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PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom.
Test current IZT
VZ specification
Int. construction
2.7 to 100
2.7 to 80
Pulse current
Single
BZX85-Series
Vishay Semiconductors
Zener Diodes
UNIT
V
mA
FEATURES
• Silicon planar power Zener diodes
• For use in stabilizing and clipping circuits with
high power rating
• The Zener voltages are graded according to the
international E 24 standard. Replace suffix “C”
with “B” for ± 2 % tolerance
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Voltage stabilization
ORDERING INFORMATION
DEVICE NAME
BZX85-series
BZX85-series
ORDERING CODE
BZX85-series-TR
BZX85-series-TAP
TAPED UNITS PER REEL
5000 (52 mm tape on 13" reel)
5000 per ammopack
(52 mm tape)
MINIMUM ORDER
QUANTITY
25 000/box
25 000/box
PACKAGE
PACKAGE NAME
DO-41
WEIGHT
310 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
SOLDERING CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Power dissipation
Valid provided that leads at a distance of 4 mm
from case are kept at ambient temperature
Ptot
Zener current
See Table “Electrical characteristics”
Junction to ambient air
Valid provided that leads at a distance of 4 mm
from case are kept at ambient temperature
RthJA
Junction temperature
Tj
Storage temperature range
Tstg
VALUE
1300
110
175
-55 to +175
UNIT
mW
K/W
°C
°C
Rev. 2.2, 02-Jun-14
1 Document Number: 85607
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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BZX85-Series
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER
ZENER VOLTAGE
RANGE (1)
TEST
CURRENT
VZ at IZT1
V
IZT1
IZT2
mA
REVERSE
LAEKAGE
CURRENT
IR at VR
μA V
DYNAMIC
RESISTANCE (3)
ZZ at IZT1 ZZK at IZT2
MIN. NOM. MAX.
MAX.
MAX.
BZX85C2V7
2.5 2.7 2.9 80
1 < 150 1
< 20
< 400
BZX85C3V0
2.8 3.0 3.2 80
1 < 100 1
< 20
< 400
BZX85C3V3
3.1 3.3 3.5 80
1 < 40 1
< 20
< 400
BZX85C3V6
3.4 3.6 3.8 60
1 < 20 1
< 20
< 500
BZX85C3V9
3.7 3.9 4.1 60
1 < 10 1
< 15
< 500
BZX85C4V3
4 4.3 4.6 50
1 <3 1
< 13
< 500
BZX85C4V7
4.4 4.7 5 45 1 < 3 1
< 13
< 600
BZX85C5V1
4.8 5.1 5.4 45
1 < 1 1.5
< 10
< 500
BZX85C5V6
5.2 5.6 6 45 1 < 1 2 < 7 < 400
BZX85C6V2
5.8 6.2 6.6 35
1 <1 3
<4
< 300
BZX85C6V8
6.4 6.8 7.2 35
1 <1 4
< 3.5
< 300
BZX85C7V5
7 7.5 7.9 35 0.5 < 1 4.5
<3
< 200
BZX85C8V2
7.7 8.2 8.7 25 0.5 < 1 6.2
<5
< 200
BZX85C9V1
8.5 9.1 9.6 25 0.5 < 1 6.8
<5
< 200
BZX85C10
9.4 10 10.6 25 0.5 < 0.5 7.5
<7
< 200
BZX85C11
10.4 11 11.6 20 0.5 < 0.5 8.2
<8
< 300
BZX85C12
11.4 12 12.7 20 0.5 < 0.5 9.1
<9
< 350
BZX85C13
12.4 13 14.1 20 0.5 < 0.5 10
< 10
< 400
BZX85C15
13.8 15 15.6 15 0.5 < 0.5 11
< 15
< 500
BZX85C16
15.3 16 17.1 15 0.5 < 0.5 12
< 15
< 500
BZX85C18
16.8 18 19.1 15 0.5 < 0.5 13
< 20
< 500
BZX85C20
18.8 20 21.2 10 0.5 < 0.5 15
< 24
< 600
BZX85C22
20.8 22 23.3 10 0.5 < 0.5 16
< 25
< 600
BZX85C24
22.8 24 25.6 10 0.5 < 0.5 18
< 25
< 600
BZX85C27
25.1 27 28.9 8 0.25 < 0.5 20
< 30
< 750
BZX85C30
28 30 32
8 0.25 < 0.5 22
< 30
< 1000
BZX85C33
31 33 35
8 0.25 < 0.5 24
< 35
< 1000
BZX85C36
34 36 38
8 0.25 < 0.5 27
< 40
< 1000
BZX85C39
37 39 41
6 0.25 < 0.5 30
< 50
< 1000
BZX85C43
40 43 46
6 0.25 < 0.5 33
< 50
< 1000
BZX85C47
44 47 50
4 0.25 < 0.5 36
< 90
< 1500
BZX85C51
48 51 54
4 0.25 < 0.5 39
< 115
< 1500
BZX85C56
52 56 60
4 0.25 < 0.5 43
< 120
< 2000
BZX85C62
58 62 66
4 0.25 < 0.5 47
< 125
< 2000
BZX85C68
64 68 72
4 0.25 < 0.5 51
< 130
< 2000
BZX85C75
70 75 80
4 0.25 < 0.5 56
< 135
< 2000
BZX85C82
77 82 87 2.7 0.25 < 0.5 62
< 200
< 3000
BZX85C91
85 91 96 2.7 0.25 < 0.5 68
< 250
< 3000
BZX85C100
96 100 106 2.7 0.25 < 0.5 75
< 350
< 3000
Notes
(1) Measured with pulses tp = 5 ms
(2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case
(3) Measured with f = 1 kHz
TEMPERATURE
COEFFICIENT
OF ZENER
VOLTAGE
VZ at IZT1
%/°C
MIN. MAX.
- 0.08 - 0.05
- 0.08 - 0.05
- 0.08 - 0.05
- 0.08 - 0.05
- 0.07 - 0.02
- 0.05 0.01
- 0.03 0.04
- 0.01 0.04
0 0.045
0.01 0.055
0.015 0.06
0.02 0.065
0.03 0.07
0.035 0.075
0.04 0.08
0.045 0.08
0.045 0.085
0.05 0.085
0.055 0.09
0.055 0.09
0.06 0.09
0.06 0.09
0.06 0.095
0.06 0.095
0.06 0.095
0.06 0.095
0.06 0.095
0.06 0.095
0.06 0.095
0.06 0.095
0.06 0.095
0.06 0.095
0.06 0.095
0.06 0.095
0.055 0.095
0.055 0.095
0.055 0.095
0.055 0.095
0.055 0.095
ADMISSIBLE
ZENER
CURRENT (2)
IZ
mA
360
330
300
290
280
250
215
200
190
170
155
140
130
120
105
97
88
79
71
66
62
56
52
47
41
36
33
30
28
26
23
21
19
16
15
14
12
10
9.4
Rev. 2.2, 02-Jun-14
2 Document Number: 85607
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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www.vishay.com
BZX85-Series
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER
ZENER VOLTAGE
RANGE (1)
TEST
CURRENT
VZ at IZT1
V
IZT1
IZT2
mA
REVERSE
LAEKAGE
CURRENT
IR at VR
μA V
DYNAMIC
RESISTANCE (3)
ZZ at IZT1 ZZK at IZT2
MIN. NOM. MAX.
MAX.
MAX.
BZX85B2V7
2.64 2.7 2.76 80
1 < 150 1
< 20
< 400
BZX85B3V0
2.94 3 3.06 80
1 < 100 1
< 20
< 400
BZX85B3V3
2.24 3.3 3.36 80
1 < 40 1
< 20
< 400
BZX85B3V6
3.53 3.6 3.67 60
1 < 20 1
< 20
< 500
BZX85B3V9
3.82 3.9 3.98 60
1 < 10 1
< 15
< 500
BZX85B4V3
4.21 4.3 4.39 50
1 <3 1
< 13
< 500
BZX85B4V7
4.61 4.7 4.79 45
1 <3 1
< 13
< 600
BZX85B5V1
5 5.1 5.2 45
1 < 1 1.5
< 10
< 500
BZX85B5V6
5.49 5.6 5.71 45
1 <1 2
<7
< 400
BZX85B6V2
6.08 6.2 6.32 35
1 <1 3
<4
< 300
BZX85B6V8
6.66 6.8 6.94 35
1 <1 4
< 3.5
< 300
BZX85B7V5
7.35 7.5 7.65 35 0.5 < 1 4.5
<3
< 200
BZX85B8V2
8.04 8.2 8.36 25 0.5 < 1 6.2
<5
< 200
BZX85B9V1
8.92 9.1 9.28 25 0.5 < 1 6.8
<5
< 200
BZX85B10
9.8 10 10.2 25 0.5 < 0.5 7.5
<7
< 200
BZX85B11
10.8 11 11.2 20 0.5 < 0.5 8.2
<8
< 300
BZX85B12
11.8 12 12.2 20 0.5 < 0.5 9.1
<9
< 350
BZX85B13
12.7 13 13.3 20 0.5 < 0.5 10
< 10
< 400
BZX85B15
14.7 15 15.3 15 0.5 < 0.5 11
< 15
< 500
BZX85B16
15.7 16 16.3 15 0.5 < 0.5 12
< 15
< 500
BZX85B18
17.6 18 18.4 15 0.5 < 0.5 13
< 20
< 500
BZX85B20
19.6 20 20.4 10 0.5 < 0.5 15
< 24
< 600
BZX85B22
21.6 22 22.4 10 0.5 < 0.5 16
< 25
< 600
BZX85B24
23.5 24 24.5 10 0.5 < 0.5 18
< 25
< 600
BZX85B27
26.5 27 27.5 8 0.25 < 0.5 20
< 30
< 750
BZX85B30
29.4 30 30.6 8 0.25 < 0.5 22
< 30
< 1000
BZX85B33
32.3 33 33.7 8 0.25 < 0.5 24
< 35
< 1000
BZX85B36
35.3 36 36.7 8 0.25 < 0.5 27
< 40
< 1000
BZX85B39
38.2 39 39.8 6 0.25 < 0.5 30
< 50
< 1000
BZX85B43
42.1 43 43.9 6 0.25 < 0.5 33
< 50
< 1000
BZX85B47
46.1 47 47.9 4 0.25 < 0.5 36
< 90
< 1500
BZX85B51
50 51 52
4 0.25 < 0.5 39
< 115
< 1500
BZX85B56
54.9 56 57.1 4 0.25 < 0.5 43
< 120
< 2000
BZX85B62
60.8 62 63.2 4 0.25 < 0.5 47
< 125
< 2000
BZX85B68
66.6 68 69.4 4 0.25 < 0.5 51
< 130
< 2000
BZX85B75
73.5 75 76.5 4 0.25 < 0.5 56
< 135
< 2000
BZX85B82
80.4 82 83.6 2.7 0.25 < 0.5 62
< 200
< 3000
BZX85B91
89.2 91 92.8 2.7 0.25 < 0.5 68
< 250
< 3000
BZX85B100
98 100 102 2.7 0.25 < 0.5 75
< 350
< 3000
Notes
(1) Measured with pulses tp = 5 ms
(2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case
(3) Measured with f = 1 kHz
TEMPERATURE
COEFFICIENT
OF ZENER
VOLTAGE
VZ at IZT1
%/°C
MIN. MAX.
- 0.08 - 0.05
- 0.08 - 0.05
- 0.08 - 0.05
- 0.08 - 0.05
- 0.07 - 0.02
- 0.05 0.01
- 0.03 0.04
- 0.01 0.04
0 0.045
0.01 0.055
0.015 0.06
0.02 0.065
0.03 0.07
0.035 0.075
0.04 0.08
0.045 0.08
0.045 0.085
0.05 0.085
0.055 0.09
0.055 0.09
0.06 0.09
0.06 0.09
0.06 0.095
0.06 0.095
0.06 0.095
0.06 0.095
0.06 0.095
0.06 0.095
0.06 0.095
0.06 0.095
0.06 0.095
0.06 0.095
0.06 0.095
0.06 0.095
0.055 0.095
0.055 0.095
0.055 0.095
0.055 0.095
0.055 0.095
ADMISSIBLE
ZENER
CURRENT (2)
IZ
mA
360
330
300
290
280
250
215
200
190
170
155
140
130
120
105
97
88
79
71
66
62
56
52
47
41
36
33
30
28
26
23
21
19
16
15
14
12
10
9.4
Rev. 2.2, 02-Jun-14
3 Document Number: 85607
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
BZX85-Series
Vishay Semiconductors
°C/W
103
5
4
3
rthA
2
102
5 0.5
4
3
2 0.2
10
5
4
3
2
1
0.1
0.05
0.02
0.01
10-5 10-4
10-3
tP v = t__P_
T
T
10-2 10-1
tP
PI
1 10 s
18458
Fig. 1 - Pulse Thermal Resistance vs. Pulse Duration
°C/W
200
R
thA
100 max.
typ.
0
0 10 20 30 mm
lead length 18461
Fig. 4 - Thermal Resistance vs. Lead Length
Ω
103
7
5
4
rzj 3
2
102
7
5
4
3
2
56
43
10
0.1 2 3 4 5
1
2 3 4 5 10 mA
IZ 18459
Fig. 2 - Dynamic Resistance vs. Zener Current
W
2
Ptot
1
0
0
100
Tamb
200 °C
18462
Fig. 5 - Admissible Power Dissipation vs. Ambient Temperature
Ω
100
7
5
4
rzj 3
2
10
7
5
4
3
2
1
1
43
36
30
24
22
18
2 3 45
10 2 3 4 5 100 mA
IZ 18460
Fig. 3 - Dynamic Resistance vs. Zener Current
Ω
103
5
4
3
rzj
2
102 5V1
5
4 18
3
2
12
4V3
10
5
4
3
2
1
1
6V2 10
7V5
2 3 4 5 7 10 2 3 4 5 7 100 mA
IZ 18463
Fig. 6 - Dynamic Resistance vs. Zener Current
Rev. 2.2, 02-Jun-14
4 Document Number: 85607
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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www.vishay.com
BZX85-Series
Vishay Semiconductors
mA
240
200
IZ 160
120
80
3V9 4V7
5V6
6V8
8V2
10
Tj = 25 °C
12
40
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 V
V 18456
Z
Fig. 7 - Breakdown Characteristics
mA
60
50
IZ 40
30
20
15 18
22
Tj = 25 °C
27
33
39
47
10
0
0 5 10 15 20 25 30 35 40 45 50 V
VZ 18457
Fig. 8 - Breakdown Characteristics
PACKAGE DIMENSIONS in millimeters (inches): DO-41
Cathode identification
26 (1.024) min.
4.1 (0.161) max.
26 (1.024) min.
94 9368
Rev. 2.2, 02-Jun-14
5 Document Number: 85607
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000