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2SB1012(K)
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary pair with 2SD1376(K)
Outline
TO-126 MOD
123
1. Emitter
2. Collector
3. Base
2
3
5 k
(Typ)
1 k
(Typ)
1
ID
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2SB1012(K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
C to E diode forward current
Note: 1. Value at TC = 25°C
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
ID*1
Rating
–120
–120
–7
–1.5
–3.0
20
150
–55 to +150
1.5
Unit
V
V
V
A
A
W
°C
°C
A
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO
voltage
–120
Emitter to base breakdown
voltage
V(BR)EBO
–7
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
C to E diode forward voltage
Turn on time
Turn off time
Note: 1. Pulse test
I CBO
I CEO
hFE
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
VD
t on
t off
2000
Typ
0.5
2.0
Max Unit
—V
—V
–100 µA
–10 µA
30000
–1.5 V
–2.0 V
–2.0 V
–2.5 V
3.0 V
µs
µs
Test conditions
IC = –10 mA, RBE =
IE = –50 mA, IC = 0
VCB = –120 V, IE = 0
VCE = –100 V, RBE =
VCE = –3 V, IC = –1 A*1
IC = –1 A, IB = –1 mA*1
IC = –1.5 A, IB = –1.5 mA*1
IC = –1 A, IB = –1 mA*1
IC = –1.5 A, IB = –1.5 mA*1
ID = 1.5 A*1
IC = –1 A, IB1 = –IB2 = –1 mA
2

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Maximum Collector Dissipation Curve
30
20
10
0 50 100 150
Case Temperature TC (°C)
Typical Output Characteristics
–5
–4 TC = 25°C
Pulse
–7 mA –5 mA
–3
–3 mA
–1 mA
–2
–0.5 mA
–1 IB = –0.3 mA
0 –1– 2– 3– 4– 5
Collector to emitter Voltage VCE (V)
2SB1012(K)
–3
–1.0
Area of Safe Operation
iC (peak)
IC (max)
–0.3
–0.1
–0.03 Ta = 25°C
1 Shot pulse
–0.01
–0.003
–3
–10 –30
–100 –300
Collector to emitter Voltage VCE (V)
30,000
10,000
DC Current Transfer Ratio vs.
Collector Current
VCE = –3 V
3,000
1,000
300
100
Ta = 75°C
25°C
–25°C
Pulse Test
30
–0.03
–0.1 –0.3
–1.0
Collector current IC (A)
–3
3