AP60N03GS-HF-3.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 AP60N03GS-HF-3 데이타시트 다운로드

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Advanced Power
Electronics Corp.
AP60N03GP/S-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
Low On-resistance
D
Fast Switching Performance
RoHS-compliant, halogen-free
G
S
BV DSS
RDS(ON)
ID
30V
13.5m
55A
Description
D (tab)
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP60N03GS-HF-3 is in the TO-263 package, which is widely used
for commercial and industrial surface-mount applications, and is well
suited for low voltage applications such as DC/DC converters.
G
DS
The AP60N03GP-HF-3 is in the TO-220 through-hole package which is
used where a low PCB footprint or an attached heatsink is required.
Absolute Maximum Ratings
G
DS
TO-263 (S)
D (tab)
TO-220 (P)
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Rating
30
±20
55
35
215
62.5
0.5
-55 to 150
-55 to 150
Value
2.0
62
Units
V
V
A
A
A
W
W/°C
°C
°C
Units
°C/W
°C/W
Ordering Information
AP60N03GS-HF-3TR : in RoHS-compliant halogen-free TO-263, shipped on tape and reel (800 pcs/reel)
AP60N03GP-HF-3TB : in RoHS-compliant halogen-free TO-220, shipped in tubes (50pcs/tube)
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
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Electronics Corp.
AP60N03GP/S-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol
BVDSS
BV DSS/ Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Forward Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=10V, ID=28A
VGS=4.5V, ID=22A
VDS=VGS, ID=250uA
VDS=10V, ID=28A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS=±20V
ID=28A
VDS=24V
VGS=5V
VDS=15V
ID=28A
RG=3.3Ω , VGS=10V
RD=0.53
VGS=0V
VDS=25V
f=1.0MHz
Min. Typ. Max. Units
30 - - V
- 0.037 - V/°C
- 11.5 13.5 m
- 18 20 m
1 - 3V
- 30 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 22.4 - nC
- 2.7 - nC
- 14 - nC
- 7.4 - ns
- 81 - ns
- 24 - ns
- 1 8 - ns
- 950 - pF
- 440 - pF
- 145 - pF
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )1
Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.3V
Tj=25°C, IS=55A, VGS=0V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us, duty cycle <2%.
Min. Typ. Max. Units
- - 55 A
- - 215 A
- - 1.3 V
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
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Typical Electrical Characteristics
200
T C =25 o C
150
10V
8.0V
6.0V
100
50
V G =4.0V
0
02468
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20
18 I D = 28 A
T C =25 o C
16
14
12
10
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
100
10
T j =150 o C
1
T j =25 o C
0.1
0.01
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
AP60N03GP/S-HF-3
150
T C =150 o C
100
10V
8.0V
6.0V
50
V G =4.0V
0
0246
V DS , Drain-to-Source Voltage (V)
8
Fig 2. Typical Output Characteristics
1.6
I D =28A
1.4
V G =10V
1.2
1
0.8
0.6
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
150
3
2
1
0
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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Typical Electrical Characteristics (cont.)
14
I D = 28 A
12
10000
10
V DS =16V
8 V DS =20V
V DS =24V
6
1000
4
2
0
0 5 10 15 20 25 30 35 40
Q G , Total Gate Charge (nC)
100
1
AP60N03GP/S-HF-3
f=1.0MHz
C iss
C oss
C rss
5 9 13 17 21 25
V DS , Drain-to-Source Voltage (V)
29
Fig 7. Gate Charge Characteristics
1000
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
100
10us
100us
10
T c =25 o C
Single Pulse
1ms
10ms
100ms
1
1 10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
10V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Fig 12. Gate Charge Waveform
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Package Dimensions: TO-220
E
E1
φ
L1 L5
A
D1
D
L4
1 23
b1
L
AP60N03GP/S-HF-3
SYMBOLS
Millimeters
MIN NOM MAX
A 4.40 4.60 4.80
b 0.76 0.88 1.00
c1 D 8.60 8.80 9.00
c 0.36 0.43 0.50
E 9.80 10.10 10.40
L4 14.70 15.00 15.30
L5 6.20 6.40 6.60
D1 5.10 REF.
c1 1.25 1.35 1.45
b1 1.17 1.32 1.47
L 13.25 13.75 14.25
e 2.54 REF.
L1 2.60 2.75 2.89
φ 3.71 3.84 3.96
E1 7.4 REF,
b
e
c
1. All dimensions are in millimeters.
2. Dimensions do not include mold protrusions.
Marking Information: TO-220
60N03GP
Product: AP60N03
Package code
GP = RoHS-compliant halogen-free TO-220
YWWSSS
Date/lot code (YWWSSS)
Y: Last digit of the year
WW: Work week
SSS: Lot code sequence
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
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