BSS123N3.pdf 데이터시트 (총 8 페이지) - 파일 다운로드 BSS123N3 데이타시트 다운로드

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CYStech Electronics Corp.
Spec. No. : C580N3
Issued Date : 2011.09.16
Revised Date : 2018.06.20
Page No. : 1/8
N-CHANNEL MOSFET
BSS123N3
BVDSS
ID@VGS=10V, TA=25°C
VGS=10V, ID=700mA
VGS=4V, ID=400mA
RDSON(TYP)
VGS=10V, ID=170mA
VGS=4V, ID=170mA
Description
The BSS123N3 is a N-channel enhancement-mode MOSFET.
100V
1.7A
290mΩ
310mΩ
260mΩ
280mΩ
Features
Low on-resistance
High speed switching
Low-voltage drive(2.5V)
Easily designed drive circuits
Pb-free lead plating and halogen-free package
Symbol
BSS123N3
Outline
SOT-23
D
GGate
SSource
DDrain
S
G
Ordering Information
Device
BSS123N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7reel
Product rank, zero for no rank products
Product name
BSS123N3
CYStek Product Specification

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CYStech Electronics Corp.
Spec. No. : C580N3
Issued Date : 2011.09.16
Revised Date : 2018.06.20
Page No. : 2/8
Absolute Maximum Ratings (Ta=25C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V
Pulsed Drain Current
Total Power Dissipation
Channel Temperature
Junction and Storage Temperature Range
Symbol
VDSS
VGSS
ID
IDP
PD
TCH
Tj ; Tstg
Limits
100
±20
1.7
6.8
1.38
+150
-55~+150
Note : *1. Pulse Width 300μs, Duty cycle 2%
*2. When the device is surface mounted on 1 in²copper pad of FR-4 board with 2 oz. copper.
*1
*2
Unit
V
A
W
C
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient
Symbol
Rth,ja
Limit
90
Unit
C/W
Note : Surface mounted on 1 in²copper pad of FR-4 board, 350C/W when mounted on minimum copper pad.
Electrical Characteristics (Ta=25C)
Symbol
Min.
Typ. Max.
Static
BVDSS*
VGS(th)
IGSS
IDSS
RDS(ON)*
GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
100
1
-
-
-
-
-
-
0.08
-
-
-
-
-
-
-
-
-
-
--
- 2.5
- ±100
-1
290 400
310 450
260 400
280 400
1-
512 -
15 -
11 -
3.1 -
1.2 -
9.7 -
1.4 -
3.6 -
1.8 -
0.6 -
Unit
V
nA
μA
m
S
pF
ns
nC
BSS123N3
Test Conditions
VGS=0V, ID=10μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0V
VDS=100V, VGS=0V
ID=700mA, VGS=10V
ID=400mA, VGS=4V
ID=170mA, VGS=10V
ID=170mA, VGS=4V
VDS=10V, ID=170mA
VDS=25V, VGS=0V, f=1MHz
VDD=30V, ID=1.7A, VGS=10V, RGEN=6Ω
VDD=30V, ID=1.7A, VGS=10V
CYStek Product Specification

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Source-Drain Diode
*IS -
*ISM
-
*VSD
-
CYStech Electronics Corp.
Spec. No. : C580N3
Issued Date : 2011.09.16
Revised Date : 2018.06.20
Page No. : 3/8
-
-
1.7
6.8
A
- 1.2 V VGS=0V, ISD=1A
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
Recommended Soldering Footprint
BSS123N3
CYStek Product Specification

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CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C580N3
Issued Date : 2011.09.16
Revised Date : 2018.06.20
Page No. : 4/8
Typical Output Characteristics
8
10V
7 8V
6 7V
6V
5 4.5V
4V
4 3.5V
3
2 VGS=3V
1
0
012345
Drain-Source Voltage -VDS(V)
6
Breakdown Voltage vs Junction Temperature
140
ID=250μA
130
120
110
100
-60 -40 -20 0 20 40 60 80 100 120 140 160
Junction Temperature-Tj(°C)
Static Drain-Source On-State resistance vs Drain Current
10000
1000
VGS=2.5V
VGS=3V
VGS=4.5V
VGS=10V
100
0.001
0.01 0.1
Drain Current-ID(A)
1
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
1000
900
800
700
600
500
400 ID=700mA
300
200 ID=400mA
100
0
0 2 4 6 8 10
Gate-Source Voltage-VGS(V)
Reverse Drain Current vs Source-Drain Voltage
1.2
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Reverse Drain Current -IDR(A)
1
Drain-Source On-State Resistance vs Junction Tempearture
700
650
600
550
500
450
400
350
300
250
200
150
100
-60
VGS=10V, ID=700mA
VGS=4V, ID=400mA
VGS=10V, ID=170mA
-20 20
60 100 140
Junction Temperature-Tj(°C)
180
BSS123N3
CYStek Product Specification

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CYStech Electronics Corp.
Typical Characteristics(Cont.)
Spec. No. : C580N3
Issued Date : 2011.09.16
Revised Date : 2018.06.20
Page No. : 5/8
Capacitance vs Drain-to-Source Voltage
1000
Ciss
100
Coss
Crss
10
0
5 10 15 20 25 30
Drain-Source Voltage -VDS(V)
35
Gate Charge Characteristics
12
10 VDS=30V
VDS=50V
8
VDS=70V
6
4
2 ID=1.7A
0
012 345
Total Gate Charge---Qg(nC)
Maximum Safe Operating Area
10
RDS(ON) limited
100μs
1ms
1
10ms
0.1 Ta=25°C, Single pulse,
mounted on a 1 in² FR-4
boad with 2 oz. copper.
RθJA=90°C/W
100ms
DC
0.01
0.1
1 10 100
Drain-Source Voltage -VDS(V)
1000
Threshold Voltage vs Junction Tempearture
2.4
2.2 ID=250uA
2
1.8
1.6
1.4
1.2
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
Junction Temperature-Tj(°C)
Typical Transfer Characteristics
8
7
6
5
4
3
2
VDS=5V
1
0
0 5 10 15
Gate-Source Voltage-VGS(V)
1.60
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0.00
0
Power Derating Curve
mounted on a 1 in² FR
board with 2 oz. copper
50 100 150
Ambient Temperature---TA(℃)
200
BSS123N3
CYStek Product Specification