J6820.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 J6820 데이타시트 다운로드

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FJL6820
High Voltage Color Display Horizontal
Deflection Output
• High Collector-Base Breakdown Voltage : BVCBO = 1500V
• Low Saturation Voltage : VCE(sat) = 3V (Max.)
• For Color Monitor
1 TO-264
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP* Collector Current (Pulse)
PC Collector Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
* Pulse Test: PW=300µs, duty Cycle=2% Pulsed
Rating
1500
750
6
20
30
200
150
-55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
ICES
Collector Cut-off Current
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
hFE1
hFE2
hFE3
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
tSTG*
Storage Time
tF* Fall Time
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
VCB=1400V, RBE=0
VCB=800V, IE=0
VEB=4V, IC=0
IC=500µA, IE=0
IC=5mA, IB=0
IE=500µA, IC=0
VCE=5V, IC=1A
VCE=5V, IC=8.5A
VCE=5V, IC=11A
IC=11A, IB=2.75A
IC=11A, IB=2.75A
VCC=200V, IC=10A, RL=20
IB1=2.0A, IB2= - 4.0A
Min.
1500
750
6
8
6
5.5
Typ.
0.15
Max.
1
10
1
10
8.5
3
1.5
3
0.2
Units
mA
µA
mA
V
V
V
V
V
µs
µs
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
RθjC Thermal Resistance, Junction to Case
Typ
Max
0.625
Units
°C/W
© 2001 Fairchild Semiconductor Corporation
Rev. A1, May 2001
http://www.Datasheet4U.com

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Typical Characteristics
14
IB=2.0A
12
IB=1.8A
IB=1.6A
IB=1.4A
10 IB=1.2A
IB=1.0A
8 IB=0.8A
IB=0.6A
6
IB=0.4A
4
IB=0.2A
2
0
0 2 4 6 8 10 12
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristics
10
I =3I
CB
Ta = 1250C
1 Ta = 250C
Ta = - 250C
0.1
0.01
0.1
1 10
I [A], COLLECTOR CURRENT
C
100
Figure 3. Collector-Emitter Saturation Voltage
16
V = 5V
CE
14
12
10
8
6 1250C
4
2
250C
- 250C
0
0.0 0.2 0.4 0.6 0.8 1.0
V [V], BASE-EMITTER VOLTAGE
BE
Figure 5. Base-Emitter On Voltage
1.2
© 2001 Fairchild Semiconductor Corporation
100
Ta = 1250C
Ta = 250C
10
Ta = - 250C
V = 5V
CE
1
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 2. DC Current Gain
100
10
I =5I
CB
1
Ta = 250C
Ta = 1250C
0.1 Ta = - 250C
0.01
0.1
1 10
IC[A], COLLECTOR CURRENT
100
Figure 4. Collector-Emitter Saturation Voltage
10
IB1 = 2A, VCC = 200V
I = 10A
tSTG
C
1
tF
0.1
0.01
0.1
1 10
IB2 [A], REVERSE BASE CURRENT
100
Figure 6. Resistive Load Switching Time
Rev. A1, May 2001

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Typical Characteristics (Continued)
10
IB2 = - 4A, VCC = 200V
I = 10A
C
tSTG
1
tF
0.1
1
IB1 [A], FORWARD BASE CURRENT
10
Figure 7. Resistive Load Switching Time
100
IC (Pulse) t = 100ms t = 10ms
10 IC (DC)
t = 1ms
1
0.1
T = 25oC
C
Single Pulse
0.01
1
10
100
1000
10000
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Forward Bias Safe Operating Area
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175
TC [OC], CASE TEMPERATURE
Figure 11. Power Derating
© 2001 Fairchild Semiconductor Corporation
10
I = 2A, I = - 4A
B1 B2
V = 200V
CC
tSTG
1
tF
0.1
1 10 100
IC [A], COLLECTOR CURRENT
Figure 8. Resistive Load Switching Time
40
R = 0, I = 15A
B2 B1
35 VCC = 30V, L = 200µH
30
25
20
15
VBE(off) = - 6V
10
5
VBE(off) = - 3V
1
10
100
1000
10000
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 10. Reverse Bias Safe Operating Area
Rev. A1, May 2001

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Package Demensions
TO-264
20.00 ±0.20
(8.30)
(8.30)
(1.00)
(2.00)
(R1.00)
(7.00) (7.00)
(0.50)
4.90 ±0.20
(1.50)
2.50 ±0.20
5.45TYP
[5.45 ±0.30]
(1.50)
3.00 ±0.20
1.00
+0.25
–0.10
5.45TYP
[5.45 ±0.30]
(1.50)
0.60
+0.25
–0.10
2.80 ±0.30
© 2001 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A1, May 2001

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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
Preliminary
First Production
No Identification Needed
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
© 2001 Fairchild Semiconductor Corporation
Rev. H2