D12S60.pdf 데이터시트 (총 8 페이지) - 파일 다운로드 D12S60 데이타시트 다운로드

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Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode
Revolutionary semiconductor
material - Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on
the switching behavior
No forward recovery
SDT12S60
thinQ!SiC Schottky Diode
Product Summary
VRRM
600
Qc 30
IF 12
V
nC
A
PG-TO220-2-2.
Type
SDT12S60
Package
Ordering Code
PG-TO220-2-2. Q67040-S4470
Marking Pin 1 Pin 2
D12S60 C
A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous forward current, TC=100°C
RMS forward current, f=50Hz
IF
IFRMS
Surge non repetitive forward current, sine halfwave IFSM
TC=25°C, tp=10ms
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
tp=10µs, TC=25°C
i 2t value, TC=25°C, tp=10ms
Repetitive peak reverse voltage
IFRM
IFMAX
i2dt
VRRM
Surge peak reverse voltage
Power dissipation, TC=25°C
Operating and storage temperature
VRSM
Ptot
Tj , Tstg
Value
12
17
36
49
120
6.48
600
600
88.2
-55... +175
Unit
A
A²s
V
W
°C
Rev. 2.3
Page 1
2008-06-03
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Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SDT12S60
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
- - 1.7 K/W
- - 62
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Static Characteristics
Diode forward voltage
IF=12A, Tj=25°C
IF=12A, Tj=150°C
VF
- 1.5 1.7
- 1.7 2.1
Reverse current
VR=600V, Tj=25°C
VR=600V, Tj=150°C
IR
- 40 400
- 100 2000
Unit
V
µA
Rev. 2.3
Page 2
2008-06-03

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SDT12S60
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
AC Characteristics
Total capacitive charge
VR=400V, IF=12A, diF/dt=200A/µs, Tj=150°C
Switching time
VR=400V, IF=12A, diF/dt=200A/µs, Tj=150°C
Total capacitance
Qc - 30 -
trr - n.a. -
C
VR=1V, TC=25°C, f=1MHz
VR=300V, TC=25°C, f=1MHz
VR=600V, TC=25°C, f=1MHz
- 450 -
- 45 -
- 43 -
Unit
nC
ns
pF
Rev. 2.3
Page 3
2008-06-03

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SDT12S60
1 Power dissipation
Ptot = f (TC)
90
W
2 Diode forward current
IF= f (TC)
parameter: Tj175 °C
24
A
70
60
50
40
30
20
10
00 20 40 60 80 100 120 140 °C 180
TC
20
18
16
14
12
10
8
6
4
2
00 20 40 60 80 100 120 140 °C 180
TC
3 Typ. forward characteristic
IF = f (VF)
parameter: Tj , tp = 350 µs
24
A
150°C
125°C
100°C
16 25°C
-40°C
12
4 Typ. forward power dissipation vs.
average forward current
PF(AV)=f(IF) TC=100°C, d = tp/T
44
W
d=0.1
36
d=0.2
d=0.5
32 d=1
28
24
20
16
8
12
48
4
00 0.5 1
Rev. 2.3
1.5 V
2.5
VF
Page 4
00 2 4 6 8 10 12 A 16
IF(AV)
2008-06-03

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SDT12S60
5 Typ. reverse current vs. reverse voltage
IR=f(VR)
10 2
µA
150°C
10 1 125°C
100°C
25°C
6 Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 1 SDT12S60
K/W
10 0
10 0
10 -1
10 -1
10 -2
10 -2
10 -3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -3
100 150 200 250 300 350 400 450 500 V 600
VR
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
7 Typ. capacitance vs. reverse voltage
C= f(VR)
parameter: TC = 25 °C, f = 1 MHz
600
pF
8 Typ. C stored energy
EC=f(VR)
9
µJ
500
7
450
400 6
350 5
300
4
250
200 3
150 2
100
1
50
010 0 10 1 10 2 V 10 3
VR
00 100 200 300 400 V 600
VR
Rev. 2.3
Page 5
2008-06-03