDS(ON)=1.0@VGS=10V, ID=5.0A
TO-220AB / ITO-220AB
TO-220AB
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
3
1
2
GD
S
ITO-220AB
1
2
3
D
S
G
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
ORDERING INFORMATION
INTERNAL SCHEMATIC DIAGRAM
Drain
TYPE
PJP10N60
PJF10N60
MARKING
P10N60
F10N60
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
Gate
Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA ME TE R
Symbol PJP10N60 PJF10N60
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS +30
Continuous Drain Current
ID 1 0
10
Pulsed Drain Current 1)
Maximum Power Dissipation
Derating Factor
TA= 2 5 OC
IDM
PD
40
156
1.25
40
50
0.4
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
Avalanche Energy with Single Pulse
IAS=10A, VDD=50V, L=10mH
Junction-to-Case Thermal Resistance
TJ,TSTG
E AS
RθJC
-55 to +150
500
0.8 2.5
Junction-to Ambient Thermal Resistance
RθJA
62.5
100
Note: 1. Maximum DC current limited by the package
Uni ts
V
V
A
A
W
OC
mJ
OC /W
OC /W
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCTDESIGN,FUNCTIONSAND RELIABILITYWITHOUTNOTICE
March 31,2010-REV.00
PAGE . 1
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PJP10N60 / PJF10N60
ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted )
Parameter
Static
Symbol
Te s t C o nd i ti o n
Drain-Source Breakdown Voltag e
Gate Threshold Voltage
Drain-Source On-State
Resistance
Zero Gate Voltage Drain
C urre nt
Gate Body Leakage
Dynamic
B V DSS
V GS(th)
R D S ( o n)
I DSS
I GSS
VGS=0V, I D=250uA
VDS=VGS, I D=250uA
VGS= 10V, I D= 5.0A
VDS=600V, VGS=0V
VGS=+30V, VDS=0V
To ta l Ga te C ha rg e
Gate-Source Charge
Gate-Drain Charge
Turn-On D e la y Ti me
Turn-On Ri s e Ti me
Turn-Off D e la y Ti me
Turn-Off F a ll Ti me
Input Capacitance
Output Capacitance
Reverse Tra nsfer
C a p a c i ta nc e
Source-Drain Diode
Qg
Q gs
Q gd
t d(on)
tr
t d(off)
tf
C iss
C oss
C rss
V DS=480V, ID=10A ,
V GS= 1 0 V
VDD=300V, ID =10A
V GS=1 0 V, RG=25
VDS=25V, VGS=0V
f=1.0MHZ
Max. Diode Forward Current
Max.Pulsed Source Current
Diode Forward Voltage
Re ve rse Re co ve ry Ti me
Reverse Recovery Charge
IS
I SM
V SD
t rr
Q rr
-
-
IS=10A , V GS=0V
V GS=0V, IF=10A
d i /d t=1 0 0 A /us
NOTE: Plus Test : Pluse Width < 300us, Duty Cycle < 2%.
Mi n. Typ . Ma x. Uni ts
600 -
-
2.0 - 4.0
- 0.78 1.0
V
V
- - 10 uA
- - +100 nΑ
-
41.6
52
- 8.6 - nC
- 14.2 -
- 16.2 22
- 18.6 32
ns
-
40.2
86
-
22.8
38
- 1520 -
- 140 - p F
- 12.5 -
- - 10 A
- - 40 A
- - 1.4 V
- 420 - ns
- 4.2 - uC
March 31,2010-REV.00
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PJP10N60 / PJF10N60
Typical Characteristics Curves ( Ta=25, unless otherwise noted)
20
VGS= 20V~ 6.0V
16
12 5.0V
8
4
0
0 5 10 15 20 25 30
VDS - Drain-to-Source Voltage (V)
Fig.1 Output Characteristric
100
VDS =50V
10
TJ = 125oC
1
25oC
0.1
-55oC
0.01
23456
VGS - Gate-to-Source Voltage (V)
Fig.2 Transfer Characteristric
7
2
1.5
1 VGS=10V
0.5 VGS = 20V
0
0 2 4 6 8 10 12 14 16 18 20
ID - Drain Current (A)
Fig.3 On Resistance vs Drain Current
4
ID =5.0A
3
2
1 TJ =25oC
0
3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
Fig.4 On Resistance vs Gate to Source Voltage
2.8
VGS =10 V
2.4 ID =5.0A
2
1.6
1.2
0.8
0.4
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (oC)
Fig.5 On Resistance vs Junction Temperature
March 31,2010-REV.00
2800
2400
f = 1MHz
VGS = 0V
2000
1600
Ciss
1200
C
800
400
Crss
0
C
C
Coss
0 5 10 15 20 25 30
VDS - Drain-to-Source Voltage (V)
Fig.6 Capacitance
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PJP10N60 / PJF10N60
Typical Characteristics Curves ( Ta=25, unless otherwise noted)
12
ID =10A
10
VDS=480V
8 VDS=300V
VDS=120V
6
4
2
0
0 5 10 15 20 25 30 35 40
Qg - Gate Charge (nC)
Fig. 7 Gate Charge Waveform
45
1.2
ID = 250µA
1.1
1
0.9
0.8
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (oC)
Fig.9 Breakdown Voltage vs Junction Temperature
10 VGS = 0V
1
TJ = 125oC
0.1
25oC
-55oC
0.01
0.2 0.4 0.6 0.8 1 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Fig.8 Source-Drain Diode Forward Voltage
March 31,2010-REV.00
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PJP10N60 / PJF10N60
LEGAL STATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
March 31,2010-REV.00
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