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SSM70T03GH,J
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
R DS(ON)
ID
30V
9m
60A
Pb-free; RoHS-compliant TO-251 (IPAK)
and TO-252 (DPAK)
G
D
S
TO-251 (suffix J)
G DS
TO-252 (suffix H)
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
The SSM70T03 acheives fast switching performance
with low gate charge without a complex drive circuit. It is
suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM70T03GH is in a TO-252 package, which is
widely used for commercial and industrial surface-mount
applications.
The through-hole version, the SSM70T03GJ in TO-251,
is available for vertical mounting, where a small footprint
is required on the board, and/or an external heatsink is
to be attached.
These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
The devices have a maximum junction temperature rating
of 175°C for improved thermal margin and reliability.
Symbol
VDS
VGS
ID
IDM
PD
EAS
TSTG
TJ
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current, TC = 25°C
Pulsed drain current1
TC = 100°C
Total power dissipation, TC = 25°C
Linear derating factor
Single pulse avalanche energy3
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
RΘJC
RΘJA
Parameter
Maximum thermal resistance, junction-case
Maximum thermal resistance, junction-ambient
Value
30
±20
60
43
195
53
0.36
29
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/°C
mJ
°C
°C
Value
2.8
110
Units
°C/W
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the safe operating area.
2.Pulse width <300us, duty cycle <2%.
3.VDD=25V , L=100uH , RG=25, IAS=24A.
10/16/2005 Rev.3.1
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SSM70T03GH,J
ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified)
Symbol
BVDSS
BV DSS/T j
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-source breakdown voltage
VGS=0V, ID=250uA
Breakdown voltage temperature coefficient Reference to 25°C, ID=1mA
Static drain-source on-resistance
VGS=10V, ID=33A
Gate threshold voltage
Forward transconductance
Drain-source leakage current
Gate-source leakage current
Total gate charge2
Gate-source charge
Gate-drain ("Miller") charge
Turn-on delay time2
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
VGS=4.5V, ID=20A
VDS=VGS, ID=250uA
VDS=10V, ID=33A
VDS=30V, VGS=0V
VDS=24V ,VGS=0V, Tj=175°C
VGS= ±20V
ID=33A
VDS=20V
VGS=4.5V
VDS=15V
ID=33A
RG=3.3Ω , VGS=10V
RD=0.45
VGS=0V
VDS=25V
f=1.0MHz
Min. Typ. Max. Units
30 -
-V
- 0.032 - V/°C
- - 9 m
- - 18 m
1 - 3V
- 35 -
S
- - 1 uA
- - 250 uA
- - ±100 nA
- 16.5 - nC
- 5 - nC
- 10.3 - nC
- 8.2 - ns
- 105 - ns
- 21.4 - ns
- 8.5 - ns
- 1485 - pF
- 245 - pF
- 170 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward voltage2
Reverse-recovery time2
Reverse-recovery charge
Test Conditions
IS=60A, VGS=0V
IS=30A, VGS=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ. Max. Units
- 1.3 V
29 - ns
12 - nC
Notes:
1.Pulse width must be limited to avoid exceeding the safe operating area.
2.Pulse width <300us, duty cycle <2%.
3.VDD=25V , L=100uH , RG=25, IAS=24A.
10/16/2005 Rev.3.1
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200
T C =25 o C
150
100
10V
8.0V
6.0V
50 V GS =4.0V
0
0.0 1.5 3.0 4.5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
60
I D =33A
T C =25°C
40
20
120
T C =175 o C
90
SSM70T03GH,J
10V
8.0V
6.0V
60
30 V GS =4.0V
0
0.0 1.5 3.0 4.5
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2
I D =33A
V GS =10V
1.6
1.2
0.8
0
0 4 8 12 16
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
1000
0.4
-50 25 100 175
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
2.5
100
Tj=175 o C
10
Tj=25 o C
2
1.5
11
0.1
0 0.5 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
0.5
-50 25 100 175
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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12
I D =33A
9 V DS =16V
V DS =20V
V DS =24V
6
3
0
0 10 20 30
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1000
10us
100
100us
10
T C =25 o C
Single Pulse
1
0.1
1
1ms
10ms
100ms
DC
10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
SSM70T03GH,J
f=1.0MHz
10000
C iss
1000
C oss
C rss
100
1
8 15 22 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty Factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
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SSM70T03GH,J
PHYSICAL DIMENSIONS
E
b3
A
c2
AA
e
SEE VIEW B
WITH PLATING
b
BASE METAL
SECTION A-A
GAUGE PLANE
L
L1
VIEW B
PART MARKING
SEATING PLANE
S TO-252-3L
Y
M
B
MILLIMETERS
O
L
MIN.
MAX.
A 1.80
2.80
A1 0.00
b 0.40
0.13
1.00
b3 4.80
c 0.35
5.90
0.65
c2 0.40
D 5.10
0.89
6.30
E 6.00
7.00
e 2.30 BSC
H 7.80
11.05
L 1.00
2.55
L1 2.20
3.05
L2 0.35
0.65
L3 0.50
L4 0.50
2.03
1.20
θ
*Dimensions do not include mold protrusions.
PART NUMBER: 70T03GH or 70T03GJ
XXXXXX
YWWSSS
DATE/LOT CODE: (YWWSSS)
Y = last digit of the year
WW = week
SSS = lot code sequence
PACKING: Moisture sensitivity level MSL3
TO-252: 3000 pcs in antistatic tape on a reel packed inside a moisture barrier bag (MBB).
TO-251: 1000pcs in an antistatic bag packed inside a moisture barrier bag (MBB).
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
10/16/2005 Rev.3.1
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