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STB10NK60Z, STP10NK60Z,
STP10NK60ZFP, STW10NK60Z
N-channel 600 V, 0.65 Ω typ., 10 A SuperMESH™ Power MOSFET
in I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packages
Datasheet production data
Features
TAB
Type
STB10NK60Z-1
STB10NK60ZT4
STP10NK60Z
STP10NK60ZFP
STW10NK60Z
VDSS
600 V
600 V
600 V
600 V
600 V
RDS(on)
max
ID
Pw
< 0.75 Ω 10 A 115 W
< 0.75 Ω 10 A 115 W
< 0.75 Ω 10 A 115 W
< 0.75 Ω 10 A 35 W
< 0.75 Ω 10 A 156 W
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Zener-protected
Applications
Switching applications
I2PAK
TAB
123
TAB
3
2
1
TO-220
3
1
D2PAK
3
2
1
TO-220FP
3
2
1
TO-247
Figure 1. Internal schematic diagram
Description
These devices are N-channel Zener-protected
Power MOSFET developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well-
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Table 1. Device summary
Order codes
Marking
STB10NK60Z-1
B10NK60Z
STB10NK60ZT4
B10NK60Z
STP10NK60Z
P10NK60Z
STP10NK60ZFP
P10NK60ZFP
STW10NK60Z
W10NK60Z
Package
I²PAK
D²PAK
TO-220
TO-220FP
TO-247
Packaging
Tube
Tape and reel
Tube
Tube
Tube
November 2012
This is information on a product in full production.
Doc ID 8526 Rev 11
1/24
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Contents
Contents
STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
2/24 Doc ID 8526 Rev 11

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STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID
ID
IDM (2)
PTOT
Drain-source voltage
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Derating factor
ESD
dv/dt (3)
Gate-source human body model
(R = 1,5 kΩ, C = 100 pF)
Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;TC=25 °C)
Tj Operating junction temperature
Tstg Storage temperature
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area
3. ISD < 10A, di/dt < 200A/µs, VDD =80% V(BR)DSS
I²PAK
D²PAK
TO-220
10
5.7
36
115
0.92
Value
Unit
TO-220FP TO-247
600
± 30
10(1)
5.7 (1)
36 (1)
35
0.28
V
V
10 A
5.7 A
36 A
156 W
1.25 W/°C
4 kV
4.5 V/ns
--
2500
-- V
-55 to 150
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-pcb
Thermal resistance junction-pcb max
(when mounted on minimum footprint)
Rthj-amb Thermal resistance junction-amb max
Value
I²PAK
Unit
TO-220 TO-220FP TO-247
D²PAK
1.09 3.6 0.8 °C/W
35 °C/W
62.5 50 °C/W
Doc ID 8526 Rev 11
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Electrical ratings
STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z
Table 4. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj=25 °C, ID=IAR, VDD= 50 V)
Repetitive avalanche energy
EAR (pulse width limited by Tj max)
Max value
9
300
3.5
Unit
A
mJ
mJ
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STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z
2 Electrical characteristics
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage drain
current (VGS = 0)
Gate body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on-
resistance
VDS = 600 V,
VDS = 600 V, TC=125 °C
VGS = ± 20 V
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 4.5 A
Min. Typ. Max. Unit
600 V
1 µA
50 µA
±10 µA
3 3.75 4.5 V
0.65 0.75 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Forward
transconductance
VDS =15 V, ID = 4.5 A
7.8 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
Coss
(2)
eq
Equivalent output
capacitance
VDS =25 V, f=1 MHz, VGS=0
VGS=0, VDS =0 to 480 V
-
1370
156
37
90
pF
pF
pF
pF
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=480 V, ID = 8 A
VGS =10 V (see Figure 20)
50 70 nC
10 nC
25 nC
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80%
Doc ID 8526 Rev 11
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