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MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS E6
600V CoolMOSE6 Power Transistor
IPx60R190E6
Data Sheet
Rev. 2.0, 2010-05-03
Final
Industrial & Multimarket

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600V CoolMOSE6 Power Transistor
IPP60R190E6, IPA60R190E6
IPW60R190E6
1 Description
CoolMOSis a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle
and pioneered by Infineon Technologies. CoolMOSE6 series
combines the experience of the leading SJ MOSFET supplier with
high class innovation. The offered devices provide all benefits of a
fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching
applications even more efficient, more compact, lighter, and cooler.
Features
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• JEDEC1) qualified, Pb-free plating, Halogen free
Applications
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
Please note: For MOSFET paralleling the use of ferrite beads on
the gate or separate totem poles is generally recommended.
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
Qg,typ
ID,pulse
Eoss @ 400V
Body diode di/dt
650
0.19
63
59
5.2
500
V
!
nC
A
µJ
A/µs
drain
pin 2
gate
pin 1
source
pin 3
Type / Ordering Code
IPW60R190E6
IPP60R190E6
IPA60R190E6
Package
PG-TO247
PG-TO220
PG-TO220 FullPAK
Marking
6R190E6
Related Links
IFX CoolMOS Webpage
IFX Design tools
1) J-STD20 and JESD22
Final Data Sheet
2
Rev. 2.0, 2010-05-03

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600V CoolMOSE6 Power Transistor
IPx60R190E6
Table of Contents
Table of Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Final Data Sheet
3 Rev. 2.0, 2010-05-03

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600V CoolMOSE6 Power Transistor
IPx60R190E6
Maximum ratings
2 Maximum ratings
at Tj = 25 °C, unless otherwise specified.
Table 2 Maximum ratings
Parameter
Symbol
Continuous drain current1)
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
ID
ID,pulse
EAS
EAR
IAR
dv/dt
VGS
Power dissipation for
TO-220, TO-247
Power dissipation for
TO-220 FullPAK
Operating and storage temperature
Mounting torque
TO-220, TO-247
Mounting torque
TO-220 FullPAK
Continuous diode forward current
Diode pulse current2)
Reverse diode dv/dt3)
Ptot
Ptot
Tj,Tstg
IS
IS,pulse
dv/dt
Min.
-
-
-
Values
Typ. Max.
- 20.2
12.8
- 59
- 418
--
--
--
-20 -
-30
--
0.63
3.4
50
20
30
151
- - 34
-55 -
--
150
60
50
- - 17.5
- - 59
- - 15
Maximum diode commutation
speed3)
dif/dt
1) Limited by Tj,max. Maximum duty cycle D=0.75
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical RG
500
Unit Note / Test Condition
A
A
mJ
A
V/ns
V
W
TC= 25 °C
TC= 100°C
TC=25 °C
ID=3.4 A,VDD=50 V
(see table 20)
ID=3.4 A,VDD=50 V
VDS=0...480 V
static
AC (f>1 Hz)
TC=25 °C
°C
Ncm M3 and M3.5 screws
M2.5 screws
A
A
V/ns
A/µs
TC=25 °C
TC=25 °C
VDS=0...400 V,ISD " ID,
Tj=25 °C
(see table 21)
Final Data Sheet
4 Rev. 2.0, 2010-05-03

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3 Thermal characteristics
600V CoolMOSE6 Power Transistor
IPx60R190E6
Thermal characteristics
Table 3 Thermal characteristics TO-220 (IPP60R190E6),TO-247 (IPW60R190E6)
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit Note /
Test Condition
Thermal resistance, junction - case RthJC
-
-
0.83
°C/W
Thermal resistance, junction -
RthJA
-
-
62
ambient
leaded
Soldering temperature,
Tsold
-
-
260 °C 1.6 mm (0.063 in.)
wavesoldering only allowed at
from case for 10 s
leads
Table 4 Thermal characteristics TO-220 FullPAK (IPA60R190E6)
Parameter
Symbol
Values
Min.
Typ.
Max.
Thermal resistance, junction - case RthJC
-
-
3.7
Thermal resistance, junction -
RthJA
-
-
80
ambient
Soldering temperature,
Tsold
-
-
260
wavesoldering only allowed at
leads
Unit Note /
Test Condition
°C/W
leaded
°C 1.6 mm (0.063 in.)
from case for 10 s
Final Data Sheet
5 Rev. 2.0, 2010-05-03