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UNISONIC TECHNOLOGIES CO., LTD
2SB1132
PNP SILICON TRANSISTOR
MEDIUM POWER TRANSISTOR
1
DESCRIPTION
The UTC 2SB1132 is a epitaxial planar type PNP silicon
transistor.
FEATURES
* Low VCE(SAT).
VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)
SOT-89
1
TO-252
*Pb-free plating product number: 2SB1132L
ORDERING INFORMATION
Order Number
Package
Normal
Lead Free Plating
www.DataSheet4U.com
2SB1132-x-AB3-R
2SB1132L-x-AB3-R
SOT-89
2SB1132-x-TN3-R
2SB1132L-x-TN3-R
TO-252
2SB1132-x-TN3-T
2SB1132L-x-TN3-T
TO-252
Pin Assignment
1 23
B CE
B CE
B CE
Packing
Tape Reel
Tape Reel
Tube
2SB1132L-x-AB3-R
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(1) R: Tape Reel, T: Tube
(2) AB3: SOT-89, TN3: TO-252
(3) x: refer to Classification of hFE
(4) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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2SB1132
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-32
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
Collector Current Single pulse, Pw=100ms
DC
PULSE
IC
-1 A
-2 A
Collector Power Dissipation
SOT-89
TO-252
PC
0.5 W
1W
Junction Temperature
Storage Temperature
TJ
TSTG
150
-55 ~ +150
°C
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Note: Measured using pulse current.
SYMBOL
TEST CONDITIONS
BVCBO IC = -50µA
BVCEO IC = -1mA
BVEBO IE= -50µA
ICBO VCB= -20V
IEBO VEB= -4V
VCE(SAT) IC = -500mA,IB= -50mA (Note)
hFE VCE= -3V,IC = -0.1A (Note)
fT VCE= -5V, IE= 50 mA, f=30MHz
Cob VCB= -10V, IE= 0A,f=1MHz
CLASSIFICATION OF hFE
RANK
RANGE
P
82-180
Q
120-270
MIN TYP MAX UNIT
-40 V
-32 V
-5 V
-0.5 µA
-0.5 µA
-0.2 -0.5 V
82 390
150 MHz
20 30 pF
R
180-390
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SB1132
TYPICAL CHARACTERISTICS
-500
-200
-100
-50
Grounded Emitter Propagation
Characteristics
VCE =-6V
Ta=100
Ta=25
-20 Ta= -55
-10
-5
-2
-1
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4-1.6
Base to Emitter Voltage, VBE(V)
DC Current Gain vs. Collector Current( )
1000
Ta=25
500
VcE= -3V
200
VcE= -1V
100
50
-1 -2
-5 -10 -20 -50-100-200-500-1000
Collector Current, Ic(mA)
Collector-emitter Saturation Voltage vs.
-1
Ta=25
Collector Current
-0.5 IC/IB=10
-0.2
-0.1
-0.05
-0.02
-0.01
-1 -2 -5 -10-20 -50-100-200-500-1000-2000
Collector Current, Ic(mA)
PNP SILICON TRANSISTOR
-500
-3.0
-3.5
-400
Grounded Emitter Output
Characteristics
-4.0 -2.5
-4.5
-2.0
-300
-5.0
-1.5
-200
-1.0
-100
-0.5
0 Ta=25 IB =0mA
0 -0.4 -0.8 -1.2 -1.6 -2.0
Collector to Emitter Voltage, VCE(V)
DC Current Gain vs.Collector Current ( )
1000
VcE= -3V
500
Ta=100
200
Ta=25
100
50
-1 -2
Ta= -55
-5 -10 -20 -50-100-200-500-1000
Collector Current :Ic(mA)
Collector Emitter Saturation Voltage vs.
Base Current
-1.0
Ta=25
-0.8
-0.6
-0.4 IC = -500mA
-0.2
0
-1
IC = -300mA
-2 -5 -10 -20 -50 -100
Base Current, IB(mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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