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FDA70N20
N-Channel UniFETTM MOSFET
200 V, 70 A, 35
Features
• RDS(on) = 35 mΩ (Max.) @ VGS = 10 V, ID = 35 A
• Low Gate Charge (Typ. 66 nC)
Low Crss (Typ. 89 pF)
• 100% Avalanche Tested
Applications
• Uninterruptible Power Supply
• AC-DC Power Supply
December 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
G
D
S
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate Above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
G
S
FDA70N20
200
70
45
280
±30
1742
70
41.7
4.5
417
3.3
-55 to +150
300
FDA70N20
0.3
0.24
40
©2005 Fairchild Semiconductor Corporation
FDA70N20 Rev C1
1
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
www.fairchildsemi.com
http://www.Datasheet4U.com

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Package Marking and Ordering Information
Part Number
FDA70N20
Top Mark
FDA70N20
Package
TO-3PN
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0V, ID = 250µA
ID = 250µA, Referenced to 25°C-
VDS = 200V, VGS = 0V
VDS = 160V, TC = 125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
200
-
--
--
--
--
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250µA3
VGS = 10V, ID = 35A
.0
--
gFS Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 40V, ID = 35A
VDS = 25V, VGS = 0V,
f = 1.0 MHz
--
--
--
--
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 100V, ID = 70A
RG = 25
VDS = 160V, ID = 70A
VGS = 10V
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4)
(Note 4)
--
--
--
--
--
--
--
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 70A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 70A
dIF/dt =100A/µs
--
--
--
--
--
NOTES:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 0.533 mH, IAS = 70 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3.ISD 70 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
Typ.
--
0.2
--
--
--
--
--
0.029
47
3050
750
89
71
235
65
39
66
19
26
--
--
--
175
4.1
Max. Unit
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
5.0
0.035
--
V
S
3970
980
130
pF
pF
pF
150 ns
480 ns
140 ns
88 ns
86 nC
-- nC
-- nC
70 A
280 A
1.4 V
-- ns
-- µC
©2005 Fairchild Semiconductor Corporation
FDA70N20 Rev C1
2
www.fairchildsemi.com

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Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top :
VGS
15.0 V
102
10.0 V
8.0 V
7.0 V
6.5 V
Bottom : 6.0 V
101
100
10-1
Notes :
1. 250µ s Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.06
0.05
0.04
0.03
0
VGS = 10V
VGS = 20V
Note : TJ = 25
25 50 75 100 125 150 175 200
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
8000
6000
4000
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2000
Crss
Note ;
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
2
150oC
25oC
-55oC
Notes :
1. VDS = 40V
2. 250µ s Pulse Test
4 6 8 10
VGS, Gate-Source Voltage [V]
12
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
102
101 150
25
Notes :
1. VGS = 0V
2. 250µ s Pulse Test
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10 VDS = 40V
VDS = 100V
8 VDS = 160V
6
4
2
Note : ID = 70A
0
0 10 20 30 40 50 60 70
QG, Total Gate Charge [nC]
©2005 Fairchild Semiconductor Corporation
FDA70N20 Rev C1
3
www.fairchildsemi.com

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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. VGS = 0 V
2. ID = 250 µ A
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
? Notes :
1. VGS = 10 V
2. ID = 35 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Safe Operating Area
103
102
101
100
10-1
10-2
100
Operation in This Area
is Limited by R DS(on)
10 µs
100 µs
1 ms
10 ms
100 ms
DC
? Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
Figure 10. Maximum Drain Current
vs. Case Temperature
80
70
60
50
40
30
20
10
0
25 50 75 100 125 150
TC, Case Temperature []
D =0.5
1 0 -1
0.2
0.1
0 .0 5
1 0 -2
0.02
0.01
sin gle pulse
PDM
t1
t2
N otes :
1 . Z θ JC(t ) = 0 .3 /W M a x .
2 . D u ty F a c to r , D = t1/t 2
3 . T JM - T C = P DM * Z θ JC(t )
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, Sq u a re W a ve Pu lse Du ra tion [se c]
101
©2005 Fairchild Semiconductor Corporation
FDA70N20 Rev C1
4
www.fairchildsemi.com

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Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
IG = const.
DUT
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VGS
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS
=
--1--
2
L IAS2
BVDSS
--------------------
BVDSS -V DD
BVDSS
IAS
VDD ID (t)
VGS
DUT
VDD
VDS (t)
t p t p Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2005 Fairchild Semiconductor Corporation
FDA70N20 Rev C1
5
www.fairchildsemi.com