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Bulletin I2117
25TTS..S SERIES
SURFACE MOUNTABLE
PHASE CONTROL SCR
Description/Features
The 25TTS..S new series of silicon controlled
rectifiers are specifically designed for medium
power switching and phase control applications.
The glass passivation technology used has reli-
able operation up to 125° C junction temperature.
VT < 1.25V @ 16A
ITSM = 250A
VR/ VD= 1200V
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identi-
cal package outlines.
Output Current in Typical Applications
Applications
Single-phase Bridge Three-phase Bridge Units
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz (140µm) copper
Aluminum IMS, RthCA = 15°C/W
Aluminum IMS with heatsink, RthCA = 5°C/W
TA = 55°C, TJ = 125°C, footprint 300mm2
Major Ratings and Characteristics
Characteristics
25TTS..S Units
3.5
8.5
16.5
5.5
13.5
25.0
A
IT(AV) Sinusoidal
waveform
IRMS
VRRM/ VDRM
ITSM
VT @ 16 A, TJ = 25°C
dv/dt
di/dt
TJ
16
25
800 and 1200
250
1.25
500
150
- 40 to 125
A
A
V
A
V
V/µs
A/µs
°C
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D2 PAK (SMD-220)

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25TTS.. S Series
Index
Voltage Ratings
Part Number
25TTS08S
25TTS12S
VRRM, maximum
peak reverse voltage
V
800
1200
Next Data Sheet
VDRM , maximum
peak direct voltage
V
800
1200
IRRM/IDRM
125°C
mA
5
Absolute Maximum Ratings
Parameters
IT(AV) Max. Average On-state Current
IRMS Max. RMS On-state Current
ITSM Max. Peak One Cycle Non-Repetitive
Surge Current
I2t Max. I2t for fusing
25TTS..S
16
25
210
250
220
Units
A
A2s
I2t Max. I2t for fusing
310
3100
A2s
VTM Max. On-state Voltage Drop
rt On-state slope resistance
VT(TO) Threshold Voltage
IRM/IDMMax.Reverse and Direct
Leakage Current
1.25 V
12.0 m
1.0 V
0.5 mA
5.0
IH Max. Holding Current
100 mA
IL Max. Latching Current
200 mA
dv/dt Max. rate of rise of off-state Voltage 500 V/µs
di/dt Max. rate of rise of turned-on Current 150
A/µs
Conditions
50% duty cycle @ TC = 94° C, sinusoidal wave form
10ms Sine pulse, rated VRRMapplied
10ms Sine pulse, no voltage reapplied
10ms Sine pulse, rated VRRMapplied
10ms Sine pulse, no voltage reapplied
t = 0.1 to 10ms, no voltage reapplied
@ 16A, TJ = 25°C
TJ = 125°C
TJ = 25 °C
TJ = 125 °C
VR = rated VRRM/ VDRM
Anode Supply = 6V, Resistive load, Initial IT=1A
Anode Supply = 6V, Resistive load
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25TTS.. S Series
Triggering
Parameters
25TTS..S Units
PGM Max. peak Gate Power
8.0 W
PG(AV) Max. average Gate Power
2.0
+ IGM Max. paek positive Gate Current 1.5 A
- VGM Max. paek negative Gate Voltage
10
V
IGT Max. required DC Gate Current
60 mA
to trigger
45
20
VGT Max. required DC Gate Voltage
to trigger
2.5 V
2.0
VGD Max. DC Gate Voltage not to trigger
IGD Max. DC Gate Current not to trigger
1.0
0.25
2.0
mA
Conditions
Anode supply = 6V, resistive load, TJ = - 10°C
Anode supply = 6V, resistive load, TJ = 25°C
Anode supply = 6V, resistive load, TJ = 125°C
Anode supply = 6V, resistive load, TJ = - 10°C
Anode supply = 6V, resistive load, TJ = 25°C
Anode supply = 6V, resistive load, TJ = 125°C
TJ = 125°C, VDRM = rated value
TJ = 125°C, VDRM = rated value
Switching
Parameters
tgt Typical turn-on time
trr Typical reverse recovery time
tq Typical turn-off time
25TTS..S
0.9
4
110
Units
µs
TJ = 25°C
TJ = 125°C
Conditions
Thermal-Mechanical Specifications
Parameters
25TTS..S Units
Conditions
TJ Max. Junction Temperature Range
Tstg Max. Storage Temperature Range
Soldering Temperature
- 40 to 125
- 40 to 125
240
°C
°C
°C
for 10 seconds (1.6mm from case)
RthJC Max. Thermal Resistance Junction
to Case
RthJA Typ. Thermal Resistance Junction
to Ambient (PCB Mount)**
wt Approximate Weight
1.1 °C/W DC operation
40 °C/W
2 (0.07) g (oz.)
T Case Style
D2 Pak (SMD-220)
**When mounted on 1" square (650mm2) PCB of FR-4 or G-10 material 4 oz (140µm) copper 40°C/W
For recommended footprint and soldering techniques refer to application note #AN-994
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25TTS.. S Series
125
25TTS.. Series
120 R t hJ C (DC) = 1.1 K/W
115
C on d uction An g le
110
105
30°
100 60°
90°
95 120°
180°
90
0 2 4 6 8 10 12 14 16 18
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
30
180°
120°
25 90°
60°
20 30°
15 RMS Limit
10
Conduction Angle
5 25TTS..
T J = 125°C
0
0 5 10 15 20
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
230
At Any Rated Load Condition And With
210
Rated
V RRM
Applied Following Surge.
Initial T J= 125°C
@ 60 Hz 0.0083 s
190 @ 50 Hz 0.0100 s
170
150
130
110 25TTS..Series
90
1 10 100
Number Of Eq ua l Amplitude Ha lf Cycle Current Pulses (N)
Fig. 6 - Maximum Non-Repetitive Surge Current
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125
25TTS.. Series
120 R thJC(DC) = 1.1 K/W
115
110 Conduction Period
105
100
95
90
85
0
30°
60°
90°
120°
180°
DC
5 10 15 20 25 30
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
35
DC
30
180°
120°
90°
25 60°
30°
20
15 RMS Limit
10 Conduction Period
25TTS..
5 T J = 125°C
0
0 5 10 15 20 25 30
Average On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics
270
Maximum Non Repetitive Surge Current
250 Versus Pulse Train Duration.
230
Initial TJ = 125°C
No Voltage Reapplied
210
Rated V Reapplied
RRM
190
170
150
130
110
90 25TTS.. Series
70
0.01
0.1 1
Pulse Train Duration (s)
10
Fig. 7 - Maximum Non-Repetitive Surge Current

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1000
Index
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25TTS.. S Series
100
10 T J= 25°C
T J= 125°C
25TTS.. Series
1
012345
Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
100
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 10 V, 65 ohms
10 tr = 1 µs, tp >= 6 µs
(b)
(a)
(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
1
VGD
0.1
0. 0 0 1
IG D
0.01
10
D = 0.50
D = 0.33
D = 0.25
D = 0.17
1 D = 0.08
(4) (3) (2) (1)
25TTS..
Frequency Limited by PG(AV)
0.1 1
Instantaneous Gate Curren t (A)
10
100
Fig. 8 - Gate Characteristics
Steady State Value
(DC Operation)
0.1
0.01
0.0001
Single Pulse
25TTS.. Series
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Fig. 9 - Thermal Impedance ZthJC Characteristics
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1