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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1409
DESCRIPTION
www.dat·aWshiethet4TuO.co-2m20Fa package
·High DC current gain
·DARLINGTON
APPLICATIONS
·Igniter applications
·High volitage switching applications
PINNING
PIN DE
SCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL P
ARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
Collector -emitter voltage
Emitter-base voltage
IC Collector current
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
600
400
5
6
1
25
2.0
150
-55~150
UNIT
V
V
V
A
A
W
1
http://www.Datasheet4U.com

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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1409
CHARACTERISTICS
www.datTasj=h2ee5t4uu.cnomless otherwise specified
SYMBOL P
ARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage
IC=10mA; IB=0 400
VCEsat C ollector-emitter saturation voltage
IC=4A ;IB=0.04A
VBEsat B ase-emitter saturation voltage
IC=4A ;IB=0.04A
VECF
Emitter-collector diode forward voltage IE=4A; IB=0
ICBO Collector cut-off current
VCB=600V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=2A ; VCE=2V 600
hFE-2
DC current gain
IC=4A ; VCE=2V 100
COB Collector output capacitance
f=1MHz ; VCB=50V;IE=0
Switching times
ton T
urn-on time
tstg Storage time
tf Fall time
IB1=-IB2=0.04A
VCC=100V ,RL=25@
MIN TYP. MAX UNIT
V
2.0 V
2.5 V
3.0 V
0.5 mA
3 mA
35 pF
1 µs
8 µs
5 µs
2

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SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
2SD1409
Fig.2 outline dimensions (unindicated tolerance:±0.15 mm)
3