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MCP6041/2/3/4
600 nA, Rail-to-Rail Input/Output Op Amps
Features
• Low Quiescent Current: 600 nA/amplifier (typical)
• Rail-to-Rail Input/Output
• Gain Bandwidth Product: 14 kHz (typical)
• Wide Supply Voltage Range: 1.4V to 6.0V
• Unity Gain Stable
• Available in Single, Dual, and Quad
• Chip Select (CS) with MCP6043
• Available in 5-lead and 6-lead SOT-23 Packages
• Temperature Ranges:
- Industrial: -40°C to +85°C
- Extended: -40°C to +125°C
Applications
• Toll Booth Tags
• Wearable Products
• Temperature Measurement
• Battery Powered
Design Aids
• SPICE Macro Models
•F ilterLab® Software
• MAPS (Microchip Advanced Part Selector)
• Analog Demonstration and Evaluation Boards
• Application Notes
Related Devices
• MCP6141/2/3/4: G = +10 Stable Op Amps
Typical Application
IDD
1.4V
to
6.0V
10
100 k
MCP604X
VDD
VOUT
1M
IDD = ---1--0V--DV---D/-V----V--O-1--U-0-T-----
High Side Battery Current Sensor
Description
The MC P6041/2/3/4 fa mily of operational amplifiers
(op amps) from Microchip Technology Inc. operate with
a single supply voltage as low as 1.4V, while drawing
less tha n 1 µA (m aximum) of q uiescent current p er
amplifier. These devices are also designed to su pport
rail-to-rail input and output operation. This combination
of fea tures s upports bat tery-powered and port able
applications.
The MCP6041/2/3/4 amplifiers have a gain-bandwidth
product o f 14 kHz (ty pical) and are u nity g ain st able.
These specifications make these op amps appropriate
for low frequency applications, such as battery current
monitoring and sensor conditioning.
The M CP6041/2/3/4 family ope rational am plifiers a re
offered in s ingle (M CP6041), s ingle w ith C hip Se lect
(CS) (M CP6043), d ual (MC P6042), and qua d
(MCP6044) configurations. Th e MCP6041 de vice i s
available in th e 5-l ead SOT -23 p ackage, a nd th e
MCP6043 d evice is av ailable i n th e 6 -lead SO T-23
package.
Package Types
MCP6041
PDIP, SOIC, MSOP
MCP6043
PDIP, SOIC, MSOP
NC 1
VIN– 2
VIN+ 3
VSS 4
8 NC
7 VDD
6 VOUT
5 NC
NC 1
VIN2
VIN+ 3
VSS 4
8 CS
7 VDD
6 VOUT
5 NC
MCP6041
SOT-23-5
VOUT 1
VSS 2
VIN+ 3
5 VDD
4 VIN
MCP6043
SOT-23-6
VOUT 1
VSS 2
VIN+ 3
6 VDD
5 CS
4 VIN
MCP6042
PDIP, SOIC, MSOP
MCP6044
PDIP, SOIC, TSSOP
VOUTA 1
VINA– 2
VINA+ 3
VSS 4
8 VDD VOUTA 1
7 VOUTB VINA2
6 VINB– VINA+ 3
5 VINB+ VDD 4
VINB+ 5
VINB6
VOUTB 7
14 VOUTD
13 VIND
12 VIND+
11 VSS
10 VINC+
9 VINC
8 VOUTC
2001-2013 Microchip Technology Inc.
DS21669D-page 1
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MCP6041/2/3/4
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
VDD –V SS ........................................................................7.0V
Current at Input Pins .....................................................±2 mA
Analog Inputs (VIN+, VIN–) ............. VSS – 1.0V to VDD +1 .0V
All Other Inputs and Outputs .......... VSS – 0.3V to VDD +0 .3V
Difference Input voltage ...................................... |VDD –V SS|
Output Short Circuit Current ..................................continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature.................................... –65°C to +150°C
Junction Temperature.................................................. +150°C
ESD protection on all pins (HBM; MM)  4 kV; 200V
† No tice: S tresses above t hose list ed under “ Absolute
Maximum Rat ings” may cause pe rmanent dam age t o t he
device. This is a stress rating only and functional operation of
the device at t hose or any other c onditions abo ve t hose
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
†† See Section 4.1 “Rail-to-Rail Input”
DC ELECTRICAL CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, VDD = +1.4V to +5.5V, VSS = GND, TA = 25°C, VCM =V DD/2,
VOUT VDD/2, VL =V DD/2, and RL = 1 Mto VL (refer to Figure 1-2 and Figure 1-3).
Parameters
Sym Min Typ Max Units
Conditions
Input Offset
Input Offset Voltage
Drift with Temperature
VOS
VOS/TA
VOS/TA
Power Supply Rejection
Input Bias Current and Impedance
PSRR
-3
—±
—±
70
2—
15
85
+3
mV
µV/°C
µV/°C
dB
VCM = VSS
VCM = VSS, TA= -40°C to +85°C
VCM = VSS,
TA= +85°C to +125°C
VCM = VSS
Input Bias Current
Industrial Temperature
Extended Temperature
Input Offset Current
Common Mode Input Impedance
Differential Input Impedance
Common Mode
Common-Mode Input Range
Common-Mode Rejection Ratio
Open-Loop Gain
IB
IB
IB
IOS
ZCM
ZDIFF
—1—
—1—
—1
—1
20
1200
013||6
013||6
100
5000
pA
pA
pA
pA
||pF
||pF
TA = +85°
TA = +125°
VCMR
VSS0.3
— VDD+0.3
V
CMRR
62
80
dB VDD = 5V, VCM = -0.3V to 5.3V
CMRR
60
75
dB VDD = 5V, VCM = 2.5V to 5.3V
CMRR
60
80
dB VDD = 5V, VCM = -0.3V to 2.5V
DC Open-Loop Gain (large signal)
AOL
95
115
Output
dB RL = 50 kto VL,
VOUT = 0.1V to VDD0.1V
Maximum Output Voltage Swing
VOL, VOH VSS +1 0
VDD 10
mV RL = 50 kto VL,
0.5V input overdrive
Linear Region Output Voltage Swing VOVR VSS + 100 — VDD 100 mV RL = 50 kto VL,
AOL 95 dB
Output Short Circuit Current
ISC —2—
mA VDD = 1.4V
ISC —2 0 — mA VDD = 5.5V
Power Supply
Supply Voltage
VDD
1.4
6.0
V (Note 1)
Quiescent Current per Amplifier
IQ 0.3 0.6 1.0 µA IO = 0
Note 1: All parts with date codes November 2007 and la ter have been s creened to ensure operation at VDD = 6.0V. However,
the other minimum and maximum specifications are measured at 1.4V and/or 5.5V.
DS21669D-page 2
2001-2013 Microchip Technology Inc.

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MCP6041/2/3/4
AC ELECTRICAL CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, VDD = +1.4V to +5.5V, VSS = GND, TA = 25°C, VCM = VDD/2,
VOUT VDD/2, VL =V DD/2, RL = 1 Mto VL, and CL = 60 pF (refer to Figure 1-2 and Figure 1-3).
Parameters
Sym Min Typ Max Units
Conditions
AC Response
Gain Bandwidth Product
GBWP — 14 — kHz
Slew Rate
SR — 3.0 — V/ms
Phase Margin
Noise
PM — 65 —
° G = +1 V/V
Input Voltage Noise
Input Voltage Noise Density
Input Current Noise Density
Eni —5 .0 — µVP-P f = 0.1 Hz to 10 Hz
eni — 170 — nV/Hz f = 1 kHz
ini —0 .6 — fA/Hz f = 1 kHz
MCP6043 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, VDD = +1.4V to +5.5V, VSS = GND, TA = 25°C, VCM =V DD/2,
VOUT VDD/2, VL =V DD/2, RL = 1 Mto VL, and CL = 60 pF (refer to Figure 1-2 and Figure 1-3).
Parameters
Sym Min Typ Max Units
Conditions
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
VIL
ICSL
VSS
— VSS+0.3
V
5 — pA CS = VSS
CS Logic Threshold, High
CS Input Current, High
CS Input High, GND Current
Amplifier Output Leakage, CS High
Dynamic Specifications
VIH
ICSH
ISS
IOLEAK
VDD–0.3
5
-20
20
VDD
V
pA CS = VDD
pA CS = VDD
pA CS = VDD
CS Low to Amplifier Output Turn-on Time tON
2
50 ms G = +1V/V, CS = 0.3V to
VOUT = 0.9VDD/2
CS High to Amplifier Output High-Z
Hysteresis
tOFF
10
µs G = +1V/V, CS = VDD–0.3V to
VOUT = 0.1VDD/2
VHYST
—0
.6
V VDD = 5.0V
CS VIL
VOUT
tON
High-Z
ISS -20 pA
(typical)
-0.6 µA
(typical)
VIH
tOFF
High-Z
-20 pA
(typical)
ICS 5 pA
(typical)
FIGURE 1-1:
Chip Select (CS) Timing
Diagram (MCP6043 only).
2001-2013 Microchip Technology Inc.
DS21669D-page 3

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MCP6041/2/3/4
TEMPERATURE CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, VDD = +1.4V to +5.5V, VSS = GND.
Parameters
Sym Min Typ Max Units
Conditions
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
TA -40 — +85 °C Industrial Temperature parts
TA -40 — +125 °C Extended Temperature parts
TA -40 — +125 °C (Note 1)
TA -65 — +150 °C
Thermal Resistance, 5L-SOT-23
JA — 256 — °C/W
Thermal Resistance, 6L-SOT-23
JA — 230 — °C/W
Thermal Resistance, 8L-PDIP
JA —8
5—
°C/W
Thermal Resistance, 8L-SOIC
JA — 163 — °C/W
Thermal Resistance, 8L-MSOP
JA — 206 — °C/W
Thermal Resistance, 14L-PDIP
JA —7
0—
°C/W
Thermal Resistance, 14L-SOIC
JA — 120 — °C/W
Thermal Resistance, 14L-TSSOP
JA — 100 — °C/W
Note 1: The MCP6041/2/3/4 family of Industrial Temperature op amps operates over this extended range, but with reduced
performance. In any case, the internal Junction Temperature (TJ) must not exceed the Absolute Maximum specification
of +150°C.
1.1 Test Circuits
The te st c ircuits us ed for the DC an d AC tes ts are
shown i n Figure 1-2 a nd Figure 1-3. T he bypass
capacitors are laid out according to the rules discussed
in Section 4.6 “Supply Bypass”.
VIN
RN
VDD/2 RG
VDD 0.1 µF 1 µF
MCP604X
RF
VOUT
CL RL
VL
FIGURE 1-2:
AC and DC Test Circuit for
Most Non-Inverting Gain Conditions.
VDD/2
RN
VIN RG
VDD 0.1 µF 1 µF
MCP604X
RF
VOUT
CL RL
VL
FIGURE 1-3:
AC and DC Test Circuit for
Most Inverting Gain Conditions.
DS21669D-page 4
2001-2013 Microchip Technology Inc.

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MCP6041/2/3/4
2.0 TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tes ted or guaranteed. In some gra phs or t ables, the da ta pre sented may be ou tside the sp ecified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.4V to +6.0V, VSS = GND, VCM = VDD/2, VOUT VDD/2,
VL = VDD/2, RL = 1 Mto VL, and CL = 60 pF.
10%
9%
8%
7%
1124 Samples
VDD = 1.4V and 5.5V
VCM = VSS
6%
5%
4%
3%
2%
1%
0%
-3
-2 -1 0 1
Input Offset Voltage (mV)
2
3
18%
16%
14%
12%
10%
8%
6%
4%
2%
0%
-32
245 Samples
1 Representative Lot
TA = +85°C to +125°C
VDD = 1.4V
VCM = VSS
-28 -24 -20 -16 -12 -8 -4 0
Input Offset Voltage Drift (µV/°C)
4
FIGURE 2-1:
Input Offset Voltage.
FIGURE 2-4:
Input Offset Voltage Drift
with TA = +85°C to +125°C and VDD =1 .4V.
12%
11%
10%
9%
8%
1124 Samples
TA = -40°C to +85°C
VDD = 1.4V
VCM = VSS
7%
6%
5%
4%
3%
2%
1%
0%
-10 -8 -6 -4 -2 024
68
Input Offset Voltage Drift (µV/°C)
10
FIGURE 2-2:
Input Offset Voltage Drift
with TA = -40°C to +85°C.
24%
22%
20%
18%
16%
14%
239 Samples
1 Representative Lot
TA = +85°C to +125°C
VDD = 5.5V
VCM = VSS
12%
10%
8%
6%
4%
2%
0%
-32 -28 -24 -20 -16 -12 -8 -4 0
Input Offset Voltage Drift (µV/°C)
4
FIGURE 2-5:
Input Offset Voltage Drift
with TA = +25°C to +125°C and VDD =5 .5V.
2000
1500
1000
500
0
-500
-1000
-1500
-2000
VDD = 1.4V
Representative Part
TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
Common Mode Input Voltage (V)
FIGURE 2-3:
Input Offset Voltage vs.
Common Mode Input Voltage with VDD = 1.4V.
2000
1500
1000
500
0
-500
-1000
-1500
-2000
VDD = 5.5V
Representative Part
TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
Common Mode Input Voltage (V)
FIGURE 2-6:
Input Offset Voltage vs.
Common Mode Input Voltage with VDD = 5.5V.
2001-2013 Microchip Technology Inc.
DS21669D-page 5