D75E60.pdf 데이터시트 (총 7 페이지) - 파일 다운로드 D75E60 데이타시트 다운로드

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Fast Switching Emitter Controlled Diode
IDW75E60
Features:
600V EmCon technology
Fast recovery
Soft switching
Low reverse recovery charge
Low forward voltage
175°C junction operating temperature
Easy paralleling
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models:
http://www.infineon.com/emcon/
Applications:
Welding
Motor drives
PG-TO247-3
Type
IDW75E60
VRRM
600V
IF
75A
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Continuous forward current
TC = 25C
TC = 90C
TC = 100C
Surge non repetitive forward current
TC = 25C, tp = 10 ms, sine halfwave
Maximum repetitive forward current
TC = 25C, tp limited by tj,max, D = 0.5
Power dissipation
TC = 25C
TC = 90C
TC = 100C
Operating junction temperature
Storage temperature
Soldering temperature
1.6mm (0.063 in.) from case for 10 s
VF,Tj=25°C
1.65V
Tj,max
175C
Marking
D75E60
Package
PG-TO247-3
Symbol
VRRM
IF
IFSM
IFRM
Ptot
Tj
Tstg
TS
Value
600
120
82
75
220
225
Unit
V
A
A
A
300
170
150
-40…+175
-55...+150
260
W
°C
IFAG IPC TD VLS
1
Rev. 2.2 20.09.2013
http://www.Datasheet4U.com

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IDW75E60
Thermal Resistance
Parameter
Characteristic
Thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJA
Conditions
Max. Value
0.5
40
Unit
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
min.
Value
typ.
Unit
max.
Static Characteristic
Collector-emitter breakdown voltage
Diode forward voltage
VRRM
VF
Reverse leakage current
IR
IR=0.25mA
IF=75A
Tj=25C
Tj=175C
VR=600V
Tj=25C
Tj=175C
600
-
-
-
-
Dynamic Electrical Characteristics
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irr
Diode peak rate of fall of reverse
recovery current during tb
dIrr/dt
Tj=25C
VR=400V, IF=75A,
dIF/dt=1460A/µs
-
-
-
-
- -V
1.65 2.0
1.65 -
A
- 40
- 2500
121 - ns
2.4 - µC
38.5 - A
921 - A/µs
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
trr
Qrrm
Irr
dIrr/dt
Tj=125C
VR=400V, IF=75A,
dIF/dt=1460A/µs
-
-
-
-
155
4.4
46.6
960
- ns
- µC
-A
- A/µs
Diode reverse recovery time
trr Tj=175C
- 182 - ns
Diode reverse recovery charge
Qrrm
VR=400V, IF=75A,
-
5.8
- µC
Diode peak reverse recovery current Irr
dIF/dt=1460A/µs
- 56.2 - A
Diode peak rate of fall of reverse
recovery current during tb
dIrr/dt
- 1013 - A/µs
IFAG IPC TD VLS
2
Rev. 2.2 20.09.2013

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IDW75E60
300W
250W
200W
150W
100W
50W
0W
25°C 50°C 75°C 100°C 125°C 150°C
Figure 1.
TC, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(Tj 175C)
120A
90A
60A
30A
0A
25°C
75°C
125°C
Figure 2.
TC, CASE TEMPERATURE
Diode forward current as a
function of case temperature
(Tj 175C)
200A
150A
100A
T =25°C
J
175°C
2.0V
1.5V
1.0V
IF=150A
75A
37.5A
50A 0.5V
0A
0V 1V 2V
VF, FORWARD VOLTAGE
Figure 3. Typical diode forward current as
a function of forward voltage
0.0V
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 4. Typical diode forward voltage as a
function of junction temperature
IFAG IPC TD VLS
3
Rev. 2.2 20.09.2013

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IDW75E60
200ns
150ns
100ns
50ns
TJ=175°C
TJ=25°C
5µC
4µC
3µC
2µC
1µC
TJ=175°C
TJ=25°C
0ns
1000A/µs
1500A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 5. Typical reverse recovery time as
a function of diode current slope
(VR=400V, IF=75A,
Dynamic test circuit in Figure E)
0µC
1000A/µs
1500A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 6. Typical reverse recovery charge
as a function of diode current
slope
(VR = 400V, IF = 75A,
Dynamic test circuit in Figure E)
TJ=175°C
60A
50A
40A
TJ=25°C
30A
20A
10A
0A
1000A/µs
1500A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 7. Typical reverse recovery current
as a function of diode current
slope
(VR = 400V, IF = 75A,
Dynamic test circuit in Figure E)
-1200A/µs
-1000A/µs
-800A/µs
TJ=175°C
TJ=25°C
-600A/µs
-400A/µs
-200A/µs
0A/µs
1000A/µs
1500A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 8. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=400V, IF=75A,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
4
Rev. 2.2 20.09.2013

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D=0.5
10-1K/W
0.2
0.1
0.05
10-2K/W
0.02
0.01
R,(K/W)
0.0556
0.1757
0.12374
0.12192
0.02305
R1
, (s)
0.1495
0.02797
3.623 E-3
3.276 E-4
2.635 E-5
R2
single pulse
C1=1/R1 C2=2/R2
1µs 10µs 100µs 1ms 10ms 100ms
Figure 9.
tP, PULSE WIDTH
Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
IDW75E60
IFAG IPC TD VLS
5
Rev. 2.2 20.09.2013