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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1399
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPN package
·Built-in damper diode
·High voltage ,high reliability
·High speed switching
APPLICATIONS
·For horizontal output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
ICM
PC
Tj
Emitter-base voltage
Collector current (DC)
Collector current-peak
Collector power dissipation
Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
800
7
6
16
50
150
-55~150
UNIT
V
V
V
A
A
W

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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1399
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector- emitter breakdown voltage IC=100mA; RBE=<
V(BR)CBO Collector-base breakdown voltage
IC=5mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=200mA; IC=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=1A
VBEsat
Base-emitter saturation voltage
IC=5A; IB=1A
ICBO Collector cut-off current
VCB=800V; IE=0
IEBO Emitter cut-off current
VEB=4V; IC=0
hFE DC current gain
IC=1A ; VCE=5V
fT Transition frequency
tf Fall time
VF Diode forward voltage
IC=1A ; VCE=10V
IC=5A;IB1=1A; IB2=-2A,
VCC=200V; RL=40C
IEC=6A
MIN TYP. MAX UNIT
800 V
1500
V
7V
5.0 V
1.5 V
10 µA
40 130 mA
8
3 MHz
0.7 µs
2.0 V
2

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SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
2SD1399
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3