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Advanced Power
Electronics Corp.
AP92T03GH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Lower On-resistance
D
Fast Switching Characteristics
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP92T03GJ)
are available for low-profile applications.
BVDSS
RDS(ON)
ID
30V
4mΩ
75A
GD
S
TO-252(H)
GD
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
75
50
300
89
0.71
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
1.4
62.5
110
Units
V
V
A
A
A
W
W/
Units
/W
/W
/W
Data and specifications subject to change without notice
1
200901123
http://www.Datasheet4U.com

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AP92T03GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=40A
VGS=4.5V, ID=30A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=40A
Drain-Source Leakage Current
VDS=24V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=24V ,VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS= +20V, VDS=0V
ID=40A
Gate-Source Charge
VDS=20V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=4.5V
VDS=15V
Rise Time
ID=40A
Turn-off Delay Time
RG=1Ω,VGS=10V
Fall Time
RD=0.375Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
30 - - V
- 0.02 - V/
- - 4 m
- - 5.2 m
0.5 - 2 V
- 100 -
S
- - 1 uA
- - 250 uA
- - +100 nA
- 45 72 nC
- 6 - nC
- 26 - nC
- 12 - ns
- 80 - ns
- 40 - ns
- 7 - ns
- 3500 5600 pF
- 930 - pF
- 770 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=40A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 39 - ns
- 42 - nC
Notes:
1.Pulse width limited by Max junction temperature.
2.Pulse test
3.Package limitation current is 75A .
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2

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280
T C =25 o C
10V
7.0V
240
5.0V
4.5V
200
160
120
V G =3.0V
80
40
0
0.0 2.0 4.0 6.0 8.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
I D =30A
T C =25
8
6
4
2
0
02 46 8
V GS , Gate-to-Source Voltage (V)
10
Fig 3. On-Resistance v.s. Gate Voltage
40
30
20
T j =150 o C
T j =25 o C
10
0
0 0.5 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
AP92T03GH/J
240
T C =150 o C
10V
200 7.0V
5.0V
4.5V
160
120
V G =3.0V
80
40
0
0.0 2.0 4.0 6.0 8.0
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2
I D =40A
V G =10V
1.6
1.2
0.8
0.4
25 50 75 100 125
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
6.0
150
5.0
V GS =4.5V
4.0
V GS =10V
3.0
2.0
0
204 0 608 0
I D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
100
3