BAS70S3.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 BAS70S3 데이타시트 다운로드

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CYStech Electronics Corp.
Small Signal Schottky (double) diodes
BAS70S3/BAS70AS3
BAS70CS3/BAS70SS3
Spec. No. : C248S3
Issued Date : 2012.07.09
Revised Date :
Page No. : 1/6
Description
Planar silicon Schottky barrier diodes encapsulated in a SOT-323 very small plastic SMD package.
Single diodes and double diodes with different pinning are available.
Features
Guard ring protected
Low forward voltage drop
Very small plastic SMD package
Pb-free package
Applications
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes
Pinning
Pin
BAS70
1A
2 NC
3K
Description
BAS70A BAS70C
K1 A1
K2 A2
A1,A2
K1,K2
BAS70S
A1
K2
K1,A1
Outline
SOT-323
3
33
1
(1) BAS70
3
2
N.C.
12
(2)BAS70A
3
1
(3)BAS70C
2
1
(4)BAS70S
2
Diode configuration and symbol
12
Marking:
Type
BAS70 S3
BAS70AS3
BAS70CS3
BAS70SS3
Marking Code
K73
K76
K75
K74
BAS70S3/BAS70AS3/BAS70CS3/BAS70SS3 C
YStek Product Specification
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CYStech Electronics Corp.
Absolute Maximum Ratings
Symbol Parameter
Per diode
VR continuous reverse voltage
IF continuous forward current
IFRM repetitive peak forward current
Ptot total power dissipation (per package)
Tstg storage temperature
Tamb operating ambient temperature
Conditions
tp1s, δ≤0.5
Tamb25
Spec. No. : C248S3
Issued Date : 2012.07.09
Revised Date :
Page No. : 2/6
Min Max Unit
- 70 V
- 70 mA
- 100 mA
- 200 mW
-65 +150
-55 +125
Characteristics (Ta=25°C, unless otherwise specified)
Parameter
Reverse Breakdown Voltage
Forward Voltage (Note 1)
Reverse Leakage Current (Note 1)
Diode Capacitance
Reverse Recovery Time
Symbol
VBR
VF(1)
VF(2)
IR
CD
trr
Condition
IR=10μA
IF=1mA
IF=15mA
VR=50V
VR=0V, f=1MHz
when switched from IF= 10mA
to IR=10mA; RL=100Ω;
measured at IR=1mA
Notes: 1.pulse test, tp=300μs, duty cycle<2%.
Min.
70
-
-
-
-
-
Max.
-
410
1000
100
2
5
Unit
V
mV
mV
nA
pF
ns
Thermal Characteristics
Symbol
Rth j-a
Parameter
thermal resistance from junction to ambient
Note 1 : Refer to SOT-323 standard mounting conditions.
Conditions
note 1
Value
625
Unit
K/W
BAS70S3/BAS70AS3/BAS70CS3/BAS70SS3 C
YStek Product Specification

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CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C248S3
Issued Date : 2012.07.09
Revised Date :
Page No. : 3/6
Ordering Information
Device
BAS70S3
BAS70AS3
BAS70CS3
BAS70SS3
Package
SOT-323
(Pb-free)
SOT-323
(Pb-free)
SOT-323
(Pb-free)
SOT-323
(Pb-free)
BAS70S3/BAS70AS3/BAS70CS3/BAS70SS3 C
Shipping
3000 pcs / Tape & Reel
3000 pcs / Tape & Reel
3000 pcs / Tape & Reel
3000 pcs / Tape & Reel
Marking
K73
K76
K75
K74
YStek Product Specification

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Reel Dimension
CYStech Electronics Corp.
Spec. No. : C248S3
Issued Date : 2012.07.09
Revised Date :
Page No. : 4/6
Carrier Tape Dimension
BAS70S3/BAS70AS3/BAS70CS3/BAS70SS3 C
YStek Product Specification

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CYStech Electronics Corp.
Spec. No. : C248S3
Issued Date : 2012.07.09
Revised Date :
Page No. : 5/6
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
Temperature Min(TS min)
Temperature Max(TS max)
Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
Temperature (TL)
Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BAS70S3/BAS70AS3/BAS70CS3/BAS70SS3 C
YStek Product Specification