J6820.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 J6820 데이타시트 다운로드

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FJL6820
High Voltage Color Display Horizontal
Deflection Output
• High Collector-Base Breakdown Voltage : BVCBO = 1500V
• Low Saturation Voltage : VCE(sat) = 3V (Max.)
• For Color Monitor
1 TO-264
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP* Collector Current (Pulse)
PC Collector Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
* Pulse Test: PW=300µs, duty Cycle=2% Pulsed
Rating
1500
750
6
20
30
200
150
-55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
ICES
Collector Cut-off Current
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
hFE1
hFE2
hFE3
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
tSTG*
Storage Time
tF* Fall Time
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
VCB=1400V, RBE=0
VCB=800V, IE=0
VEB=4V, IC=0
IC=500µA, IE=0
IC=5mA, IB=0
IE=500µA, IC=0
VCE=5V, IC=1A
VCE=5V, IC=8.5A
VCE=5V, IC=11A
IC=11A, IB=2.75A
IC=11A, IB=2.75A
VCC=200V, IC=10A, RL=20
IB1=2.0A, IB2= - 4.0A
Min.
1500
750
6
8
6
5.5
Typ.
0.15
Max.
1
10
1
10
8.5
3
1.5
3
0.2
Units
mA
µA
mA
V
V
V
V
V
µs
µs
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
RθjC Thermal Resistance, Junction to Case
Typ
Max
0.625
Units
°C/W
© 2001 Fairchild Semiconductor Corporation
Rev. A1, May 2001
http://www.Datasheet4U.com

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Typical Characteristics
14
IB=2.0A
12
IB=1.8A
IB=1.6A
IB=1.4A
10 IB=1.2A
IB=1.0A
8 IB=0.8A
IB=0.6A
6
IB=0.4A
4
IB=0.2A
2
0
0 2 4 6 8 10 12
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristics
10
I =3I
CB
Ta = 1250C
1 Ta = 250C
Ta = - 250C
0.1
0.01
0.1
1 10
I [A], COLLECTOR CURRENT
C
100
Figure 3. Collector-Emitter Saturation Voltage
16
V = 5V
CE
14
12
10
8
6 1250C
4
2
250C
- 250C
0
0.0 0.2 0.4 0.6 0.8 1.0
V [V], BASE-EMITTER VOLTAGE
BE
Figure 5. Base-Emitter On Voltage
1.2
© 2001 Fairchild Semiconductor Corporation
100
Ta = 1250C
Ta = 250C
10
Ta = - 250C
V = 5V
CE
1
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 2. DC Current Gain
100
10
I =5I
CB
1
Ta = 250C
Ta = 1250C
0.1 Ta = - 250C
0.01
0.1
1 10
IC[A], COLLECTOR CURRENT
100
Figure 4. Collector-Emitter Saturation Voltage
10
IB1 = 2A, VCC = 200V
I = 10A
tSTG
C
1
tF
0.1
0.01
0.1
1 10
IB2 [A], REVERSE BASE CURRENT
100
Figure 6. Resistive Load Switching Time
Rev. A1, May 2001

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Typical Characteristics (Continued)
10
IB2 = - 4A, VCC = 200V
I = 10A
C
tSTG
1
tF
0.1
1
IB1 [A], FORWARD BASE CURRENT
10
Figure 7. Resistive Load Switching Time
100
IC (Pulse) t = 100ms t = 10ms
10 IC (DC)
t = 1ms
1
0.1
T = 25oC
C
Single Pulse
0.01
1
10
100
1000
10000
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Forward Bias Safe Operating Area
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175
TC [OC], CASE TEMPERATURE
Figure 11. Power Derating
© 2001 Fairchild Semiconductor Corporation
10
I = 2A, I = - 4A
B1 B2
V = 200V
CC
tSTG
1
tF
0.1
1 10 100
IC [A], COLLECTOR CURRENT
Figure 8. Resistive Load Switching Time
40
R = 0, I = 15A
B2 B1
35 VCC = 30V, L = 200µH
30
25
20
15
VBE(off) = - 6V
10
5
VBE(off) = - 3V
1
10
100
1000
10000
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 10. Reverse Bias Safe Operating Area
Rev. A1, May 2001