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Ordering number:EN2535
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1606/2SC4159
High-Voltage Switching, AF 100W
Driver Applications
Applications
· High-voltage switching, AF power amplifier, 100W
output predrivers.
Features
· Micaless package facilitating mounting.
Package Dimensions
unit:mm
2041
[2SA1606/2SC4159]
( ) : 2SA1606
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
ICBO
IEBO
VCB=(–)120V, IE=0
VEB=(–)4V, IC=0
DC Current Gain
hFE VCE=(–)5V, IC=(–)300mA
Gain-Bandwidth Product
Output Capacitance
fT VCE=(–)10V, IC=(–)50mA
Cob VCB=(–)10V, f=1MHz
Base-to-Emitter Voltage
VBE
VCE=(–)5V, IC=(–)10mA
* : The 2SA1606/2SC4159 are classified by 300mA hFE as follows :
60 D 120 100 E 200
E : Emitter
C : Collector
B : Base
SANYO : TO-220ML
Ratings
(–)180
(–)160
(–)6
(–)1.5
(–)3
15
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ max
Unit
(–)10 µA
(–)10 µA
60* 200*
100 MHz
(30)23
pF
(–)1.5 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82098HA (KT)/5277TA No.2535-1/4

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Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
Turn-ON Time
Fall Time
Storage Time
Switching Time Test Circuit
2SA1606/2SC4159
Symbol
Conditions
VCE(sat) IC=(–)500mA, IB=(–)50mA
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tf
tstg
IC=(–)1mA, IE=0
IC=(–)1mA, RBE=
IE=(–)1mA, IC=0
See specified test circuit.
See specified test circuit.
See specified test circuit.
See specified test circuit.
See specified test circuit.
See specified test circuit.
Ratings
min typ
(–0.5)
0.3
(–)180
(–)160
(–)6
(0.29)
0.15
(0.19)
0.48
(0.48)
0.81
max
Unit
V
V
V
V
V
µs
µs
µs
µs
µs
µs
10IB1=–10IB2=IC=0.5A
PW=20µs
For PNP, the polarity is reversed.
Unit (resistance : , capacitance : F)
No.2535-2/4

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2SA1606/2SC4159
No.2535-3/4