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Ordering number : ENA0581
2SA2201
SANYO Semiconductors
DATA SHEET
2SA2201 PNP Epitaxial Planar Silicon Transistor
High-Voltage Switching Applications
Applications
DC / DC converters, relay drivers, lamp drivers, motor drivers.
Features
Adoption of FBET, MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
Mounted on a ceramic board (250mm20.8mm)
Tc=25°C
Ratings
--80
--80
--80
--7
--2.5
--4
--500
1.3
3.5
150
--55 to +150
Unit
V
V
V
V
A
A
mA
W
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Marking : RB
Symbol
ICBO
IEBO
hFE
fT
Cob
Conditions
VCB=--70V, IE=0A
VEB=--4V, IC=0A
VCE=--5V, IC=--100mA
VCE=--10V, IC=--500mA
VCB=--10V, f=1MHz
min
200
Ratings
typ
max
Unit
--1 µA
--1 µA
400
350 MHz
23 pF
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2706EA TI IM TC-00000419 No. A0581-1/4
http://www.Datasheet4U.com

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Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
2SA2201
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=--1A, IB=--100mA
IC=--1A, IB=--100mA
IC=--10µA, IE=0A
IC=--100µA, RBE=0
IC=--1mA, RBE=
IE=--10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
--80
--80
--80
--7
Ratings
typ
--90
--0.85
40
500
28
max
--180
--1.2
Unit
mV
V
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm (typ)
7007A-004
Top View
4.5
1.6
1.5
12
0.4
0.5
1.5
3.0
3
0.4
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
IB1
IB2
VR 1k
50+
220µF
+
470µF
OUTPUT
RL
VBE=5V
VCC= --40V
IC= --10IB1=10IB2= --0.5A
0.75
Bottom View
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
--2.0
--1.6
--1.2
--0.8
--0.4
0
0
IC -- VCE
--100mA
--120mA
--140mA
--80mA
--60mA
--40mA
--20mA
IB= --5mA
--0.1 --0.2 --0.3 --0.4 --0.5
Collector-to-Emitter Voltage, VCE -- V IT11871
--2.5
VCE= --5V
--2.0
IC -- VBE
--1.5
--1.0
--0.5
0
0-
-0.2 --0.4 --0.6 --0.8 --1.0
Base-to-Emitter Voltage, VBE -- V IT11872
No. A0581-2/4

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2SA2201
hFE -- IC
1000
VCE= --5V
7
5
Ta=75°C
3
25°C
2 --25°C
100
7
--0.01
3
2
25 3
73--0.1 25
7 --1.0
Collector Current, IC -- A
VBE(sat) -- IC
25 3
IT11873
IC / IB=10
--10 Ta= --25°C
7
75°C
5 25°C
5
3
2
--0.1
7
5
3
2
--0.01
7
--0.01
23
2
100
7
5
3
2
VCE(sat) -- IC
IC / IB=10
25°C
Ta=75°C--25°C
5 7 --0.1 2 3 5 7 --1.0
Collector Current, IC -- A
Cob -- VCB
23 5
IT11874
f=1MHz
3
2
--0.01
1000
7
5
23
5 7 --0.1 2 3 5 7 --1.0
Collector Current, IC -- A
fT -- IC
23 5
IT11875
VCE= --10V
3
2
100
7
5
3
--0.01 25 3
1.6
7 --0.1 25 3
7 --1.0
Collector Current, IC -- A
PC -- Ta
23 5
IT11877
1.4
1.3
1.2
1.0
0.8
0.6
0.4
0.2
Mounted on a ceramic board (250mm 20.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT11869
10
7
--0.1 2 3 52 7 --1.0
3 52 7 --10
3 5 7 --100
Collector-to-Base Voltage, VCB -- V IT11876
ASO
7
5 ICP= --4A 100ms
10ms 1ms <10µs
3
2 IC= --2.5A
--1.0
7
5
3
2
--0.1
7
5
3 Tc=25°C
2 Single pulse
--0.01 Mounted on a ceramic board (250mm20.8mm)
--0.01 25 37 --0.1 25 37 --1.0 2 3 5 7--10 2 37 5 --100 2
Collector-to-Emitter Voltage, VCE -- V IT11878
PC -- Tc
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT11870
No. A0581-3/4

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2SA2201
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
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so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
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or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of December, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0581-4/4