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FQP9N90C/FQPF9N90C
900V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancem ent m ode power f ield ef fect
transistors ar e prod uced using F airchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially t ailored to
minimize on-st ate resist ance, provide superior swit ching
performance, and wit hstand high energy pulse in t he
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies.
Features
• 8.0 A, 900V, RDS(on) = 1.4 @VGS = 10 V
• Low gate charge ( typical 45nC)
• Low Crss ( typical 14pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
!
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
◀▲
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
FQP9N90C FQPF9N90C
900
8.0 8.0 *
2.8 2.8 *
32 32 *
± 30
900
8.0
20.5
4.0
205 68
1.64
0.54
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP9N90C
0.61
0.5
62.5
FQPF9N90C
1.85
--
62.5
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, September 2003
http://www.Datasheet4U.com

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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
900 --
ID = 250 µA, Referenced to 25°C -- 0.99
IDSS
Zero Gate Voltage Drain Current
VDS = 900 V, VGS = 0 V
VDS = 720 V, TC = 125°C
-- --
-- --
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- --
-- --
--
--
10
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 4 A
VDS = 40 V, ID = 4 A
(Note 4)
3.0
--
--
--
1.12
9.2
5.0
1.4
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 2100 2730
-- 175 230
-- 14 18
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 450 V, ID = 9.0A,
RG = 25
-- 50 110
-- 120 250
-- 100 210
(Note 4, 5)
--
75
160
VDS = 720 V, ID = 9.0A,
-- 45 58
VGS = 10 V
-- 13
--
(Note 4, 5) --
18
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 8 A
trr Reverse Recovery Time
VGS = 0 V, IS = 9 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 21 mH, IAS = 9A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 9.0A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
--
--
--
--
--
-- 8.0
-- 32.0
-- 1.4
550 --
6.5 --
A
A
V
ns
µC
©2003 Fairchild Semiconductor Corporation
Rev. A, September 2003

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Typical Characteristics
V
Top : 15.0GVS
10.0 V
8.0 V
101
.07V
.56V
.06V
Bottom : 5.5 V
100
10-1
10-1
Notes :
1. 250μ sPulseTest
2. TC=25
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
3.0
2.5
VGS = 10V
2.0 V = 20V
GS
1.5
Note : TJ = 25
1.0
0 5 10 15 20 25 30
ID, DrainCurrent [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
3500
3000
2500
2000
1500
1000
500
0
10-1
C
iss
Ciss =Cgs +Cgd (Cds =shorted)
Coss = Cds + Cgd
Crss = Cgd
C
oss
C
rss
Notes :
1. VGS =0V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150oC
25oC
100
-55oC
10-1
2
Notes :
1. V = 50V
2. 25D0Sμ sPulse Test
468
VGS, Gate-SourceVoltage[V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
25
Notes :
1.
2.
2V5G0Sμ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 180V
DS
10 V = 450V
DS
V = 720V
DS
8
6
4
2
Note : ID=9A
0
0 10 20 30 40 50
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2003 Fairchild Semiconductor Corporation
Rev. A, September 2003