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DATASHEET
ISL70419SEH
Radiation Hardened 36V Quad Precision Low Power Operational Amplifier With
Enhanced SET Performance
FN8653
Rev.2.00
Oct 15, 2018
The ISL70419SEH contains four very high precision amplifiers
featuring the perfect combination of low noise vs power
consumption. Low offset voltage, low IBIAS current, and low
temperature drift make it the ideal choice for applications
requiring both high DC accuracy and AC performance. The
combination of high precision, low noise, low power, and small
footprint provides the user with outstanding value and
flexibility relative to similar competitive parts.
Applications for these amplifiers include precision active
filters, medical and analytical instrumentation, precision
power supply controls, and industrial controls.
The ISL70419SEH is offered in a 14 Ld hermetic ceramic
flatpack package. The device is offered in an industry standard
pin configuration and operates across the extended
temperature range from -55°C to +125°C.
Applications
• Precision instrumentation
• Spectral analysis equipment
• Active filter blocks
• Thermocouples and RTD reference buffers
• Data acquisition
• Power supply control
Features
• Electrically screened to DLA SMD# 5962-14226
• Low input offset voltage. . . . . . . . . . . . . . . . . . . ±110µV, Max.
• Superb offset temperature coefficient. . . . . . . 1µV/°C, Max.
• Input bias current . . . . . . . . . . . . . . . . . . . . . . . . . ±15nA, Max.
• Input bias current TC . . . . . . . . . . . . . . . . . . . . ±5pA/°C, Max.
• Low current consumption . . . . . . . . . . . . . . . . . . . . . . . 440µA
• Voltage noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8nV/Hz
• Wide supply range . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 36V
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• Radiation environment
- SEB LETTH (VS = ±18V) . . . . . . . . . . . . . 86.4 MeV•cm2/mg
- SET recovery time . . . . . . . . . . 10µs at 60 MeV•cm2/m
- SEL immune (SOI process)
- Total dose HDR (50-300rad(Si)/s) . . . . . . . . . . 300krad(Si)
- Total dose LDR (10mrad(Si)/s) . . . . . . . . . . . 100krad(Si) *
* Product capability established by initial characterization. The
EH version is acceptance tested on a wafer-by-wafer basis to
50krad(Si) at low dose rate.
Related Literature
For a full list of related documents, visit our website:
ISL70419SEH product page
C1
8.2nF
V+
-
VIN R1 R2
1.84k 4.93k
ISL70419SEH
+
3.3nF C2
V-
OUTPUT
SALLEN-KEY LOW PASS FILTER (fC = 10kHz)
FIGURE 1. TYPICAL APPLICATION
10
9 CH2 = VOUT - B
8 VS = ±15V
7
6
5
4
3
2
1
0
-8 -6 -4 -2 0 2
SET EXTREME DEVIATION(V)
4
FIGURE 2. SET DEVIATION vs DURATION FOR LET = 60 MeV•cm2/mg
FN8653 Rev.2.00
Oct 15, 2018
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ISL70419SEH
Ordering Information
ORDERING/SMD NUMBER
(Note 2)
PART NUMBER
(Note 1)
TEMPERATURE RANGE
(°C)
PACKAGE
(RoHS Compliant)
PKG.
DWG. #
5962F1422601VXC
ISL70419SEHVF
-55 to +125
14 Ld Flatpack with EPAD K14.C
N/A
ISL70419SEHF/PROTO (Note 3)
-55 to +125
14 Ld Flatpack with EPAD K14.C
5962F1422601V9AX
ISL70419SEHVX
-55 to +125
DIE
N/A
ISL70419SEHX/SAMPLE (Note 3)
-55 to +125
DIE
N/A
ISL70419SEHEV1Z (Note 4)
Evaluation Board
NOTES:
1. These Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both SnPb
and Pb-free soldering operations.
2. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed must be
used when ordering.
3. The /PROTO and /SAMPLE are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect (SEE) immunity. These parts are intended for
engineering evaluation purposes only. The /PROTO parts meet the electrical limits and conditions across temperature specified in the DLA SMD and
are in the same form and fit as the qualified device. The /SAMPLE parts are capable of meeting the electrical limits and conditions specified in the
DLA SMD at +25°C only. The /SAMPLE parts do not receive 100% screening across temperature to the DLA SMD electrical limits. These part types
do not come with a Certificate of Conformance because they are not DLA qualified devices.
4. Evaluation boards use the /PROTO parts and /PROTO parts are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect (SEE) immunity.
FN8653 Rev.2.00
Oct 15, 2018
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ISL70419SEH
Pin Configuration
OUT_A
-IN_A
+IN_A
V+
+IN_B
-IN_B
OUT_B
Pin Descriptions
PIN NUMBER
1
2
3
4
5
6
7
8
9
10
11
12
13
14
500Ω
IN-
500Ω
PIN NAME
OUT_A
-IN_A
+IN_A
V+
+IN_B
-IN_B
OUT_B
OUT_C
-IN_C
+IN_C
V-
+IN_D
-IN_D
OUT_D
EPAD
V+
IN+
CIRCUIT 1
V-
14 LD FLATPACK
TOP VIEW
1 14
2A
D 13
-+ +-
3 12
4 11
5 10
-+ +-
6B
C9
78
OUT_D
-IN_D
+IN_D
V-
+IN_C
-IN_C
OUT_C
EQUIVALENT CIRCUIT
Circuit 2
Circuit 1
Circuit 1
Circuit 3
Circuit 1
Circuit 1
Circuit 2
Circuit 2
Circuit 1
Circuit 1
Circuit 3
Circuit 1
Circuit 1
Circuit 2
N/A
V+
OUT
V-
CIRCUIT 2
DESCRIPTION
Amplifier A output
Amplifier A inverting input
Amplifier A non-inverting input
Positive power supply
Amplifier B non-inverting input
Amplifier B inverting input
Amplifier B output
Amplifier C output
Amplifier C inverting input
Amplifier C non-inverting input
Negative power supply
Amplifier D non-inverting input
Amplifier D inverting input
Amplifier D output
EPAD under Package (unbiased, tied to package lid)
V+
CAPACITIVELY
COUPLED
ESD CLAMP
V-
CIRCUIT 3
FN8653 Rev.2.00
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ISL70419SEH
Absolute Maximum Ratings
Maximum Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42V
Maximum Supply Voltage (LET = 86.4 MeVcm2/mg). . . . . . . . . . . . . 36V
Maximum Differential Input Current . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Maximum Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Min/Max Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . V- - 0.5V to V+ + 0.5V
Max/Min Input current for Input Voltage >V+ or <V-. . . . . . . . . . . . . . . . ±20mA
Output Short-Circuit Duration (1 output at a time). . . . . . . . . . . . . . . . Indefinite
ESD Rating
Human Body Model (Tested per MIL-PRF-883 3015.7). . . . . . . . . . . 2kV
Machine Model (Tested per EIA/JESD22-A115-A) . . . . . . . . . . . . . . 200V
Charged Device Model (Tested per JESD22-C101D) . . . . . . . . . . . . 750V
Thermal Information
Thermal Resistance (Typical)
JA (°C/W) JC (°C/W)
14 Ld Flatpack (Notes 5, 6). . . . . . . . . . . . .
35
8
Maximum Storage Temperature Range . . . . . . . . . . . . . .-65°C to +150°C
Maximum Junction Temperature (TJMAX) . . . . . . . . . . . . . . . . . . . . .+150°C
Recommended Operating Conditions
Ambient Operating Temperature Range . . . . . . . . . . . . . .-55°C to +125°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . . . . .+150°C
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V (±5V) to 30V (±15V)
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions can adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
5. JA is measured in free air with the component mounted on a high-effective thermal conductivity test board with “direct attach” features. See TB379.
6. For JC, the “case temp” location is the center of the package underside.
Electrical Specifications VS ± 15V, VCM = 0, VO = 0V, TA = +25°C, unless otherwise noted. Boldface limits apply across the operating
temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50 - 300rad(Si)/s; or across a total
ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN MAX
(Note 7) TYP (Note 7) UNIT
Input Offset Voltage
VOS
10 85 µV
110 µV
Offset Voltage Drift
TCVOS
Established by characterization not
tested
0.1 1 µV/°C
Input Bias Current
IB
TA = -55°C to +125°C
Over high and low dose radiation
-2.5 0.08 2.5
-5 5
-15 15
nA
nA
nA
Input Bias Current Temperature
Coefficient
TCIB Established by characterization not
tested
-5 1
5 pA/°C
Input Offset Current
IOS
TA = -55°C to +125°C
Over high and low dose radiation
-2.5 0.08 2.5
-3 3
-10 10
nA
nA
nA
Input Offset Current Temperature
Coefficient
TCIOS
Established by characterization not
tested
-3 0.42 3 pA/°C
Input Voltage Range
Common-Mode Rejection Ratio
VCM
CMRR
Established by CMRR test
VCM = -13V to +13V
-13
120 145
120
13
V
dB
dB
Power Supply Rejection Ratio
PSRR
VS = ±2.25V to ±20V
120 145
120
dB
dB
Open-Loop Gain
Output Voltage High
AVOL
VOH
VO = -13V to +13V, RL = 10kΩ to ground
RL = 10kΩ to ground
3,000
13.5
13.2
14,000
13.7
V/mV
V
V
RL = 2kΩ to ground
13.3
13.0
13.55
V
V
FN8653 Rev.2.00
Oct 15, 2018
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ISL70419SEH
Electrical Specifications VS ± 15V, VCM = 0, VO = 0V, TA = +25°C, unless otherwise noted. Boldface limits apply across the operating
temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50 - 300rad(Si)/s; or across a total
ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN MAX
(Note 7) TYP (Note 7) UNIT
Output Voltage Low
VOL RL = 10kΩ to ground
-13.7
-13.5
-13.2
V
V
RL = 2kΩ to ground
-13.55
-13.3
-13.0
V
V
Supply Current/Amplifier
IS
0.44
0.625
0.75
mA
mA
Short-Circuit Current
Supply Voltage Range
AC SPECIFICATIONS
ISC
VSUPPLY
Established by PSRR
± 2.25
43
± 20
mA
V
Gain Bandwidth Product
Voltage Noise VP-P
Voltage Noise Density
Voltage Noise Density
Voltage Noise Density
Voltage Noise Density
Current Noise Density
GBWP
enVp-p
en
en
en
en
in
AV = 1k, RL = 2kΩ
0.1Hz to 10Hz
f = 10Hz
f = 100Hz
f = 1kHz
f = 10kHz
f = 1kHz
1.5
0.25
10
8.2
8
8
0.1
MHz
µVP-P
nV/Hz
nV/Hz
nV/Hz
nV/Hz
pA/Hz
Total Harmonic Distortion
TRANSIENT RESPONSE
THD + N
1kHz, G = 1, VO = 3.5VRMS, RL = 2kΩ
1kHz, G = 1, VO = 3.5VRMS, RL = 10kΩ
0.0009
0.0005
%
%
Slew Rate, VOUT 20% to 80%
SR AV = 11, RL = 2kΩVO = 4VP-P
0.3 0.5
0.2
V/µs
V/µs
Rise Time
10% to 90% of VOUT
tr, tf,
small signal
AV = 1, VOUT = 50mVP-P,
RL = 10kΩto VCM
130 450
625
ns
ns
Fall Time
90% to 10% of VOUT
AV = 1, VOUT = 50mVP-P, RL = 10kΩto VCM
130 600
700
ns
ns
Settling Time to 0.1%
10V Step; 10% to VOUT
Settling Time to 0.01%
10V Step; 10% to VOUT
Settling Time to 0.1%
4V Step; 10% to VOUT
Settling Time to 0.01%
4V Step; 10% to VOUT
Output Positive Overload Recovery Time
Output Negative Overload Recovery Time
Positive Overshoot
ts AV = -1, VOUT = 10VP-P, RL = 5kΩto VCM
AV = -1, VOUT = 10VP-P, RL = 5kΩto VCM
AV = -1, VOUT = 4VP-P, RL = 5kΩto VCM
AV = -1, VOUT = 4VP-P, RL = 5kΩto VCM
tOL AV = -100, VIN = 0.2VP-P, RL = 2kΩto VCM
AV = -100, VIN = 0.2VP-P, RL = 2kΩto VCM
OS+ AV = 1, VOUT = 10VP-P, Rf = 0Ω
RL = 2kΩto VCM
21
24
13
18
5.6
10.6
15
33
µs
µs
µs
µs
µs
µs
%
%
Negative Overshoot
OS- AV = 1, VOUT = 10VP-P, Rf = 0Ω
RL = 2kΩto VCM
15
33
%
%
FN8653 Rev.2.00
Oct 15, 2018
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