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SEMICONDUCTOR
2SC3320B RRooHHSS
Nell High Power Products
Silicon NPN triple diffusion planar transistor
(High voltage switching transistor)
15A/400V/150W
2SC31322300J
15.6±0.4
9.6
4.8±0.2
2.0±0.1
TO-3P(B)
FEATURES
High-speed switching
High collector to base voltage, VCBO
Satisfactory linearity of foward current
transfer ratio hFE
TO-3P package which can be installed
to the heat sink with one screw
APPLICATIONS
Switching regulator and general purpose
Ultrasonic generators
High frequency inverters
General purpose power amplifiers
Φ3.2±0,1
2
3
1.05
+0.2
-0.1
5.45±0.1
5.45±0.1
BCE
0.65
+0.2
-0.1
1.4
12 3
B
All dimensions in millimeters
C
E NPN
ABSOLUTE MAXIMUM RATINGS (TC = 25°C)
SYMBOL
PARAMETER
VCBO
Collector to base voltage
VCEO
VCEO(SUS)
Collector to emitter voltage
VEBO
Emitter to base voltage
IC Collector current
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
TC= 25°C
VALUE
500
400
400
7
15
5
150
150
-55 to 150
UNIT
V
A
W
ºC
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, Junction to case (MAX.)
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Page 1 of 3
VALUE
1.55
UNIT
°C/W
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SEMICONDUCTOR
2SC3320B RRooHHSS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (TC = 25°C)
SYMBOL
PARAMETER
CONDITIONS
VCEO
VCEO(SUS)*
Collector to emitter voltage
lCEO = 10mA
lC = 0.2A, L = 50mH
VCBO
Collector to base voltage
lCBO = 1mA
VEBO
Emitter to base voltage
lEBO = 1mA
ICBO
Collector cutoff current
VCBO = 500V, lE = 0
IEBO
Emitter cutoff current
VEBO = 7V, lC = 0
hFE Forward current transfer ratio
VCE = 5V, lC = 6A
VCE(sat)
Collector to emitter saturation voltage lC = 6A, lB = 1.2A
VBE(sat)
Base to emitter saturation voltage
lC = 6A, lB = 1.2A
ton Turn-on time
tstg Storage time
tf Fall time
lC = 7.5A, lB1 = 1.5A, lB2 = -3A
RL = 20Ω, PW = 20µs,
Duty ≤ 2%
MIN
400
500
7
10
MAX
UNIT
V
1
1
1
1.5
0.5
1.5
0.15
mA
V
µA
*VCEO(sus) Test circuit
50/60Hz
mercury relay
120W
6V
X
L 50mH
1W 15V
Y
G
Switching time test circuit
PW = 20µs
RL=20Ω
lB1 lC
lB2
lB1
lB2
0.9lC
0.1lC
lC
tON tSTG tF
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SEMICONDUCTOR
Fig.1 Collector output characteristics
5
lC =1A
3
2
2A
3A
5A
1
0.5
0.3
10A
TC = 25°C
0.1
0.05
0.03
0.03 0.05 0.1
0.5 1
Base Current lB (A)
35
2SC3320B RRooHHSS
Nell High Power Products
Fig.2 Base and collector saturation voltage
4
3
2
1
0.5
VBE(SAT)
lC = 5lB TC = 25°C
0.1
VCE(SAT)
0.05
0.03
0.02
0.01
0.05 0.1
0.3 0.5 1
3 5 10 20
Collector current, lC (A)
Fig.3 Switching time
1.5
1
tSTG
0.5
0.3
0.2 tON
0.1
0.05
TC = 25°C
VCC = 150V
lC = 5lB1 = -2.5lB2
0.03
0.5
1
2
3
5
tF
10 15 2025
Collector current, lC (A)
Fig.4 HFE-IC Characteristics
300
200 VCE = 5V
100
50
30
20
15
10 TC = 150°C 75°C 25°C
-50°C
5
3
2
1
0.05 0.1
0.3 0.5 1 2 3 5 10 15
Collector emitter voltage, VCE (V)
Fig.5 Safe operation area
30
20
15
10µs
10
5
3 PW=1ms
2
1 DC
0.5
0.3
0.2
0.1
0.05
TC = 25°C
Single Pulse
0.03
1
35
10
30 50 100 300500 1000
Collector to emitter voltage, VCE (V)
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