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2SK1093
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
– Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter,
power switch and solenoid drive
TO–220FM
2
1
3
12 3
1. Gate
2. Drain
3. Source
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
VDSS
60
V
———————————————————————————————————————————
Gate to source voltage
VGSS ±20 V
———————————————————————————————————————————
Drain current
ID 10 A
———————————————————————————————————————————
Drain peak current
ID(pulse)*4
0
A
———————————————————————————————————————————
Body to drain diode reverse drain current IDR
10 A
———————————————————————————————————————————
Channel dissipation
Pch**
20
W
———————————————————————————————————————————
Channel temperature
Tch 150 °C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
* PW 10 µs, duty cycle 1 %
** Value at TC = 25 °C
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2SK1093
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
———————————————————————————————————————————
Drain to source breakdown
V(BR)DSS 60
— V ID = 10 mA, VGS = 0
voltage
———————————————————————————————————————————
Gate to source breakdown
voltage
V(BR)GSS ±20
— V IG = ±100 µA, VDS = 0
———————————————————————————————————————————
Gate to source leak current
IGSS
— — ±10 µA VGS = ±16 V, VDS = 0
———————————————————————————————————————————
Zero gate voltage drain current IDSS
— — 250 µA VDS = 50 V, VGS = 0
———————————————————————————————————————————
Gate to source cutoff voltage VGS(off)
1.0
2.0 V ID = 1 mA, VDS = 10 V
———————————————————————————————————————————
Static drain to source on state RDS(on)
resistance
0.12 0.15
———————
ID = 5 A, VGS = 10 V *
——————————–
0.17 0.22
ID = 5 A, VGS = 4 V *
———————————————————————————————————————————
Forward transfer admittance |yfs|
3.5 6.0 — S ID = 5 A, VDS = 10 V *
———————————————————————————————————————————
Input capacitance
Ciss
— 400 — pF VDS = 10 V, VGS = 0,
————————————————————————————————
Output capacitance
Coss
— 220 — pF f = 1 MHz
————————————————————————————————
Reverse transfer capacitance Crss
— 60 — pF
———————————————————————————————————————————
Turn-on delay time
td(on)
—5
— ns ID = 5 A, VGS = 10 V,
————————————————————————————————
Rise time
tr — 55 — ns RL = 6
————————————————————————————————
Turn-off delay time
td(off)
— 140 — ns
————————————————————————————————
Fall time
tf —9 0 — ns
———————————————————————————————————————————
Body to drain diode forward
voltage
VDF
— 1.2 — V IF = 10 A, VGS = 0
———————————————————————————————————————————
Body to drain diode reverse
trr
— 125 — ns IF = 10 A, VGS = 0,
recovery time
diF/dt = 50 A/µs
———————————————————————————————————————————
* Pulse Test
See characteristic curves of 2SK970.
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2SK1093
Power vs. Temperature Derating
30
20
10
0 50 100 150
Case Temperature TC (°C)
Maximum Safe Operation Area
100
30
10
3
DC Operation (T 100 µs
1.0
Operation in this area
is limited by RDS (on)
C
= 25°C)
0.3 Ta = 25°C
0.1
0.1 0.3 1.0 3
10 30 100
Drain to Source Voltage VDS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0 D = 1
0.5
TC = 25°C
0.3 0.2
0.1
0.1 0.05
0.03
0.01
10 µ
0.02
0.01
1
Shot
Pulse
100µ
1 m 10 m
Pulse Width PW (s)
θch–c (t) = γs (t) · θch–c
θch–c = 6.25°C/W, TC = 25°C
PDM
PW
T
D =PTW
100 m
11
0
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