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TK12A60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)
TK12A60D
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.45 (typ.)
High forward transfer admittance: Yfs= 7.5 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
600
±30
12
48
45
359
12
4.5
150
55 to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
Ф3.2 ± 0.2 10 ± 0.3
A
Unit: mm
2.7 ± 0.2
1.14 ± 0.15
0.69 ± 0.15
Ф0.2 M A
2.54 2.54
123
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Internal Connection
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max
2.78
62.5
Unit
°C/W
°C/W
2
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.36 mH, RG = 25 Ω, IAR = 12 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
3
Start of commercial production
2009-01
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Electrical Characteristics (Ta = 25°C)
TK12A60D
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±30 V, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 6 A
VDS = 10 V, ID = 6 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
⎯ ⎯ ±1
⎯ ⎯ 10
600
2.0 4.0
0.45 0.55
1.9 7.5
1800
9
190
μA
μA
V
V
Ω
S
pF
tr
10 V
VGS
0V
ID = 6 A VOUT
40
ton
50 Ω
RL = 33 Ω
80
ns
tf 15
VDD 200 V
toff Duty 1%, tw = 10 μs
110
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 12 A
Qgd
38
24 nC
14
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 12 A, VGS = 0 V
IDR = 12 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯ ⎯ 12 A
⎯ ⎯ 48 A
⎯ ⎯ −1.7 V
1200
ns
13 ⎯ μC
Marking
K12A60D
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Part No.
(or abbreviation code)
Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2011/65/EU of the European Parliament and
of the Council of 8 June 2011 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
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10
Common source
Tc = 25°C
Pulse Test
8
ID – VDS
10 7
8
6
4
6.5
6.3
6
5.6
2
VGS = 5.4 V
0
0 2 4 6 8 10
Drain-source voltage VDS (V)
TK12A60D
ID – VDS
20
10 7.5
Common source
7 Tc = 25°C
8 Pulse Test
16
6.7
12
6.5
8
6
4 VGS = 5.6 V
0
0 10 20 30 40 50
Drain-source voltage VDS (V)
24
Common source
VDS = 10 V
Pulse Test
18
ID – VGS
12
100
6 25 Tc = −55°C
0
0 2 4 6 8 10
Gate-source voltage VGS (V)
VDS – VGS
10
Common source
Tc = 25°C
Pulse Test
8
6 ID = 12 A
4
6
23
0
0 4 8 12 16 20
Gate-source voltage VGS (V)
100 Common source
VDS = 10 V
Pulse Test
|Yfs| – ID
10 Tc = −55°C
25
100
1
10
Common source
Tc = 25°C
Pulse Test
RDS (ON) – ID
1
VGS = 10 V
0.1
0.1
1 10
Drain current ID (A)
100
0.1
0.1
1 10
Drain current ID (A)
100
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RDS (ON) Tc
2
Common source
VGS = 10 V
Pulse Test
1.6
1.2
12
6
0.8
ID = 3 A
0.4
0
80
40 0 40 80 120
Case temperature Tc (°C)
160
TK12A60D
100 Common source
Tc = 25°C
Pulse Test
IDR VDS
10
1
0.1
0
10
5
3
1
VGS = 0 V
-0.3 -0.6 -0.9 -1.2
Drain-source voltage VDS (V)
-1.5
10000
1000
100
Capacitance – VDS
Ciss
Coss
10
Common source
VGS = 0 V
f =1MHz
Tc = 25°C
1
0.1
1
Crss
10 100
Drain-source voltage VDS (V)
Vth Tc
5 Common source
VDS = 10 V
ID = 1mA
4 Pulse Test
3
2
1
0
80
40 0
40 80 120
Case temperature Tc (°C)
160
80
60
40
20
0
0
PD Tc
40 80 120
Case temperature Tc (°C)
160
Dynamic input / output
characteristics
500 20
400
300
200
100
0
0
VDS
200V
VDD = 100 V
400V
16
12
VGS
Common source
ID = 12 A
Tc = 25°C
Pulse Test
8
4
10 20 30 40 50
Total gate charge Qg (nC)
0
60
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TK12A60D
rth – tw
10
1 Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
10μ
100μ
SINGLE PULSE
PDM
t
T
Duty = t/T
Rth (ch-c) = 2.78°C/W
1m
10m
100m
1
10
Pulse width tw (s)
SAFE OPERATING AREA
100
ID max (pulse) *
ID max (continuous)
10
100 μs *
1 ms *
1 DC operation
Tc = 25°C
0.1
0.01 * Single pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.001
1
10
VDSS max
100
Drain-source voltage VDS (V)
1000
EAS – Tch
500
400
300
200
100
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 90 V, L = 4.36 mH
Wave form
ΕAS
=
1
2
L
I2
⎜⎜⎝⎛
BVDSS
BVDSS VDD
⎟⎟⎠⎞
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