80NF55-06.pdf 데이터시트 (총 17 페이지) - 파일 다운로드 80NF55-06 데이타시트 다운로드

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STB80NF55-06 - STB80NF55-06-1
STP80NF55-06 - STP80NF55-06FP
N-channel 55V - 0.005- 80A - TO-220 /FP - I2PAK - D2PAK
STripFET™ II Power MOSFET
General features
Type
STB80NF55-06
STB80NF55-06-1
STP80NF55-06
STP80NF55-06FP
VDSS
55V
55V
55V
55V
RDS(on)
<0.0065
<0.0065
<0.0065
<0.0065
ID
80A (1)
80A(1)
80A (1)
60A (1)
1. Limited by package
Exceptional dv/dt capability
100% avalanche tested
Application oriented characterization
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Applications
Switching application
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D²PAK
123
I²PAK
Internal schematic diagram
Order codes
Part number
STB80NF55-06T4
STB80NF55-06-1
STP80NF55-06
STP80NF55-06FP
October 2006
Marking
B80NF55-06
B80NF55-06-1
P80NF55-06
P80NF55-06FP
Rev 8
Package
D²PAK
I²PAK
TO-220
TO-220FP
Packaging
Tape & reel
Tube
Tube
Tube
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www.st.com
17
http://www.Datasheet4U.com

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Contents
Contents
STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17

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STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP
1 Electrical
ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS
ID (1)
Gate-source voltage
Drain current (continuous) at TC = 25°C
ID (1) Drain current (continuous) at TC=100°C
IDM(3) Drain current (pulsed)
PTOT Total dissipation at TC = 25°C
Derating factor
dv/dt (4) Peak diode recovery voltage slope
EAS (5) Single pulse avalanche energy
VISO Insulation withstand voltage (DC)
TJ Operating junction temperature
Tstg Storage temperature
1. Limited by Package
2. Limited only by maximum temperature allowed
3. Pulse width limited by safe operating area
4. ) ISD 80A, di/dt 400A/µs, VDD V(BR)DSS, Tj TJMAX
5. Starting TJ = 25 oC, ID = 40A, VDD = 45V
Value
TO-220 / D²/ I²PAK TO-220FP
Unit
55
± 20
80
80
320
300
2
7
1.3
--
60 (2)
42 (2)
240 (2)
45
0.30
2500
V
V
A
A
A
W
W/°C
V/ns
J
V
-55 to 175
°C
Table 2. Thermal data
Symbol
Parameter
RthJC
RthJA
Tl
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Value
Unit
TO-220 / D²/ I²PAK TO-220FP
0.5
62.5
3.33 °C/W
°C/W
300 °C
3/17

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Electrical characteristics STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP
2 Electrical
characteristics
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 40A
Min. Typ. Max. Unit
55 V
1 µA
10 µA
±100 nA
23 4 V
0.005 0.0065
Table 4. Dynamic
Symbol
Parameter
Test conditions Min
gfs (1) Forward transconductance VDS =15V, ID = 40A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 44V, ID = 80A
VGS =10V
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
. Typ. Max. Unit
150 S
4400
1020
350
pF
pF
pF
142 189 nC
29 nC
60.5 nC
Table 5. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD= 50 V, ID= 40A,
RG=4.7Ω, VGS=10V
(see Figure 15)
Min. Typ. Max. Unit
27 ns
155 ns
125 ns
65 ns
4/17

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STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD=80A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=80A,
di/dt = 100A/µs,
VDD=35V, TJ = 150°C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
80 A
320 A
1.5 V
100 ns
0.32 µC
6.5 A
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