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PRELIMINARCCYQQ222233MN
1.0 AMP TRIAC
600 THRU 800 VOLTS
CentralTM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ223M
series types are epoxy molded silicon triacs
designed for full wave AC control applications
featuring gate triggering in all four (4) quadrants.
MARKING CODE: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (TC=25°C)
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=80°C)
YPeak One Cycle Surge (tp=10 ms)
Peak Gate Current
RAverage Gate Power Dissipation
AStorage Temperature
INJunction Temperature
Thermal Reistance
SYMBOL
VDRM
IT (RMS)
ITSM
IGM
PG (AV)
Tstg
TJ
ΘJC
CQ223M
600
1.0
10
1.0
0.1
-40 to +150
-40 to +125
10
CQ223N
800
ELIMELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
PRIDRM
VD=Rated VDRM
TYP
MAX
10
IDRM
VD=Rated VDRM, TC=125°C
200
IGT VD=12V, QUAD I, II, III, IV
10
IH VD=12V
10
VGT
VD=12V, RL=10, QUAD I, II, III
2.0
VGT
VD=12V, RL=10, QUAD IV
2.5
VTM
dv/dt
IT=1.0A
VD=2/3 VDRM, TC=125°C
5.0
2.0
UNITS
V
A
A
A
W
°C
°C
°C/W
UNITS
µA
µA
mA
mA
V
V
V
V/µs
R0 (10-June 2004)

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CentralTM
Semiconductor Corp.
PRELIMINARCCQQY222233MN
1.0 AMP TRIAC
600 THRU 800 VOLTS
SOT-223 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) MT1
2) MT2
3) GATE
4) MT2
MARKING CODE:
FULL PART NUMBER
SYMBOL
A
B
C
D
E
F
G
H
I
J
K
L
M
DIMENSIONS
INCHES
MILLIMETERS
MIN MAX MIN MAX
0° 10° 0° 10°
0.059 0.071 1.50 1.80
0.018 --- 0.45 ---
0.000 0.004 0.00 0.10
15° 15°
0.009 0.014 0.23 0.35
0.248 0.264 6.30 6.70
0.114 0.122 2.90 3.10
0.130 0.146 3.30 3.70
0.264 0.287 6.70 7.30
0.024 0.033 0.60 0.85
0.091
2.30
0.181
4.60
SOT-223 (REV: R3)
R0 (10-June 2004)