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2SK2993
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2993
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Unit: mm
l Low drainsource ON resistance : RDS (ON) = 82 m(typ.)
l High forward transfer admittance : |Yfs| = 20 S (typ.)
l Low leakage current : IDSS = 100 µA (max) (VDS = 250 V)
l Enhancementmode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics S
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Not e 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Not e 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
ymbol
VDSS
VDGR
VGSS ±
ID
IDP
PD 100
EAS 423
IAR
EAR 10
Tch 150
Tstg
Rating
250
250
20
20
60
20
55~150 °
Unit
V
V
V
A
W
mJ
A
mJ
°C
C
JEDEC
JEITA
TOSHIBA 2-10S1B
Weight: 1.5 g (typ.)
Thermal Characteristics
Characteristics S
ymbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc) 1.
Rth (cha) 83.
25
3
°C / W
°C / W
Note 1: Please u se d evices o n co ndition t hat t he channel te mperature is
below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 1.79 mH, IAR = 20 A,
RG = 25
Note 3: Repetitive rating; Pulse width limited by maximum channel
temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
JEDEC
JEITA
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1 2002-01-25
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Electrical Characteristics (Ta = 25°C)
Characteristics S
ymbol
Test Condition
Gate leakage current
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs| V
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 250 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 10 A
DS = 10 V, ID = 10 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Switching time
Turnon time
Fall time
ton
tf
Turnoff time
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) Charge
toff
Qg
Qgs VDD 200 V, VGS = 10 V, ID = 20 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics S
Continuous drain reverse current
(Not e 1)
Pulse drain reverse current
(Not e 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
ymbol
Test Condition
IDR
IDRP
VDSF
trr
Qrr
IDR = 20 A, VGS = 0 V
IDR = 20 A, VGS = 0 V
dIDR / dt = 100 A / µs
Marking
2SK2993
Min Typ.
——
——
250 —
1.5 —
— 82
10 20
4000
— 300
— 1000
Max
±10
100
3.5
105
Unit
µA
µA
V
V
m
S
pF
15 —
— 35 —
ns
— 30 —
— 180 —
— 100 —
— 70 — nC
— 30
Min Typ. Max Unit
— — 20 A
— — 60
— 3.
2.0
300 —
3—
A
V
ns
µC
2 2002-01-25

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2SK2993
3 2002-01-25

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2SK2993
4 2002-01-25

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2SK2993
RG = 25
VDD = 90 V, L = 1.79 mH
EAS
=
1
2
×L
× I2
× çæ
è
BVDSS
BVDSS - VDD
÷ö
ø
5 2002-01-25