F10N60.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 F10N60 데이타시트 다운로드

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PJP10N60 / PJF10N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 10A , 600V, RDS(ON)=1.0@VGS=10V, ID=5.0A
TO-220AB / ITO-220AB
TO-220AB
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
3
1
2
GD
S
ITO-220AB
1
2
3
D
S
G
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
ORDERING INFORMATION
INTERNAL SCHEMATIC DIAGRAM
Drain
TYPE
PJP10N60
PJF10N60
MARKING
P10N60
F10N60
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
Gate
Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA ME TE R
Symbol PJP10N60 PJF10N60
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS +30
Continuous Drain Current
ID 1 0
10
Pulsed Drain Current 1)
Maximum Power Dissipation
Derating Factor
TA= 2 5 OC
IDM
PD
40
156
1.25
40
50
0.4
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
Avalanche Energy with Single Pulse
IAS=10A, VDD=50V, L=10mH
Junction-to-Case Thermal Resistance
TJ,TSTG
E AS
RθJC
-55 to +150
500
0.8 2.5
Junction-to Ambient Thermal Resistance
RθJA
62.5
100
Note: 1. Maximum DC current limited by the package
Uni ts
V
V
A
A
W
OC
mJ
OC /W
OC /W
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCTDESIGN,FUNCTIONSAND RELIABILITYWITHOUTNOTICE
March 31,2010-REV.00
PAGE . 1
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PJP10N60 / PJF10N60
ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted )
Parameter
Static
Symbol
Te s t C o nd i ti o n
Drain-Source Breakdown Voltag e
Gate Threshold Voltage
Drain-Source On-State
Resistance
Zero Gate Voltage Drain
C urre nt
Gate Body Leakage
Dynamic
B V DSS
V GS(th)
R D S ( o n)
I DSS
I GSS
VGS=0V, I D=250uA
VDS=VGS, I D=250uA
VGS= 10V, I D= 5.0A
VDS=600V, VGS=0V
VGS=+30V, VDS=0V
To ta l Ga te C ha rg e
Gate-Source Charge
Gate-Drain Charge
Turn-On D e la y Ti me
Turn-On Ri s e Ti me
Turn-Off D e la y Ti me
Turn-Off F a ll Ti me
Input Capacitance
Output Capacitance
Reverse Tra nsfer
C a p a c i ta nc e
Source-Drain Diode
Qg
Q gs
Q gd
t d(on)
tr
t d(off)
tf
C iss
C oss
C rss
V DS=480V, ID=10A ,
V GS= 1 0 V
VDD=300V, ID =10A
V GS=1 0 V, RG=25
VDS=25V, VGS=0V
f=1.0MHZ
Max. Diode Forward Current
Max.Pulsed Source Current
Diode Forward Voltage
Re ve rse Re co ve ry Ti me
Reverse Recovery Charge
IS
I SM
V SD
t rr
Q rr
-
-
IS=10A , V GS=0V
V GS=0V, IF=10A
d i /d t=1 0 0 A /us
NOTE: Plus Test : Pluse Width < 300us, Duty Cycle < 2%.
Mi n. Typ . Ma x. Uni ts
600 -
-
2.0 - 4.0
- 0.78 1.0
V
V
- - 10 uA
- - +100 nΑ
-
41.6
52
- 8.6 - nC
- 14.2 -
- 16.2 22
- 18.6 32
ns
-
40.2
86
-
22.8
38
- 1520 -
- 140 - p F
- 12.5 -
- - 10 A
- - 40 A
- - 1.4 V
- 420 - ns
- 4.2 - uC
March 31,2010-REV.00
PAGE . 2

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PJP10N60 / PJF10N60
Typical Characteristics Curves ( Ta=25, unless otherwise noted)
20
VGS= 20V~ 6.0V
16
12 5.0V
8
4
0
0 5 10 15 20 25 30
VDS - Drain-to-Source Voltage (V)
Fig.1 Output Characteristric
100
VDS =50V
10
TJ = 125oC
1
25oC
0.1
-55oC
0.01
23456
VGS - Gate-to-Source Voltage (V)
Fig.2 Transfer Characteristric
7
2
1.5
1 VGS=10V
0.5 VGS = 20V
0
0 2 4 6 8 10 12 14 16 18 20
ID - Drain Current (A)
Fig.3 On Resistance vs Drain Current
4
ID =5.0A
3
2
1 TJ =25oC
0
3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
Fig.4 On Resistance vs Gate to Source Voltage
2.8
VGS =10 V
2.4 ID =5.0A
2
1.6
1.2
0.8
0.4
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (oC)
Fig.5 On Resistance vs Junction Temperature
March 31,2010-REV.00
2800
2400
f = 1MHz
VGS = 0V
2000
1600
Ciss
1200
C
800
400
Crss
0
C
C
Coss
0 5 10 15 20 25 30
VDS - Drain-to-Source Voltage (V)
Fig.6 Capacitance
PAGE. 3