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FMH09N90E
Super FAP-E3 series
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
Maintains both low power loss and low noise
Lower RDS(on) characteristic
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (4.0±0.5V)
High avalanche durability
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Outline Drawings [mm]
TO-3P(Q)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum AvalancheCurrent
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Symbol
VDS
VDSX
ID
IDP
VGS
IAR
EAS
EAR
dV/dt
-di/dt
Maximum Power Dissipation
PD
Operating and Storage Temperature range
Tch
Tstg
Characteristics
900
900
±9
±36
±30
9
565.3
20.5
2.1
100
2.5
205
150
-55 to + 150
Unit
V
V
A
A
V
A
mJ
mJ
kV/µs
A/µs
W
°C
°C
Remarks
VGS = -30V
Note*1
Note*2
Note*3
Note*4
Note*5
Ta=25°C
Tc=25°C
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Drain Crossover Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
VGS (th)
IDSS
IGSS
RDS (on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
QSW
IAV
VSD
trr
Qrr
Conditions
ID=250µA, VGS=0V
ID=250µA, VDS=VGS
VDS=900V, VGS=0V
VDS=720V, VGS=0V
VGS=±30V, VDS=0V
ID=4.5A, VGS=10V
ID=4.5A, VDS=25V
VDS=25V
VGS = 0V
f=1MHz
Vcc = 60 0V
VGS=10V
ID=4.5A
RG=24Ω
Vcc = 450V
ID=9A
VGS=10V
L=5.12mH, Tch=25°C
IF=9A, VGS=0V, Tch=25°C
IF=9A, VGS=0V
-di/dt=100A/µs, Tch=25°C
Tch=25°C
Tch=125°C
min.
900
3.5
-
-
-
-
5.0
-
-
-
-
-
-
-
-
-
-
-
9
-
-
-
typ.
-
4.0
-
-
10
1.16
10
1700
150
11
35
30
110
30
50
15
16
6
-
0.90
1.8
15
Thermal Characteristics
Description
Thermal resistance
Symbol
Rth (ch-c)
Rth (ch-a)
Test Conditions
Channel to case
Channel to ambient
min.
typ.
Note *1 : Tch≤150°C
Note *2 : Stating Tch=25°C, IAS=3.6A, L=80.0mH, Vcc=90V, RG=10Ω
EAS limited by maximum channel temperature and avalanche current.
See to 'Avalanche current' graph.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph.
Note *4 : IF≤-ID, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.
Note *5 : IF≤-ID, dv/dt=2.1kV/µs, Vcc≤BVDSS, Tch≤150°C.
max.
-
4.5
25
250
100
1.4
-
2550
225
17
53
45
165
45
75
23
24
9
-
1.35
-
-
max.
0.610
50.0
Unit
V
V
µA
nA
S
pF
ns
nC
A
V
µS
µC
Unit
°C/W
°C/W
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FMH09N90E
Allowable Power Dissipation
PD=f(Tc)
240
200
160
120
80
40
0
0 25 50 75 100
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80 μs pulse test,Tch=25°C
15
125
150
10V
7.0V
6.5V
10
6.0V
5
VGS=5.5V
0
0 4 8 12 16 20
VDS [V]
Typical Transconductance
gfs=f(ID):80μs pulse test,VDS=25V,Tch=25°C
100
24
10
1
0.1
0.1
1
ID [A]
10
100
FUJI POWER MOSFET
Safe Operating Area
ID=f(VDS):Duty=0(Single pulse),Tc=25°C
102
101
100
t=
1μs
10μs
100μs
1ms
10-1
Power loss waveform :
Square waveform
PD
t
10-2
10-1
100 101
VDS [V]
102
Typical Transfer Characteristic
ID=f(VGS):80μs pulse test,VDS=25V,Tch=25°C
100
103
10
1
0.1
0123456789
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 μs pulse test,Tch=25°C
2.0
10
VGS=5.5V
1.8
6V
1.6 6.5V 7V
10V
20V
1.4
1.2
1.0
0.8
0
2
48
ID [A]
12

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FMH09N90E
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=4.5A,VGS=10V
5.0
4.5
4.0
3.5
3.0
2.5
2.0
max.
1.5
1.0 typ.
0.5
0.0
-50 -25 0
25 50 75 100 125 150
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=9A,Tch=25°C
14
12
Vcc= 120V
450V
720V
10
8
6
4
2
0
0 20 40 60 80 100
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 μs pulse test,Tch=25°C
100
10
1
0.1
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250μA
8
7
6
5 max.
typ.
4
min.
3
2
1
0
-50 -25 0
25 50 75
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
104
100 125 150
Ciss
103
102
Coss
101
Crss
100
10-2
10-1
100
VDS [V]
101
102
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=24Ω
103
tf
td(off)
102
td(on)
tr
101
0.01
0.00 0.25 0.50 0.75 1.00 1.25 1.50
VSD [V]
3
100
10-1
100
ID [A]
101
102

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FMH09N90E
FUJI POWER MOSFET
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=90V,I(AV)<=9A
600
IAS=3.6A
500
400 IAS=5.4A
300
IAS=9.0A
200
100
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
100
10-1
10-2
10-3
10-6 10-5 10-4 10-3 10-2 10-1 100
t [sec]
0
0 25 50 75 100 125 150
starting Tch [°C]
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FMH09N90E
FUJI POWER MOSFET
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device
Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or
warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor
products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products
become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
normal reliability requirements.
• Computers
• OA equipment
• Communications equipment (terminal devices)
• Machine tools
• Audiovisual equipment
• Electrical home appliances
• Personal equipment
• Measurement equipment
• Industrial robots etc.
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed
below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for
such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's
product incorporated in the equipment becomes faulty.
• Transportation equipment (mounted on cars and ships)
• Trunk communications equipment
• Traffic-signal control equipment
• Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
• Medical equipment
6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic
equipment (without limitation).
• Space equipment
• Aeronautic equipment
• Nuclear control equipment
• Submarine repeater equipment
7. Copyright ©1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device
Technology Co., Ltd.
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using the product.
Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in
accordance with instructions set forth herein.
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