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STW10NC70Z
N-CHANNEL 700V - 0.58 - 10.6A TO-247
Zener-Protected PowerMESH™III MOSFET
TYPE
VDSS
RDS(on)
ID
STW10NC70Z
700 V < 0.75 10.6 A
s TYPICAL RDS(on) = 0.58
s EXTREMELY HIGH dv/dt CAPABILITY GATE-
TO-SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
TO-247
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
IGS Gate-source Current (*)
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(1)ISD 10.6A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
(*)Limited only by maximum temperature allowed
Sep 2000
Value
700
700
±25
10.6
6.7
42
190
1.51
±50
4
3
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
mA
KV
V/ns
°C
°C
1/8

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STW10NC70Z
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Rthc-sink Thermal Resistance Case-sink Typ
Tl Maximum Lead Temperature For Soldering Purpose
0.66
30
0.1
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
10.6
380
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
700
BVDSS/TJ
Breakdown Voltage Temp.
Coefficient
ID = 1 mA, VGS = 0
0.8
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±20V
±10
°C/W
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
V/°C
µA
µA
µA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
ID(on)
On State Drain Current
Test Conditions
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 5.3 A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
3
Typ.
4
0.58
Max.
5
0.75
Unit
V
10.6 A
DYNAMIC
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID =5.3A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
13
3550
250
30
Max.
Unit
S
pF
pF
pF
2/8

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ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON (RESISTIVE LOAD)
Symbol
Parameter
td(on)
Turn-on Delay Time
tr Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 350V, ID = 5.3A
RG = 4.7VGS = 10V
(see test circuit, Figure 3)
VDD = 560V, ID = 10.6 A,
VGS = 10V
STW10NC70Z
Min.
Typ.
36
12
72
19
24
Max.
100
Unit
ns
ns
nC
nC
nC
SWITCHING OFF (INDUCTIVE LOAD)
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf Fall Time
tc Cross-over Time
Test Conditions
VDD = 560V, ID = 10.6 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
Min.
Typ.
36
36
77
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 10.6 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 10.6 A, di/dt = 100A/µs,
VDD = 50V, Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
660
8.7
26
Max.
10.6
42
1.6
Unit
A
A
V
ns
µC
A
GATE-SOURCE ZENER DIODE
Symbol
Parameter
Test Conditions
BVGSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
αT Voltage Thermal Coefficient T=25°C Note(3)
Rz Dynamic Resistance
IGS = 50 mA
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. ∆VBV = αT (25°-T) BVGSO(25°)
Min.
25
Typ.
1.3
90
Max.
Unit
V
10-4/°C
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
3/8