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Elektronische Bauelemente
SSPS924NE
9.2A , 20V , RDS(ON) 12 m
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide
low RDS(on) and to ensure minimal power loss and
heat dissipation.
FEATURES
Low RDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
DFN3x3-8PP saves board space
Fast switching speed
High performance trench technology
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
DFN3x3-8PP
3K
Leader Size
13 inch
Top View
DFN3x3-8PP
B
D
C
θ
eE
A
db
g
F
G
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
0.70 0.90
3.00BSC
0.10 0.25
1.80 2.3
3.2BSC
0.01 0.02
2.35BSC
REF.
θ
b
d
e
g
Millimeter
Min. Max.
0° 12°
0.20 0.40
0.65BSC
3.00BSC
0.70(TYP.)
MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 1
TA=25°C
TA=70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
ID
IDM
IS
Total Power Dissipation 1
TA=25°C
TA=70°C
PD
Operating Junction & Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-Ambient 1
t 10sec
Steady State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
RθJA
http://www.SeCoSGmbH.com/
06-Mar-2012 Rev. A
Ratings
20
±8
9.2
7.5
50
2.6
1.5
1
-55~150
83
120
Unit
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
Any changes of specification will not be informed individually.
Page 1 of 4

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Elektronische Bauelemente
SSPS924NE
9.2A , 20V , RDS(ON) 12 m
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Static
Gate-Threshold Voltage
VGS(th)
1
-
-V
Gate-Body Leakage Current
IGSS - - ±10 µA
- -1
Zero Gate Voltage Drain Current
IDSS
µA
- - 25
On-State Drain Current 1
ID(on) 25 - - A
Drain-Source On-Resistance 1
Forward Transconductance 1
RDS(ON)
gfs
-
-
-
- 12
m
- 14
40 -
S
Diode Forward Voltage
VSD
- 0.7 -
V
Dynamic 2
Total Gate Charge
Qg - 17 -
Gate-Source Charge
Qgs - 4.4 - nC
Gate-Drain Charge
Qgd - 3.9 -
Input Capacitance
Ciss - 1663 -
Output Capacitance
Coss
- 145 -
pF
Reverse Transfer Capacitance
Crss - 139 -
Turn-On Delay Time
Td(on)
- 16 -
Rise Time
Turn-Off Delay Time
Tr
Td(off)
- 14 -
nS
- 75 -
Fall Time
Tf -
Notes:
1. Pulse testPW300µs duty cycle2%.
2. Guaranteed by design, not subject to production testing.
17
-
Teat Conditions
VDS=VGS, ID=250µA
VDS=0, VGS=±8V
VDS=16V, VGS=0
VDS=16V, VGS=0, TJ=55°C
VDS=5V, VGS=4.5V
VGS=4.5V, ID=7.4A
VGS=2.5V, ID=6.8A
VDS=10V, ID=7.4A
IS=1.3A, VGS=0
VDS=10V,
VGS=4.5V,
ID=7.4A
VDS=15V,
VGS=0
f=1MHz
VDS=10V
ID=7.4A
VGEN=4.5V
RL=1.4
RGEN=6
http://www.SeCoSGmbH.com/
06-Mar-2012 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4

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Elektronische Bauelemente
CHARACTERISTIC CURVE
SSPS924NE
9.2A , 20V , RDS(ON) 12 m
N-Ch Enhancement Mode Power MOSFET
http://www.SeCoSGmbH.com/
06-Mar-2012 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4