D1170.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 D1170 데이타시트 다운로드

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INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1170
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·High DC Current Gain-
: hFE= 2000( Min.) @(IC= 3A, VCE= 2V)
·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ (IC= 3A, IB=B 3mA)
APPLICATIONS
·Driver for solenoid,motor and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
i.cnSYMBOL
PARAMETER
VALUE UNIT
.iscsemVCBO
Collector-Base Voltage
120 V
wwwVCEO Collector-Emitter Voltage
120 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
6A
ICM Collector Current-Peak
10 A
IB Base Current-Continuous
Collector Power Dissipation
PC @TC=25
TJ Junction Temperature
Tstg Storage Temperature
1A
50 W
150
-55~150
isc Websitewww.iscsemi.cn

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INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1170
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 120 V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 3mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB=B 3mA
ICBO Collector Cutoff Current
VCB= 120V; IE= 0
IEBO Emitter Cutoff Current
VEB= 6V; IC= 0
1.5 V
2.0 V
10 μA
10 μA
hFE DC Current Gain
i.cnCOB Output Capacitance
.iscsemfT Current-Gain—Bandwidth Product
Switching Times
wwwton Turn-on Time
IC= 3A; VCE= 2V
IE= 0; VCB= 10V; ftest= 1MHz
IE= -1A; VCE= 12V
2000
70
50
0.5
tstg Storage Time
VCC= 30V, RL= 10Ω,
IC= 3A; IB1= -IB2= 3mA,
5.5
tf Fall Time
1.5
pF
MHz
μs
μs
μs
isc Websitewww.iscsemi.cn
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