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Y45KKD
HIGH F REQUENCY THYRISTOR
Features
Int erdigitated amplifying gates
Fast turn-on and high di/dt
Low switching losses
Short turn-off time
Hermetic metal cases with ceramic insulators
Typical Applications
Ind uctive heating
E lectronic welders
S elf-commutated inverters
AC motor speed control
General power switching applications
IT(AV)
VDRM/VRRM
tq
ITSM
1010A
1200~1600V
18~36µs
11kA
SYMBOL CHAR
ACTERISTIC
TEST CONDITIONS
Tj(C)
VALUE
Min T ype Max
UNIT
IT(AV) Mean
on-state current
180half sine wave 50Hz
Double side cooled,
TC=55C
TC=85C
old model
125
1010
700
600
A
VDRM
VRRM
IDRM
IRRM
ITSM S
I2t I
VTO Th
rT
VTM P
dv/dt
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Repetitive peak off-state current
Repetitive peak reverse current
urge on-state current
2T for fusing coordination
reshold voltage
On-state slop resistance
eak on-state voltage
Critical rate of rise of off-state voltage
di/dt Critical rate of rise of on-state current
Qrr R
ecovery charge
tq Circuit commutated turn-off time
IGT Gate trigger current
VGT Gate
trigger voltage
IH H olding current
VGD N
Rth(j-c)
Rth(c-h)
on-trigger gate voltage
Thermal resistance
Junction to case
Thermal resistance
case to heat sink
Fm Moun
ting force
Tstg S
tored temperature
Wt We
ight
Outline
VDRM&VRRM ,tp=10ms
VDsM&VRsM= VDRM&VRRM+100V
VD= VDRM
VR= VRRM
10ms half sine wave
VR=0.6VRRM
ITM=1800A, F=21kN
VDM=0.67VDRM 125
VDM= 67%VDRM t o 1600A,
Gate pulse tr 0.5μs IGM=1.5A
ITM=1000A,tp=2000µs,
di/dt=-60A/µs,VR=50V
ITM=800A,tp=1000µs, VR =50V
dv/dt=30V/µs ,di/dt=-20A/µs
VA=12V, IA=1A 25
VDM=67%VDRM 125
At 1800 sine, double side cooled
Clamping force 21kN
KT44cT
125 1200
1600
V
125 50 mA
11 kA
125
605 A2s*103
1. 70
V
125
0.48 m
125 2.56 V
200 V/μs
125
1500
A/μs
125 83
100 µC
125 18
36 µs
30 250 mA
0.8 3.0 V
20 400 mA
0.3 V
0.024
0.006
C /W
18
-40
3800
25
140
kN
C
g
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Peak On-state VYo4lta0gKeKVDs.YP4e5akKKODn-state Current
5
4.5 TJ=125°C
4
3.5
3
2.5
2
1.5
1
10
100
1000
10000
Instantaneous on-state current,amperes
Fig.1
Surge Cur1r1ent Vs.Cycles
12
10
8
6
4
2
1 10
Cycles at 50Hz
Fig.3
100
Gate characteristic at 25°C junction temperature
18
16
14 PGM=120W
12
max.
(100μs Spulse)
10
8
6 min.
4
PG2W
2
0
04
8 12 16
Gate current,IGTA
20
Fig.5
Y45KKD
Max . junction To Ca0se.0T2h4ermai Impedance Vs.Time
0.025
0.02
0.015
0.01
0.005
0
0.001
0.01
0.1 1
Time,seconds
Fig.2
10
I26t 0V5 s1.1Time
650
550
450
350
250
150
11
Time,m.seconds
Fig.4
0
Gate Trigger Z3o.0nVe,a2t5v0amrAies temperature
4.5
-30°C
4
-10°C
3.5
25°C
3
2.5 125°C
2
1.5
1
0.5
0
0 100 200 300 400
Gate current,IGTmA
Fig.6
500
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Outline:
Y45KKD
http://www.tech-sem.com
Page 3 of 3