K1160.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 K1160 데이타시트 다운로드

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2SK1159, 2SK1160
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter and motor driver
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
G
123
REJ03G0911-0200
(Previous: ADE-208-1249)
Rev.2.00
Sep 07, 2005
D
1. Gate
2. Drain
(Flange)
3. Source
S
Rev.2.00 Sep 07, 2005 page 1 of 6

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2SK1159, 2SK1160
Absolute Maximum Ratings
Item
Drain to source voltage
2SK1159
2SK1160
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Electrical Characteristics
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Item
Drain to source breakdown 2SK1159
voltage
2SK1160
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain 2SK1159
current
2SK1160
Gate to source cutoff voltage
Static drain to source on 2SK1159
state resistance
2SK1160
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode forward voltage
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
450
500
±30
2.0
4.5
Note: 3. Pulse test
Typ
0.55
0.60
7.5
1150
340
55
17
55
100
45
0.9
350
Ratings
450
500
±30
8
32
8
60
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Max
±10
250
3.0
0.7
0.8
(Ta = 25°C)
Unit Test conditions
V ID = 10 mA, VGS = 0
V IG = ±100 µA, VDS = 0
µA VGS = ±25 V, VDS = 0
µA VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
V ID = 1 mA, VDS = 10 V
ID = 4 A, VGS = 10 V *3
S ID = 4 A, VDS = 10 V *3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 4 A, VGS = 10 V,
ns RL = 7.5
ns
ns
V IF = 8 A, VGS = 0
ns IF = 8 A, VGS = 0,
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6

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2SK1159, 2SK1160
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0 50 100 150 200
Case Temperature TC (°C)
Typical Output Characteristics
20
10 V
6V
Pulse Test
16
5.5 V
12
5.0 V
8
4.5 V
4
VGS = 4 V
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
10 A
6
4
5A
2
ID = 2 A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
50
20
10
5
2
1.0
0.5
0.2
0.1
0.05
1
DC
10
POWpe=ra1ti0onm1(sTmC(11s=0s20h5oµ°tCs))
µs
Ta = 25°C
2SK1160
2SK1159
3 10 30 100 300 1,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
20
–25°C
Ta = 25°C
16
VDS = 20 V
Pulse Test
75°C
12
8
4
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
10
5 Pulse Test
2
1.0
0.5
VGS = 10 V
15 V
0.2
0.1
0.5 1.0 2
5 10 20
Drain Current ID (A)
50