TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII)
Switching Regulator, DC/DC Converter Applications
Motor Drive Applications
• Low drain-source ON-resistance: RDS (ON) = 5.6 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 90 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 75 V)
• Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Drain-gate voltage (RGS = 20 kΩ)
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
Repetitive avalanche energy (Note 3)
Storage temperature range
2. DRAIN (HEAT SINK)
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c) 1.0 °C/W
Rth (ch-a) 50 °C/W
Note 1: Ensure that the channel temperature does not exceed 175°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 135 μH, IAR = 70 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
Note 4: The definition of maximum rating condition for both channel temperature and storage temperature range is
derived from AEC-Q101.
This transistor is an electrostatic-sensitive device. Handle with care.