F10U20DN.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 F10U20DN 데이타시트 다운로드

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Features
• Ultrafast with soft recovery
• Low forward voltage
Applications
• Power switching circuits
• Output rectifiers
• Freewheeling diodes
• Switching mode power supply
FFAF10U20DN
123
TTOO--232P0FF
1. Anode 2.Cathode 3. Anode
ULTRA FAST RECOVERY POWER RECTIFIER
Absolute Maximum Ratings (per diode) TC=25°C unless otherwise noted
Symbol
Parameter
Value
VRRM
IF(AV)
IFSM
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
@ TC = 100°C
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
200
10
100
TJ, TSTG
Operating Junction and Storage Temperature
- 65 to +150
Thermal Characteristics
Symbol
RθJC
Parameter
Maximum Thermal Resistance, Junction to Case
Value
4.0
Electrical Characteristics (per diode) TC=25 °C unless otherwise noted
Symbol
Parameter
Min. Typ.
VFM *
IRM *
Maximum Instantaneous Forward Voltage
IF = 10A
IF = 10A
Maximum Instantaneous Reverse Current
@ rated VR
trr Maximum Reverse Recovery Time
Irr Maximum Reverse Recovery Current
Qrr Maximum Reverse Recovery Charge
(IF =10A, di/dt = 200A/µs)
WAVL
Avalanche Energy
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
TC = 25 °C
TC = 100 °C
TC = 25 °C
TC = 100 °C
-
-
-
-
-
-
-
0.5
-
-
-
-
-
-
-
-
Max.
1.2
1.0
10
100
35
2.5
45
-
Units
V
A
A
°C
Units
°C/W
Units
V
µA
ns
A
nC
mJ
©2001 Fairchild Semiconductor Corporation
Rev. A, December 2001

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Typical Characteristics
50
10
T = 100oC
C
T = 25oC
C
1
0.1
0.0
0.5 1.0 1.5
Forward Voltage , VF [V]
2.0
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
400
Typical Capacitance
at 0V = 286 pF
300
200
100
0.1 1 10 100
Reverse Voltage , VR [V]
Figure 3. Typical Junction Capacitance
6
IF = 10A
5
T = 25oC
C
4
3
2
1
0
100 500
di/dt [A/µs]
Figure 5. Typical Reverse Recovery Current
vs. di/dt
©2001 Fairchild Semiconductor Corporation
1000
100
TC = 100oC
10
1
T = 25oC
C
0.1
0.01
0.001
0
50 100 150
Reverse Voltage , V [V]
R
Figure 2. Typical Reverse Current
vs. Reverse Voltage
200
40
IF = 10A
Tc = 25oC
35
30
25
20
100
di/dt [A/µs]
500
Figure 4. Typical Reverse Recovery Time
vs. di/dt
16
14
12
10
8
6
4
2
0
60 80 100 120 140 160
Case Temperature , TC [oC]
Figure 6. Forward Current Derating Curve
Rev. A, December 2001

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Package Dimensions
TO-3PF
15.50 ±0.20
ø3.60 ±0.20
5.50 ±0.20
3.00 ±0.20
(1.50)
0.85 ±0.03
2.00 ±0.20
2.00 ±0.20
4.00 ±0.20
0.75
+0.20
–0.10
5.45TYP
[5.45 ±0.30]
2.00 ±0.20
5.45TYP
[5.45 ±0.30]
2.00 ±0.20
3.30 ±0.20
0.90
+0.20
–0.10
©2001 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A, December 2001

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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
Preliminary
First Production
No Identification Needed
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H4