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NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P70N02LS
TO-263 (D2PAK)
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25 7mΩ
ID
70A
D
G
1. GATE
2. DRAIN
3. SOURCE
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VGS ±
ID
IDM
IAR
EAS
EAR
PD
Tj, Tstg
TL 275
LIMITS
20
70
45
170
60
140
5.6
65
38
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
Case-to-Heatsink
RθCS
1Pulse width limited by maximum junction temperature.
2Duty cycle 1
TYPICAL
0.6
MAXIMUM
2.3
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER SY
MBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS V
IDSS
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
DS = 0V, VGS = ±20V
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125 °C
LIMITS
UNIT
MIN T YP MAX
25
1 1.5
3
±250
25
250
V
nA
µA
1 MAY-24-2001
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NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P70N02LS
TO-263 (D2PAK)
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs V
VDS = 10V, VGS = 10V
VGS = 10V, ID = 30A
VGS = 7V, ID = 24A
DS = 15V, ID = 30A
70
7
8
16
9
10
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 15V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 35A
VDS = 15V, RL = 1Ω
ID 30A, VGS = 10V, RGS = 2.5Ω
2700
500
200
25
7
11
7
7
24
6
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3 I
Forward Voltage1 V
IS
SM
SD I
F = IS, VGS = 0V
70
170
1.3
Reverse Recovery Time
trr
37
Peak Reverse Recovery Current
IRM(REC)
IF = IS, dlF/dt = 100A / µS
200
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
0.043
A
mΩ
S
pF
nC
nS
A
V
nS
A
µC
REMARK: THE PRODUCT MARKED WITH “P70N02LS”, DATE CODE or LOT #
2 MAY-24-2001

No Preview Available !

NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P70N02LS
TO-263 (D2PAK)
TO-263 (D2PAK) MECHANICAL DATA
Dimension
Min. T
A 14.5
B 4.2
C 1.20
D 2.8
E 0.3
F -0.102
G 8.5
mm
yp.
15
0.4
9
Dimension
Max.
15.8
H
4.7 I 9.8
1.35
J
K
0.5 L 0.7
0.203
M
9.5 N
Min. T
1.0
mm
yp.
1.5
6.5
1.5
4.83 5.08 5.33
Max.
1.8
10.3
1.4
3 MAY-24-2001