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HGTG20N100D2
May 1995
20A, 1000V N-Channel IGBT
Features
Package
• 34A, 1000V
• Latch Free Operation
• Typical Fall Time 520ns
• High Input Impedance
• Low Conduction Loss
Description
The HGTG20N100D2 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOS-
FET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately
between +25oC and +150oC.
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are essen-
tial, such as: AC and DC motor controls, power supplies and
drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY
PART NUMBER
HGTG20N100D2
PACKAGE
TO-247
BRAND
G20N100D2
JEDEC STYLE TO-247
EMITTER
COLLECTOR
(BOTTOM SIDE
METAL)
COLLECTOR
GATE
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector-Gate Voltage RGE = 1M. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(0.125 inch from case for 5 seconds)
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PEAK) = 600V, TC = +125oC, RGE = 25.
HGTG20N100D2
1000
1000
34
20
100
±20
±30
100A at 0.8 BVCES
150
1.20
-55 to +150
260
3
15
UNITS
V
V
A
A
A
V
V
-
W
W/oC
oC
oC
µs
µs
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
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File Number 2826.3

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Specifications HGTG20N100D2
Electrical Specifications TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Voltage
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
BVCES
IC = 250mA, VGE = 0V
1000
-
-
V
ICES
VCE = BVCES
TC = +25oC
-
- 250 µA
VCE = 0.8 BVCES TC = +125oC
-
- 1.0 mA
VCE(SAT)
IC = IC90,
VGE = 15V
TC = +25oC
TC = +125oC
-
-
3.1 3.8
2.9 3.6
V
V
IC = IC90,
VGE = 10V
TC = +25oC
TC = +125oC
-
-
3.3 4.1
3.2 4.0
V
V
VGE(TH)
IC = 500µA,
VCE = VGE
TC = +25oC
3.0 4.5 6.0
V
Gate-Emitter Leakage Current
IGES
VGE = ±20V
-
-
±250
nA
Gate-Emitter Plateau Voltage
VGEP
IC = IC90, VCE = 0.5 BVCES
- 7.1 -
V
On-State Gate Charge
QG(ON)
IC = IC90,
VCE = 0.5 BVCES
VGE = 15V
VGE = 20V
-
120 160
nC
-
163 212
nC
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
tD(ON)I
tRI
tD(OFF)I
L = 50µH, IC = IC90, RG = 25,
VGE = 15V, TJ = +125oC,
VCE = 0.8 BVCES
- 100 -
ns
- 150 -
ns
-
500 650
ns
Current Fall Time
tFI
-
520 680
ns
Turn-Off Energy (Note 1)
WOFF
- 3.7 - mJ
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off
tD(ON)I
tRI
tD(OFF)I
L = 50µH, IC = IC90, RG = 25,
VGE = 10V, TJ = +125oC,
VCE = 0.8 BVCES
- 100 -
ns
- 150 -
ns
-
410 530
ns
Current Fall Time
tFI
-
520 680
ns
Turn-Off Energy (Note 1)
Thermal Resistance
WOFF
RθJC
- 3.7 - mJ
- 0.7 0.83 oC/W
NOTE: 1. Turn-Off Energy Loss (WOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A) The HGTG20N100D2 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
40
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VCE = 10V
30
PULSE DURATION = 250µs
80 DUTY CYCLE < 0.5%, TC = +25oC
VGE = 15V
VGE = 8.5V
70
60 VGE = 8.0V
20 TC = +150oC
TC = +25oC
10
TC = -40oC
0
0 2 4 6 8 10
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL)
50
40 VGE = 7.5V
30
20 VGE = 6.0V
VGE = 7.0V
10
VGE = 6.5V
0
0 2 4 6 8 10
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
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HGTG20N100D2
Typical Performance Curves (Continued)
35
VGE = 15V
30
25
VGE = 10V
20
15
10
5
0
+25
+50
+75
+100
+125
+150
TC, CASE TEMPERATURE (oC)
FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE
6000
5000
f = 1MHz
4000
3000
2000
COSS
CISS
1000
CRSS
0
0
5
10 15
20 25
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE
5
TJ = +150oC
4
3
2
1
VGE = 10V
VGE = 15V
2.5
VCE = 800V, TJ = +150oC,
VGE = 15V, RG = 25, L = 50µH
2.0
1.5
1.0
0.5
0.0
1
10 40
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 4. FALL TIME vs COLLECTOR-EMITTER CURRENT
1000
750
VCC = BVCES
RL = 29
IG(REF) = 1.8mA
VGE = 10V
GATE-
EMITTER
VOLTAGE
VCC = BVCES
10
500 5
0.75 BVCES 0.75 BVCES
0.50 BVCES 0.50 BVCES
250 0.25 BVCES 0.25 BVCES
COLLECTOR-EMITTER VOLTAGE
0
IG(REF)
20
IG(ACT)
TIME (µs)
IG(REF)
80
IG(ACT)
0
FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CON-
STANT GATE CURRENT (REFER TO APPLICATION
NOTES AN7254 AND AN7260)
10
TJ = +150oC, VGE = 15V,
RG = 25Ω, L = 50µH
VCE = 800V, VGE = 10V, 15V
1.0
VCE = 400V, VGE = 10V, 15V
0
1 10 40
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 7. SATURATION VOLTAGE vs COLLECTOR-EMITTER
CURRENT
0.1
1
10
ICE, COLLECTOR-EMITTER CURRENT (A)
40
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOR-
EMITTER CURRENT
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HGTG20N100D2
Typical Performance Curves (Continued)
1.2
VGE = 15V, RG = 50
1.0
VGE = 10V, RG = 50
0.8
VGE = 15V, RG = 25
0.6
VGE = 10V, RG = 25
0.4
TJ = +150oC
VCE = 800V
L = 50µH
0.2
0.0
1
10
ICE, COLLECTOR-EMITTER CURRENT (A)
40
FIGURE 9. TURN-OFF DELAY vs COLLECTOR-EMITTER
CURRENT
40
VGE = 10V
100
VCE = 400V
fMAX1 = 0.05/tD(OFF)I
fMAX2 = (PD - PC)/WOFF
PC = DUTY FACTOR = 50%
RθJC = 0.7oC/W
10 VCE = 800V
TJ = +150oC, TC = +75oC, VGE = 15V
RG = 25, L = 50µH
1
1 10 100
NOTE:
ICE, COLLECTOR-EMITTER CURRENT (A)
PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION
FIGURE 10. OPERATING FREQUENCY vs COLLECTOR-
EMITTER CURRENT AND VOLTAGE
TJ = +150oC
10
Test Circuit
TJ = +25oC
1
12
34
5
VCE(ON), SATURATION VOLTAGE (V)
FIGURE 11. COLLECTOR-EMITTER SATURATION VOLTAGE
L = 50µH
1/RG = 1/RGEN + 1/RGE
RGEN = 50
20V
0V
RGE = 50
VCC
800V
+
-
FIGURE 12. INDUCTIVE SWITCHING TEST CIRCUIT
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HGTG20N100D2
Operating Frequency Information
Operating frequency information for a typical device (Figure
10) is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (ICE) plots are possible using the information shown
for a typical unit in Figures 7, 8 and 9. The operating
frequency plot (Figure 10) of a typical device shows fMAX1 or
fMAX2 whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
fMAX1 is defined by fMAX1 = 0.05/tD(OFF)I. tD(OFF)I deadtime
(the denominator) has been arbitrarily held to 10% of the on-
state time for a 50% duty factor. Other definitions are possible.
tD(OFF)I is defined as the time between the 90% point of the
trailing edge of the input pulse and the point where the
collector current falls to 90% of its maximum value. Device
turn-off delay can establish an additional frequency limiting
condition for an application other than TJMAX. tD(OFF)I is
important when controlling output ripple under a lightly loaded
condition.
fMAX2 is defined by fMAX2 = (PD - PC)/WOFF. The allowable
dissipation (PD) is defined by PD = (TJMAX - TC)/RθJC. The sum
of device switching and conduction losses must not exceed PD.
A 50% duty factor was used (Figure 10) and the conduction
losses (PC) are approximated by PC = (VCE ICE)/2. WOFF is
defined as the integral of the instantaneous power loss starting
at the trailing edge of the input pulse and ending at the point
where the collector current equals zero (ICE = 0A).
The switching power loss (Figure 10) is defined as fMAX2
WOFF. Turn-on switching losses are not included because they
can be greatly influenced by external circuit conditions and com-
ponents.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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