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SavantIC Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
www.dat·aWshiethet4TuO.co-2m20 package
·High DC current gain
·DARLINGTON
Product Specification
2SD1025
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
IC
Emitter-base voltage
Collector current
Open collector
ICM Collector current-Peak
IB Base current
IBM Base current-Peak
PT Total power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R8j-C
Thermal resistance junction to case
VALUE
200
200
7
8
12
0.5
1.0
50
150
-55~150
UNIT
V
V
V
A
A
A
A
W
VALUE
2.5
UNIT
/W

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SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=10mA
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=10mA
ICBO Collector cut-off current
VCB=200V ;IE=0
ICEO Collector cut-off current
VCE=200V; IB=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE DC current gain
IC=5A ; VCE=3V
fT Transition frequency
IC=0.8A ; VCE=10V
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=5A
IB1=- IB2=10mA
RL=5C; VBB2=4V
Product Specification
2SD1025
MIN TYP. MAX UNIT
200 V
1.5 V
2.0 V
0.1 mA
0.1 mA
5.0 mA
1500
30000
20 MHz
2.0 µs
8.0 µs
5.0 µs
2

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SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
2SD1025
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3