IXYH20N120C3.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 IXYH20N120C3 데이타시트 다운로드

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1200V XPTTM
GenX3TM IGBTs
High-Speed IGBT
for 20-50 kHz Switching
IXYA20N120C3HV
IXYP20N120C3
IXYH20N120C3
Symbol
VCES
VCGR
VGES
VGEM
IC25
IICCM110
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
MFCd
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
1200
1200
±20
±30
V
V
V
V
TC = 25°C
TTCC
= 110°C
= 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 10
Clamped Inductive Load
TC = 25°C
40
20
96
10
400
ICM = 40
@VCE VCES
278
-55 ... +175
175
-55 ... +175
A
A
A
A
mJ
A
W
°C
°C
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300 °C
260 °C
Mounting Torque (TO-220 & TO247)
Mounting Force (TO-263)
1.13/10
10..65 / 22..14.6
Nm/lb.in.
N/lb
TO-263
TO-220
TO-247
2.5 g
3.0 g
6.0 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC = 20A, VGE = 15V, Note 1
TJ = 150C
Characteristic Values
Min. Typ. Max.
1200
V
3.0 5.0 V
15 A
500 μA
100 nA
3.4 V
4.0 V
VCES = 1200V
IC110 = 20A
VCE(sat)  3.4V
tfi(typ) = 108ns
TO-263HV (IXYA)
G
E
C (Tab)
TO-220 (IXYP)
GC E
Tab
TO-247 AD (IXYH)
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
High Voltage Package
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
Avalanche Rated
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100484B(02/13)

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Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 20A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 20A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 20A, VGE = 15V
VCE = 0.5 • VCES, RG = 10
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 150°C
IC = 20A, VGE = 15V
VCE = 0.5 • VCES, RG = 10
Note 2
RthJC
RthCS
RthCS
TO-220
TO-247
IXYA20N120C3HV IXYP20N120C3
IXYH20N120C3
Characteristic Values
Min.
Typ. Max.
TO-220 Outline
7.0 11.5
S
1110
70
27
pF
pF
pF
53 nC
9 nC
22 nC
20 ns
29 ns
1.3 mJ
90 ns
108 ns
0.5 1.0 mJ
Pins: 1 - Gate
3 - Emitter
2 - Collector
20 ns
40 ns
3.7 mJ
115 ns
105 ns
0.7 mJ
0.54 °C/W
0.50 °C/W
0.21 °C/W
TO-247 Outline
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
123
P
TO-263HV Outline
PIN: 1 - Gate
2 - Emitter
3 - Collector
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
e
Terminals: 1 - Gate
3 - Emitter
2 - Collector
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
bb12
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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Fig. 1. Output Characteristics @ TJ = 25ºC
40
VGE = 15V
35 13V
11V
10V
30 9V
25
8V
20
15
10 7V
5
6V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
VCE - Volts
40
35
30
25
20
15
10
5
0
0
Fig. 3. Output Characteristics @ TJ = 150ºC
VGE = 15V
13V
11V
10V
9V
8V
7V
6V
5V
12345678
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
11
TJ = 25ºC
9
7
I C = 40A
5
20A
3
10A
1
6 7 8 9 10 11 12 13 14 15
VGE - Volts
IXYA20N120C3HV IXYP20N120C3
IXYH20N120C3
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
100
VGE = 15V
80
13V
12V
60 11V
10V
40
9V
20
0
0
8V
7V
6V
5 10 15 20 25 30
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
2.4
VGE = 15V
2.0
I C = 40A
1.6
I C = 20A
1.2
0.8 I C = 10A
0.4
-50
-25
0
25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Input Admittance
50
45
TJ = - 40ºC
25ºC
40 150ºC
35
30
25
20
15
10
5
0
3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5
VGE - Volts
© 2013 IXYS CORPORATION, All Rights Reserved

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16
14
12
10
8
6
4
2
0
0
Fig. 7. Transconductance
TJ = - 40ºC
25ºC
150ºC
5 10 15 20 25 30 35 40 45 50
IC - Amperes
10,000
f = 1 MHz
Fig. 9. Capacitance
IXYA20N120C3HV IXYP20N120C3
IXYH20N120C3
16
14 VCE = 600V
IC = 20A
12 IG = 10mA
Fig. 8. Gate Charge
10
8
6
4
2
0
0 5 10 15 20 25 30 35 40 45 50 55
QG - NanoCoulombs
Fig. 10. Reverse-Bias Safe Operating Area
40
1,000
100
10
0
1
Cies
30
Coes
Cres
5 10 15 20 25 30 35 40
VCE - Volts
20
10
0
200
TJ = 150ºC
RG = 10
dv / dt < 10V / ns
400
600 800
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1000
1200
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

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Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
2
Eoff Eon - - - -
1.6 TJ = 150ºC , VGE = 15V
VCE = 600V
1.2 I C = 40A
0.8
I C = 20A
0.4
20
16
12
8
4
0
10 15 20 25 30 35 40 45 50
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
1.4
Eoff Eon - - - -
1.2 RG = 10, VGE = 15V
VCE = 600V
1.0
I C = 40A
0.8
0
55
12
10
8
6
0.6 4
IC = 20A
0.4 2
0.2
25
50 75 100 125
TJ - Degrees Centigrade
0
150
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
140 130
t f i td(off) - - - -
120
RG = 10, VGE = 15V
120
VCE = 600V
100 TJ = 150ºC
110
80
60 TJ = 25ºC
100
90
40 80
20 70
20 22 24 26 28 30 32 34 36 38 40
IC - Amperes
IXYA20N120C3HV IXYP20N120C3
IXYH20N120C3
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
1.4
Eoff Eon - - - -
1.2 RG = 10, VGE = 15V
VCE = 600V
1.0
TJ = 150ºC
0.8
12
10
8
6
0.6 4
TJ = 25ºC
0.4 2
0.2 0
20 22 24 26 28 30 32 34 36 38 40
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
180 360
160 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
140 VCE = 600V
320
280
120 240
100
I C = 20A
80
60
I C = 40A
200
160
120
40 80
20 40
10 15 20 25 30 35 40 45 50 55
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
160 140
140 t f i
td(off) - - - -
RG = 10, VGE = 15V
120 VCE = 600V
100
I C = 20A
130
120
110
80 100
60 90
I C = 40A
40 80
20
25
50 75 100 125
TJ - Degrees Centigrade
70
150
© 2013 IXYS CORPORATION, All Rights Reserved