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December 2001
HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS
14A, 360V N-Channel,
Logic Level, Voltage Clamping IGBTs
Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = 175oC
• Ignition Energy Capable
Packages
COLLECTOR
(FLANGE)
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
Description
This N -Channel IG BT is a M OS gate d, l ogic l evel d evice
which is intended to be used as an ignition coil driver in auto-
motive ign ition circuits. U nique f eatures in clude an ac tive
voltage clamp between the collector and the gate which pro-
vides Self Clamped Inductive Switching (SCIS) capability in
ignition c ircuits. I nternal d iodes pr ovide E SD protection f or
the log ic level ga te. Both a series res istor an d a shunt
resister are provided in the gate circuit.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTP14N36G3VL
TO-220AB
14N36GVL
HGT1S14N36G3VL
TO-262AA
14N36GVL
HGT1S14N36G3VLS TO-263AB
14N36GVL
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S14N36G3VLS9A.
COLLECTOR
(FLANGE)
JEDEC TO-262AA
EMITTER
COLLECTOR
GATE
JEDEC TO-263AB
COLLECTOR
(FLANGE)
GATE
EMITTER
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
COLLECTOR
The development type number for this device is TA49021.
GATE
R1
R2
EMITTER
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCER
Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS
Collector Current Continuous at VGE = 5V, TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . IC25
at VGE = 5V, TC = +100oC . . . . . . . . . . . . . . . . . . . . . . IC100
Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Inductive Switching Current at L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . ISCIS
at L = 2.3mH, TC = + 175oC . . . . . . . . . . . . . . . . . . . . . . ISCIS
Collector to Emitter Avalanche Energy at L = 2.3mH, TC = +25oC. . . . . . . . . . . . . . . EAS
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Electrostatic Voltage at 100pF, 1500. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS
390
24
18
14
±10
17
12
332
100
0.67
-40 to +175
260
6
UNITS
V
V
A
A
V
A
A
mJ
W
W/oC
oC
oC
KV
NOTE: May be exceeded if IGEM is limited to 10mA.
©2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
http://www.Datasheet4U.com

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Specifications HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETERS
Collector-Emitter Breakdown Voltage
Gate-Emitter Plateau Voltage
Gate Charge
Collector-Emitter Clamp Breakdown
Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Gate Series Resistance
Gate-Emitter Resistance
Gate-Emitter Leakage Current
Gate-Emitter Breakdown Voltage
Current Turn-Off Time-Inductive Load
Inductive Use Test
Thermal Resistance
SYMBOL
TEST CONDITIONS
BVCER
IC = 10mA,
VGE = 0V
RGE = 1k
VGEP
QG(ON)
BVCE(CL)
BVECS
ICER
IC = 7A,
VCE = 12V
IC = 7A,
VCE = 12V
IC = 7A
RG = 1000
IC = 10mA
VCE = 250V
RGE = 1k
VCE(SAT)
IC = 7A
VGE = 4.5V
IC = 14A
VGE = 5V
VGE(TH)
R1
R2
IC = 1mA
VCE = VGE
TC = +175oC
TC = +25oC
TC = -40oC
TC = +25oC-
TC = +25oC-
TC = +175oC
TC = +25oC2
TC = +25oC-
TC = +175oC
TC = +25oC
TC = +175oC
TC = +25oC-
TC = +175oC-
TC = +25oC
TC = +25oC-
TC = +25oC
IGES
VGE = ±10V
BVGES
IGES = ±2mA
tD(OFF)I +
tF(OFF)I
ISCIS
IC = 7A, RL = 28
RG = 25, L = 550µH,
VCL = 300V, VGE = 5V,
TC = +175oC
L = 2.3mH,
VG = 5V,
TC = +175oC1
TC = +25oC1
RθJC
LIMITS
MIN TYP MAX UNITS
320 355 400
V
330 360 390
V
320 350 385
V
2.7 -
V
24 - nC
350 380 410
V
4 28
-
V
- 25 µA
- - 250 µA
-
1.25
1.45
V
-
1.15
1.6
V
1.6 2.2
V
1.7 2.9
V
1.3 1.8 2.2
V
102
±330
±12
-7
75
03
±500
±14
-
0
±1000
-
-
k
µA
V
µs
2- - A
7- - A
-- 1.5 oC/W
©2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B

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HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Typical Performance Curves
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, VCE = 10V
25
20
15
10
+175oC +25oC
5
-40oC
0
13 2
4
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
5
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = +25oC
40
10V 5.0V
30
4.5V
20 4.0V
10
0
02
3.5V
3.0V
2.5V
46 8
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2. SATURATION CHARACTERISTICS
10
35
TC = +175oC
30
VGE = 5.0V
25
VGE = 4.5V
20
VGE = 4.0V
15
10
5
0
0 1 2 3 45
VCE(SAT) , SATURATION VOLTAGE (V)
FIGURE 3. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
35
VGE = 4.5V
30
25
20
-40oC
+25oC
+175oC
15
10
5
0
0 1 2 34
5
VCE(SAT) , SATURATION VOLTAGE (V)
FIGURE 4. COLLECTOR-EMITTER CURRENT ASA FUNCTION
OF SATURATION VOLTAGE
1.35
1.25
ICE = 7A
VGE = 4.0V
2.25
ICE = 14A
2.00
VGE = 4.0V
1.15
VGE = 4.5V
1.05
VGE = 5.0V
-25 +25 +75 +125
TJ, JUNCTION TEMPERATURE (oC)
+175
FIGURE 5. SATURATION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
1.75
VGE = 4.5V
1.50
VGE = 5.0V
-25
+25
+75
+125
+175
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 6. SATURATION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B

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HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Typical Performance Curves (Continued)
20
18
16
14
12
10
8
6
4
2
0
+25
VGE = 5V
+50 +75 +100 +125 +150 +175
TC, CASE TEMPERATURE (oC)
FIGURE 7. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF CASE TEMPERATURE
1.2
ICE = 1ma
1.1
1.0
0.9
0.8
0.7
0.6
-25 +25
+75 +125
TJ, JUNCTION TEMPERATURE (oC)
+175
FIGURE 8. NORMALIZED THRESHOLD VOLTAGE AS A
FUNCTION OF JUNCTION TEMPERATURE
1E4
VECS = 20V
1E3
1E2
1E1
VCES = 250V
1E0
1E-1
+20
+60
+100
+140
TJ, JUNCTION TEMPERATURE (oC)
+180
FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF
JUNCTION TEMPERATURE
7.0
VCE = 300V, VGE = 5V
6.5 RGE = 25, L = 550µH
RL = 37, ICE = 7A
6.0
5.5
5.0
4.5
4.0
3.5
3.0
+25
+50 + 75 +100 +125 +150
TJ, JUNCTION TEMPERATURE (oC)
+175
FIGURE 10. TURN-OFF TIME AS A FUNCTION OF
JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B

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HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Typical Performance Curves (Continued)
25
+25oC
20
+175oC
15
VGE = 5V
10
5
0
24 6 81 0
L, INDUCTANCE (mH)
650
VGE = 5V
600
550
500
450
400
350
300
250
200
150
0
2
+25oC
+175oC
46
L , INDUCTANCE (mH)
8
10
FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT AS A FUNCTION OF INDUCTANCE
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
FREQUENCY = 1MHz
CIES
CRES
COES
5 10 15 20
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
25
FIGURE 12. SELF CLAMPED INDUCTIVE SWITCHING ENERGY
AS A FUNCTION OF INDUCTANCE
REF IG = 1mA, RL = 1.7, TC = +25oC
12
6
10 5
8
VCE = 12V
6
VCE = 4V
4
VCE = 8V
2
4
3
2
1
00
0 5 10 15 20 25 30
QG, GATE CHARGE (nC)
FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE 14. GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B