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Power Transistors
2SB1011
Silicon PNP triple diffusion planar type
For low-frequency output amplification
Features
High collector-base voltage (Emitter open) VCBO
High collector-emitter voltage (Base open) VCEO
Large collector power dissipation PC
Low collector-emitter saturation voltage VCE(sat)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
400
400
5
100
200
1.2
150
55 to +150
Unit
V
V
V
mA
mA
W
°C
°C
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
1: Emitter
123
2: Collector
3: Base
TO-126B-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emiter open) VCBO IC = −100 µA, IE = 0
400
V
Collector-emitter voltage (Base open) VCEO IC = −500 µA, IB = 0
400
V
Emiter-base voltage (Collector open) VEBO IE = −100 µA, IC = 0
5
V
Forward current transfer ratio
hFE VCE = −5 V, IC = −30 mA
30
Collector-emitter saturation voltage
VCE(sat) IC = −50 mA, IB = −5 mA
2.5 V
Base-emitter saturation voltage
VBE(sat) IC = −50 mA, IB = −5 mA
1.5 V
Transition frequency
fT VCB = −30 V, IE = 20 mA, f = 200 MHz
70
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −30 V, IE = 0, f = 1 MHz
9 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
SJD00036BED
1

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2SB1011
PC Ta
1.6
Without heat sink
1.2
0.8
0.4
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
120
TC=25˚C
100
–0.9mA
80 –0.8mA
–0.7mA
IB=–1mA
60 –0.6mA
–0.5mA
–0.4mA
40
–0.3mA
–0.2mA
20
–0.1mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
120
VCE=–5V
IC VBE
25˚C
100
TC=75˚C
80
60
40
–25˚C
20
0
0 0.2 0.4 0.6 0.8 1.0
Base-emitter voltage VBE (V)
100
10
VCE(sat) IC
IC/IB=10
1
0.1
TC=75˚C
25˚C
–25˚C
0.01
0.1
1
10 100
Collector current IC (mA)
hFE IC
240
VCE=–5V
200
Ta=75˚C
160
120 25˚C
–25˚C
80
40
0
0.1
1
10 100
Collector current IC (mA)
fT IE
120
VCB=–30V
f=200MHz
TC=25˚C
100
80
60
40
20
0
1 10 100 1 000
Emitter current IE (mA)
Cob VCB
30
IE=0
f=1MHz
TC=25˚C
25
20
15
10
5
0
1 10 100
Collector-base voltage VCB (V)
Sefe operation area
1 000
Single pulse
TC=25˚C
ICP
100
IC
t=100ms
t=10ms
t=1s
10
1
0.1
1
10
100
1 000
Collector-emitter voltage VCE (V)
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Rth t
104
free air
103
102
10
1
101
104
103
102
101
1
10
Time t (s)
102 103
104
2SB1011
SJD00036BED
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