K3940.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 K3940 데이타시트 다운로드

No Preview Available !

2SK3940
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII)
2SK3940
Switching Regulator, DC/DC Converter Applications
Motor Drive Applications
Unit: mm
Low drain-source ON-resistance: RDS (ON) = 5.6 mΩ (typ.)
High forward transfer admittance: |Yfs| = 90 S (typ.)
Low leakage current: IDSS = 100 μA (VDS = 75 V)
Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
75
75
±20
70
280
150
444
70
15
175
55~175
V
V
V
A
W
mJ
A
mJ
°C
°C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c) 1.0 °C/W
Rth (ch-a) 50 °C/W
Note 1: Ensure that the channel temperature does not exceed 175°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 135 μH, IAR = 70 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
Note 4: The definition of maximum rating condition for both channel temperature and storage temperature range is
derived from AEC-Q101.
This transistor is an electrostatic-sensitive device. Handle with care.
1 2009-09-29

No Preview Available !

2SK3940
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“Miller”) charge
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
V (BR) DSX
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
tr
ton
VGS = ±16 V, VDS = 0 V
VDS = 75 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
ID = 10 mA, VGS = −20 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 35 A
VDS = 10 V, ID = 35 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
VGS 10 V
0V
ID = 35 A
VOUT
tf
VDD ∼− 35 V
toff Duty 1%, tw = 10 μs
Qg
Qgs VDD ∼− 60 V, VGS = 10 V, ID = 70 A
Qgd
Min Typ. Max
⎯ ⎯ ±10
⎯ ⎯ 100
75 ⎯ ⎯
45 ⎯ ⎯
3.0 5.0
5.6 7.0
45 90
12500
510
970
20
50
30
160
200
60
85
Unit
μA
μA
V
V
V
mΩ
S
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 70 A, VGS = 0 V
IDR = 70 A, VGS = 0 V,
dIDR/dt = 50 A/μs
Min Typ. Max Unit
⎯ ⎯ 70 A
⎯ ⎯ 280 A
⎯ ⎯ −1.5 V
75 ns
110
nC
Marking
TOSHIBA
K3940
Part No. (or abbreviation code)
Lot No.
Note 5
Note 5: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2 2009-09-29

No Preview Available !

100
Common source
Tc = 25°C
Pulse test
80
9
8
60
ID – VDS
10 7
40
20
6.6
6.4
6.2
6
5.8
VGS = 5.5V
0
0 0.2 0.4 0.6 0.8 1.0
Drain-source voltage VDS (V)
160
Common source
VDS = 10 V
Pulse test
120
ID – VGS
100
25 Ta = −55°C
80
40
0
0 2 4 6 8 10
Gate-source voltage VGS (V)
2SK3940
200
10
160 9
8
7.5
120
ID – VDS
7.2
7
Common source
Tc = 25°C
Pulse test
6.8
6.6
6.4
80 6.2
6
40 5.8
VGS = 5.5V
0
0 123 45
Drain-source voltage VDS (V)
1.0
0.8
0.6
0.4
0.2
0
0
VDS – VGS
Common source
Tc = 25°C
Pulse test
70
35
ID = 18 A
4 8 12 16
Gate-source voltage VGS (V)
20
1000
100
10
1
1
|Yfs| – ID
100
Ta = −55°C
25
100
Common source
VDS = 10 V
Pulse test
10 100
Drain current ID (A)
1000
10
1
1
3
RDS (ON) – ID
VGS = 10 V
Common source
Tc = 25°C
Pulse test
10 100
Drain current ID (A)
1000
2009-09-29

No Preview Available !

2SK3940
RDS (ON) Tc
16
Common source
VGS = 10 V
Pulse test
12
ID = 70A
8
35
18
4
0
80 40 0 40 80 120 160 200
Case temperature Tc (°C)
1000
Common source
Tc = 25°C
Pulse test
IDR VDS
100 10
5
3
10
1
VGS = 0 V
1
0
0.2 0.4 0.6 0.8 1.0
1.2
Drain-source voltage VDS (V)
100000
10000
Capacitance – VDS
Ciss
1000
Common source
VGS = 0 V
f = 1 MHz
Pulse test
100
0.1
1
Coss
Crss
10 100
Drain-source voltage VDS (V)
Vth Tc
6
Common source
VDS = 10 V
5
ID = 1mA
Pulse test
4
3
2
1
0
80 40 0 40 80 120 160 200
Case temperature Tc (°C)
PD Tc
160
120
80
40
0
0
40
80
120 160
200
Case temperature Tc (°C)
4
Dynamic input / output
characteristics
80
16
VDS
60
40
20
12
15V
30V
VGS
VDD = 60V
Common source
ID = 70A
Tc = 25°C
Pulse test
8
4
0
0 100 200
Total gate charge Qg (nC)
0
300
2009-09-29

No Preview Available !

rth tw
10
2SK3940
1
Duty = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
10μ
0.01
Single pulse
100μ
PDM
t
T
Duty = t/T
Rth (ch-c) = 1.0°C/W
1m
10m
100m
1
Pulse width tw (s)
10
Safe operating area
1000
500
300 ID max (pulsed) *
100 μs *
100 ID max (continuous)
1 ms *
30
10 DC operation
Tc = 25°C
5
3
1
*: Single nonrepetitive pulse
0.5 Tc = 25°C
0.3 Curves must be derated
linearly with increase in
temperature.
0.1
0.1
1
VDSS max
10
Drain-source voltage VDS (V)
100
EAS – Tch
600
500
400
300
200
100
0
25 50 75 100 125 150 175 200
Channel temperature (initial) Tch (°C)
15 V
0V
Test circuit
RG = 25 Ω
VDD = 25 V, L = 135 μH
BVDSS
IAR
VDD
VDS
Waveform
ΕAS
=
1
2
L
I2
⎜⎜⎝⎛
BVDSS
BVDSS VDD
⎟⎟⎠⎞
5 2009-09-29